XOAC Search Results

KL SN 102 94v

Abstract: wire T568 SCV64 The VMEbus Handbook, Fourth Ed VMEbus interface handbook Q002 ih 584 el designer manual kds 1555 SAA 1260 Ka 2535
Contextual Info: O p e n b u s In t e r fa c e C o m p o n e n t s SCV64 User Manual Issue 1 * / • bSflfllDl Q[ D24A0 134 ■ This Material Copyrighted By Its Respective Manufacturer T h e in fo rm a tio n in th is d o c u m e n t is su b je c t to c h a n g e w ith o u t n o tic e an d sh o u ld n o t be c o n stru ed as a

XE1209C012TRLF

Abstract: CPFSK receiver DS26 XE1209
Contextual Info: XE1209 Ultra Low Power CMOS Transceiver XE1209 30 – 70 kH Ultra Low Power CMOS Transceiver GENERAL DESCRIPTION The XE1209 is a CMOS Ultra Low-Power transceiver for short-range low frequency RF data communications system. It uses 2-level Continuous Phase FSK modulation. The receiver section

CPFSK receiver

Contextual Info: XE1209 Ultra Low Power CMOS Transceiver XE1209 30 – 70 kHz Ultra Low Power CMOS Transceiver KEY FEATURES GENERAL DESCRIPTION • • • • • • The XE1209 is a CMOS Ultra Low-Power transceiver for short-range low frequency RF data communications system. It uses 2-level Continuous

AB28F200B5B80

Abstract: AB28F400B5B80 E28F800B5T90 AB28F400B5 AB28F400B5B80 FLASH tb28f200b5 AB28F
Contextual Info: 5 VOLT BOOT BLOCK FLASH MEMORY 28F200B5, 28F004/400B5, 28F800B5 x8/x16 • SmartVoltage Technology — 5 Volt Boot Block Flash: 5 V Reads, 5 V or 12 V Writes — Increased Programming Throughput at 12 V Vpp ■ Very High-Performance Read — 2-, 4-Mbit: 55 ns Access Time

Princ

Contextual Info: ADVANCE INFORMATION 5 VOLT AUTOMOTIVE BOOT BLOCK FLASH MEMORY AB28F200BR, AB28F400BR x8/x16 • Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 5 V Read Operation ■ Very High Performance Read — 80 ns Max. Access Time, — 40 ns Max. Output Enable Time

tundra scv64

Contextual Info: Table of Contents 1 General Information. 1-1 1.1 Introduction. 1-1 1.2

28F800

Abstract: TE28F800CVB90 intel pa28f800
Contextual Info: SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 8-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 2 8 F 8 0 0 B V -T /B , 2 8 F 8 0 0 C V -T /B , 2 8 F 0 0 8 B V -T /B 2 8 F 8 0 0 C E -T /B , 2 8 F 0 0 8 B E -T /B • Intel Sm artVoltage Technology — 5 V or 12 V Program/Erase

d4516161

Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

Contextual Info: • DESCRIPTION The MB89640 series has been developed as a general-purpose version of the F2MC*-8L family consisting of proprietary 8-bit, single-chip microcontrollers. In addition to a compact instruction set, the microcontrollers contain a variety of peripheral functions such as

CA91C078

Abstract: xod8 Q00h SCV-64
Contextual Info: O p e n b u s In t e r fa c e C o m p o n e n t s SCV64 User Manual Issue 1 * / bSflfllDl 0 0 0 2 4 0 0 134 T he inform ation in this docum ent is subject to change w ithout notice and should not be construed as a com m itm ent by N ew bridge M icrosystem s. W hile reasonable precautions have been taken, Newbridge

la3246

Abstract: DIP24S LA3242 D1P24
Contextual Info: Ordering number: EN 2620C Monolithic Linear 1C LA3242 Is a H yoi Preamplifier for Compact Cassette Recorder Recording-only Use ,0i'' " X . X. Overview Package Dimensions % The LA3242 is a preamp 1C for compact cassette rccordcr rccording-only usc. The distinctive feature of the LA3242 is

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12505-3E 8-bit Proprietary Microcontroller lIM F2MC-8L MB89640 Series DESCRIPTION The MB89640 series has been developed as a general-purpose version of the F2MC*-8L family consisting of

29064

Abstract: AB28F X16SE
Contextual Info: ADVANCE INFORMATION 5 VOLT AUTOMOTIVE BOOT BLOCK FLASH MEMORY AB28F200BR, AB28F400BR, AB28F800BR x8/x16 • Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 5 V Read Operation ■ Very High Performance Read — 80 ns Max. Access Time, — 40 ns Max. Output Enable Time

A/M29F010B(45/70/90/MT352/CG/sigma asc 333

Contextual Info: L IÆ j W NEC Electronics Inc. HIPD424100, 4241OOA/L, 42S41OOA/L 4,194,304 x 1-Bit Dynamic CMOS RAM October 1992 Description Features The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.

MA 7815 tesla

Abstract: MAA501 MAA 436 TESLA MCA660 MAS560A MCA640 MA3005 MAA725 tesla maa 436 MA 7805 tesla
Contextual Info: l i 8 S W C L j D I W L M E L E K T R O N IC K É M K O N C E R N Ä H a n o r o B b i e S O U C Ä S T K Y R O Z N O V i/iHTerpa/ibHbie M M K pO C X eM bl A H a n o r o B b ie M H T e r p a n b H b ie M M KpO C XeM bl 1 L jM c fc p o B b ie M H T e r p a n b H b ie

Contextual Info: ADVANCE INFORMATION 5 VOLT AUTOMOTIVE BOOT BLOCK FLASH MEMORY AB28F200BR, AB28F400BR, AB28F800BR x8/x16 • Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 5 V Read Operation ■ Very High Performance Read — 80 ns Max. Access Time, — 40 ns Max. Output Enable Time

2T908A

Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Contextual Info: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12505-3E 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89640 Series MB89643/645/646/647/P647/PV640 • DESCRIPTION The MB89640 series has been developed as a general-purpose version of the F2MC*-8L family consisting of

tb28f200b5

Abstract: 28F400B5
Contextual Info: PRELIMINARY 5 VOLT BOOT BLOCK FLASH MEMORY 28F200B5, 28F004/400B5, 28F800B5 x8/x16 • SmartVoltage Technology — 5 Volt Boot Block Flash: 5 V Reads, 5 V or 12 V Writes — Increased Programming Throughput at 12 V V p p ■ Extended Block Erase Cycling

xoac

Contextual Info: ADVANCE INFORMATION All inform ation in this data sheet is prelim inary and su b je c t to change. jê jê j v i j ê j êI _ M obile-Radio A nalog C o n tro ller _ General Description _ Features T he M AX 1007 is a m u ltifu n c tio n a l in te g ra te d c irc u it

Capacitate

Abstract: DS26 XE1209 CPFSK receiver XOAC
Contextual Info: XE1209 Datasheet Cvdd 100nF Vdd wupen Level Peak Detector 270pF Sine Filter @2 fc LowPass Filter @ fc SUPTEST VDDA I 150k 68mH INB 47nF Vdd Limiter Demodulator VREF clk Anti-Alias Filter Sine Filter @2 fc Current Ref. LowPass Filter @ fc Q VSSA I Preampl +i

SM56V16800

Abstract: transistor 305 56V16800 active suspension BA RV 2H24D d0117
Contextual Info: OKI Semiconductor MSM56V16800 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The M SM 56V16800 is a 2-b an k x 1,048,576-w ord x 8-bit synchronous D ynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible.