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    XK581 Search Results

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    XK581 Price and Stock

    Sony Semiconductor

    Sony Semiconductor CXK581020J-45

    High Speed CMOS Static RAM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics CXK581020J-45 1,885
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    Sony Semiconductor CXK581020J-35

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    Bristol Electronics CXK581020J-35 764 1
    • 1 $9.69
    • 10 $6.30
    • 100 $4.55
    • 1000 $4.17
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    Sony Semiconductor CXK581000AP-70LL

    SRAM Chip Async Single 5V 1M-bit 128K x 8 70ns 32-Pin PDIP
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    Bristol Electronics CXK581000AP-70LL 438
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    Sony Semiconductor CXK581000AP-10LL

    SRAM Chip Async Single 5V 1M-bit 128K x 8 100ns 32-Pin PDIP
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    Bristol Electronics CXK581000AP-10LL 262
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    Sony Semiconductor CXK581000BM-70LL

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    Bristol Electronics CXK581000BM-70LL 132
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    XK581 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: C XK581000P/M -12LB SONY. 131072-word x 8-bit High Speed CMOS Static RAM D escription The XK581000P/M is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. Operating on a single 2.7 to 5.5V supply, this asynchronous IC is suitable for high speed and low


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    xk581000p/m-12lb131072-wordcxk581000p/m+6240ns120nscxk581ooop/mcxk581000p600milcxk581000m PDF

    104 k5k capacitor

    Abstract: motorola HEP 801 motorola HEP cross reference sony KHS - 313 Micropower Buffered Variable Voltage DS2251-64-12 motorola HEP 320 cross reference 80c154 intel k5k 104 capacitor 104 capacitor k5k
    Contextual Info: TABLE OF CONTENTS SOFT MICROCONTROLLER USER’S GUIDE Section 1 Introduction . 1 Section 2 Selection G u id e . 4


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    104 k5k capacitormotorola hep 801motorola hep cross referencesony khs - 313+6micropower buffered variable voltageds2251-64-12motorola hep 320 cross reference80c154 intelk5k 104 capacitor104 capacitor k5k PDF

    Contextual Info: S o n y . XK58110OTM/YM - 1 O°w i2o</i5u< L L X /1 2 L L X /1 5 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description XK581100TM 32 pin TSOP Plastic C X K 5 8 1 1OOTM/YM is a 1M bits, 131,072 words by 8 bits, C M O S static RAM. It is suitable for portable and


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    cxk58110otm131072-wordcxk581100tmcxk581100ym+4581100tm581100y581100txk581100tm PDF

    c00f

    Contextual Info: XK58110OTM/YM •12LB SONY« 131072-word x 8-bit High Speed CMOS Static RAM Description XK581100TM/YM is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. C X K 581100TM 32 pin TSO P Plastic C XK 58110OYM 32 pin TSO P (Plastic)


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    cxk58110otm/ym581100tm58110oym131072-word+5cxk581100tm/ymcxk581100tmcxk581100ymcxk581c00f PDF

    Contextual Info: XK581020SP/J -35/45/55 SONY 131072-word X 8-bit High Speed CMOS Static RAM Description C X K 5810 20S P /J are 131,072-word x 8 -bit high speed CMOS static RAMs suitable fo r use in high speed and low power applications. Organized as 131,072 words by 8 bits, it


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    cxk581020sp/j131072-word072-wordcxk581020sp+5581020sp/j-35cxk5810p/j-55xk581020sp/j-35 PDF

    Contextual Info: SONY. C X K 5 8 1 O O O P / •1OLX/12LX/15LX/ 10LLX/12LLX/15LLX M 131072-word X 8-bit High Speed CMOS Static RAM Description The C X K 5 8 1 0 0 0 P /M is a general purpose high speed CMOS sta tic RAM organized as 131072 w o rds by 8 bits. Operating on a single


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    olx/12lx/15lx/10llx/12llx/15llx131072-word100ns+5/12llx120nscxk581000p/mxk581000p581000m PDF

    Contextual Info: C XK SONY 131072-word X 581000P / M 1017121715L -1 0 L L /1 2 L U /1 5 L L 8-bit High Speed CMOS Static RAM Description XK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this


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    131072-word581000p1017121715lcxk581000p/m+6cxk581000pxk581000mcxk581000p/m-10l/1oll100nscxk581000p/m-12l/12ll120ns PDF

    Contextual Info: SONY XK581000P/M - 1 O L X /1 2 L X /1 5 L X / 1 0 L L X /1 2 L L X /1 5 L L X 131072-word x 8-bit High Speed CMOS Static RAM D escription The C X K 5 8 1 0 0 0 P /M is a general purpose high speed CMOS sta tic RAM organized as 131072 w ords by 8 bits. Operating on a single


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    cxk581000p/m131072-wordcxk581000pcxk581000m+3100nscxk581xk581000m PDF

    Contextual Info: SONY Ç X K 5 8 1 2 S P / J -35/45/55 131072-word x 8-bit High Speed CM O S Static RAM D escription XK581020SP 32 pin DIP Plastic C X K 5 8 1 0 2 0 S P /J are 1 3 1 ,0 7 2 -w o rd x 8 -b it high speed CMOS sta tic RAMs suitable fo r use in high speed and low power applications.


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    131072-wordcxk581020spcxk581020jcxk581020sp/j+4xk581020sp01p032-p-040q581020j PDF

    CXK5816M

    Abstract: MB8416A CXK5816PN HM6116
    Contextual Info: SOIMY XK5816PN/M 2K-word X 8 bit High Speed CMOS Static RAM Description The C X K 5 8 1 6 P N /M sta tic RAM orga n ized o perates fro m a sin g le su itab le fo r use in h igh in w h ic h b atte ry back Package O u tline is a 1 6 ,3 8 4 b its h igh speed CMOS


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    cxk5816pn/m100/xw125mw100ns/120ns/150ns+4cxk5816mmb8416acxk5816pnhm6116 PDF

    CXK581000M

    Abstract: CXK581000P 15L15LL
    Contextual Info: 54E D • &3B23&3 000475b TTT I SONY C X K 581000P/M SONY. -10L712U15L -10LLV12LU/15LL 131072-word X 8-bit High Speed CMOS Static RAM SONY C O R P / C O M P O N E N T PRODS Description XK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8


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    HM6116

    Abstract: MB8416A sony 2048-word x 8 Bit High Speed CMOS Static RAM CXK5816PN sony cxk5816pn CXK5816M
    Contextual Info: SONY XK5816PN/M 2 K-word X 8 bit High Speed CMOS Static RAM D escription P a ck a g e O utline Unit: mm T h e C X K 5 8 1 6 P N / M is a 1 6 ,3 8 4 bits high s p e e d C M O S sta tic RAM o rganized a s 2 ,0 4 8 w o rd s b y 8 bits and C X K 5816PN 2 4 pin D IP


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    cxk5816pn/m100/xw125mw100ns/120ns/150ns+6hm6116mb8416asony 2048-word x 8 bit high speed cmos static ramcxk5816pnsony cxk5816pncxk5816m PDF

    Contextual Info: Sony. CXK 58110O TM /YM IS Ö W 131072-word X 8-bit High Speed CMOS Static RAM D escription XK58110OTM/YM is a 1M bits, 131072 words by 8 bits, CMOS static RAM. It is suitable for portable and XK581100TM 32 pin TSOP Plastic XK581100YM 32 pin TSOP (Plastic)


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    58110ocxk581100tm131072-wordcxk58110otm/ym+5cxk581100ymcxk581100vmcxk581100tm/ym-10l-10llcxk5811lative PDF

    CXK581000M

    Abstract: CXK581000P
    Contextual Info: C X K 5 8 1 OOOP/M -12LB SONY. 131072-word x 8-bit High Speed CMOS Static RAM D e s c r ip tio n The XK581 OOOP/M is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. Operating on a single 2.7 to 5.5V supply, this asynchronous IC is suitable for high speed and low


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    cxk581ooop/m-12lb131072-wordcxk581+6240ns120nscxk581000pdip-32p-01d1p032-p-0600-acxk581000m PDF

    Contextual Info: SONY XK581OOOP/M -12LB 131072-word x 8-bit High Speed CMOS Static RAM Description The XK581 OOOP/M is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. Operating on a single 2.7 to 5.5V supply, this asynchronous IC is suitable for high speed and low


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    cxk581ooop/m-12lb131072-wordcxk581+5cxk581000pxk581000m240ns120nsk581000p/m PDF

    YM12L

    Contextual Info: sony . XK58110OTM/YM : ! S M W 131072-word x 8-bit High Speed CMOS Static RAM D e s c r ip tio n XK5811OOTM/YM is a 1M bits, 131072 words by 8 bits, CMOS static RAM. It is suitable for portable and battery back-up systems which require extremely small package and low stand-by current.


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    cxk58110otm/ym131072-wordcxk5811ootm/ymcxk581100tm+6cxk581100ymcxk581100tm/ym-10lcxk58110otmcxk581cxk58110oymym12l PDF

    A16Q2

    Contextual Info: sony . C X K 5 8 1 1 0 O T M /Y M 131072-word x 8-bit High Speed CMOS Static RAM D escription C X K 5 8 1 10OTM /YM is a 1M bits, 131072 words by 8 bits, C M O S static RAM . It Is suitable for portable and C XK 58110OTM 32 pin TS O P Plastic C X K 58110OYM


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    131072-word10otm58110otm58110oym+6xk581100tm581100ymcxk581tsqpo32-p-o02o-a10oyma16q2 PDF

    XTA11

    Abstract: icc3 icc1
    Contextual Info: Sony XK581OOOATM/AM -70LLI/10LLI 131,072-word x 8-bit High-Speed CMOS Static RAM Description The XK581 OOOATM/AM are high speed CM O S Static RAMs organized as 131,072-words-by-8-bits. A polysilicon TFT cell technology realizes extremely low stand-by current and higher data retention stability.


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    cxk581oooatm/am-70lli/10lli072-wordcxk581+7072-words-by-8-bitsxk581100nsk581000atm/amcxk581000amxta11icc3 icc1 PDF