000475B Search Results

CXK581000M

Abstract: CXK581000P 15L15LL
Contextual Info: 54E D • &3B23&3 000475b TTT I SONY C X K 581000P/M SONY. -10L712U15L -10LLV12LU/15LL 131072-word X 8-bit High Speed CMOS Static RAM SONY C O R P / C O M P O N E N T PRODS Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8

Contextual Info: EXAR CORP "il 3 4 EEb 10 000475b 0 T . T - V S - S i .TM XR-A100 Master-Chip1 Chip S iz e : 73 x 83 mils Total Components: 276 Bonding Pads: 16 Max. Operating Voltage: 20V NPN Transistors Small Signal: 58 High Current: 2 200 mA PN P Transistors: 18 Schottky Diodes: 15

Contextual Info: Full Duplex ¡SI 84C300A ^ 4-Port Fast Ethernet Controller HURBCANE Technology Incorporated _ September 1995 PR ELIM IN A R Y Features • Low Power CMOS Technology ■ The Following A ddltional Features can be Programmed for the 84C300A

0.25 WATT philips METAL film resistor

Abstract: MBA0204 A0204 0204c
Contextual Info: Philips Components Product Specification Metal Film Resistor .25 &.40 Watt .1%to 5% DESCRIPTION A homogeneous film of metal alloy is deposited on a high grade BALOX ceramic body. After a helical groove has been cut in the resistive layer; tin plated, copper leads

ESJA04-03A

Contextual Info: For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com •I 2 8 3 6 7 1 2 D D Q M 7 S 3 317 ■ This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r

Contextual Info: l ü l I f C EL2175C f 120 MHs Precision Current Mode Feedback A mplifler HIGH PLPFPRVASCE ANALOG . M T £ C SIRCUfTS F e a tu re s G en era l D e sc r ip tio n • 30 M il transim pedance 142 M H z - 3 dB bandw idth <AV = + 1 120 M H z - 3 dB bandw idth

EL2175CS

Abstract: EL2175CN QCX0002
Contextual Info: HIGH PtPFPRVASCE ANALOG •S'EGFlATEC CIRCUfTS EL2175C 120 MHs Precision Current Mode Feedback A mptifler F e a tu re s G en era l D e sc r ip tio n • 30 M fi transim pedance 142 M H z - 3 dB bandw idth T he EL2175C is a low offset, h igh transim pedance cu rren t

Contextual Info: H Y 5 1 1 8 1 6 0 B • « H Y U N D A I S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160B Is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

SIEMENS THYRISTOR

Abstract: BR103 us-802 gk 803
Contextual Info: 2SC D • a23SbOS 0004755 T «¡SIEfi \ Silicon Miniature Thyristor 25C 04 755 BR103 D - S I E M E N S AKTIEN6ESELLSCHAF - BR 1 03 is a silicon planar thyristor in a T O -9 2 plastic package 10 A 3 DIN 41868 . This thyristor is suitable for various applications within low power ranges, e.g. controls

smd marking 2D

Abstract: CDFP4-F28 MIL-STD-481 Instructions
Contextual Info: REVISIONS DATE DESCRIPTION LTR APPROVED YR-MO-DA Add "Changes in accordance with NOR 5962-R11592." 92-01-27 M. A. Frye Add software data protection. Increase data retention to 20 years, minimum. Add device types 08 through 16. Remove tests tDHUL, tWH[)xi

04761

Abstract: 80C03 84C300A
Contextual Info: 4 Full Duplex 84C300A 4-Port Fast Ethernet Controller Technology Incorporated h urr ic an e * P R E L IM IN A R Y _ September 1995 Features • Low Power CMOS Technology ■ 4-Port Ethernet Controller Optimized for Switching Hub, Multiport Bridge/Router,