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    Honeywell Sensing and Control PX2BG1XX100BSCHX

    PIEZO HEAVY DUTY PRESSURE TRANSDUCER
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    Honeywell Sensing and Control / MICRO SWITCH PX2BG1XX100BSCHX

    Industrial Pressure Sensors PX Pressure
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    X100BSC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    T045

    Abstract: NSP6191
    Contextual Info: NSP6191 PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW C O L L EC T O R -E M IT TE R SATURATION VOLTAGE DC CURRENT GAIN SPEC IFIED T O S AM PERES EX CELLEN T SAFE O PERA TIN G AREA


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    NSP6191 O-257AA NSP6191 40Vdc, 300ns, T045 PDF

    IRF230

    Abstract: SFF230 MOSFET IRF230
    Contextual Info: §S i — PRELIMINARV SFF230,J SOLID STATE DEVICES, INC r j 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 9 AMP 200 VOLT!5 0.40& N-CHANNE:L POWER MOS FET Designer’s Data Sheet FEATURES: • • •


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    670-SSDI SFF230, IRF230 O-257 SFF230 MOSFET IRF230 PDF

    K120

    Abstract: NESY130 OC44 OC-44 sm43a
    Contextual Info: T im es ? NESY130 POWER MOSFET N CHANNEL • R E P E T IT IV E A V A L A N C H E R A T IN G S • L O W R DS(0 n • L O W D R IV E R E Q U IR E M E N T • D Y N A M IC d v / d t R A T IN G ABSOLUTE MAXIMUM RATINGS (Tc = 25 C unless otherwise noted) SYMBOL


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    NESY130 O-257 oc-446-1158 K120 NESY130 OC44 OC-44 sm43a PDF

    CIB1000

    Abstract: stps205100ct NSP5428 NSP5430
    Contextual Info: NSP5428 NSP5430 PRELIMINARY MEDIUM-POWER NPN SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EM ITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO 7 AMPERES EXCELLENT SAFE OPERATING AREA M AXIM UM RATINGS*


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    NSP5428 NSP5430 O-257AA NSP5430 40Vdc, 300ns, 510ns CIB1000 stps205100ct PDF

    br 003 m 527

    Abstract: IRFY240 K120
    Contextual Info: IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25 C unless otherwise noted) SYMBOL VALUE UNITS D rain-Source V oltage V ds 200 V G ate-Source V oltage


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    IRFY240 O-257 00A/pS, br 003 m 527 IRFY240 K120 PDF

    P Channel Low Gate Charge 100A

    Contextual Info: Back to FETs 0/VEF ^ IP NESY240 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25°C unless otherw ise noted)


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    NESY240 P Channel Low Gate Charge 100A PDF

    Contextual Info: Back to FETs 0 /V EF ^ IP NESY230 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS on • LOW DRIVE REQUIREMENT • DYNAM IC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) D ra in -S o u rc e V o lta g e


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    NESY230 PDF

    Contextual Info: PRELIMINARY MEDIUM-POWER NPN SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EMITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO 7 AMPERES EXCELLENT SAFE OPERATING AREA MAXIMUM RATINGS* RATINGS


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    NSP5428 NSP5430 SP5428, SP5430 PDF

    Contextual Info: Back to FETs IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S


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    IRFY240 PDF

    Contextual Info: Back to FETs iZiA Q T NSG2649 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S


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    NSG2649 PDF

    IRFY044

    Abstract: SFF044J
    Contextual Info: ^§11 PRELIMINARY SFF044J /ii SOLID STATE DEVICES, INC :// u_ 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 35 AMP 60 VOLT 0.035 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: ■ ■ ■ ■


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    670-SSDI SFF044J IRFY044 O-257 SFF044J PDF

    Contextual Info: Back to FETs 0 /V E F ^ IP NESY034 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) SYMBOL


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    NESY034 PDF

    NESY230

    Abstract: SM24A
    Contextual Info: 0 /V EF ^ IP NESY230 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • R EPETITIVE AV A LA N CH E RATIN GS • LOW RDS on • LOW D RIVE REQUIREM ENT • D YNAM IC d v/d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS


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    NESY230 O-257AA XM46-1158 NESY230 SM24A PDF

    K120

    Abstract: NESY034
    Contextual Info: 0 /V E F ^ IP NESY034 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING A B SO LU TE M A X IM U M R A TIN G S (Tc = 25°C unless otherw ise noted) SY M B O L


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    NESY034 O-257 K120 NESY034 PDF

    NSP5153

    Contextual Info: NSP5153 PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • LOW C O L L EC T O R -E M ITT ER SATURATION VOLTAGE 5 AM PERES • DC CURRENT GAIN SPECIFIED T O • EXCELLENT SAKE OPERATING AREA


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    NSP5153 O-257AA NSP5I53 300ns, NSP5153 PDF

    IRF440

    Abstract: K120 SFF440J
    Contextual Info: « S ir a | SFF440J SOLID STATE DEVICES, INC CA 14849 Firestone Boulevard - La Mirada, 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 8 AMP 500 VOLTS 0.86Q N-CHANNEL POWER MOSFET | D e s ig n e r’s Data S h eet FEATURES: • Rugged construction with poly silicon gate


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    SFF440J 670-SSDI IRF440 O-257 F00087 K120 SFF440J PDF

    K120

    Abstract: NSG2649 oc44
    Contextual Info: T im es ? NSG2649 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS(0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) SY M BO L V A LU E U N IT S D rain-Source V oltage


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    NSG2649 O-257 oc-446-1158 K120 NSG2649 oc44 PDF

    Contextual Info: Back to FETs NESY130 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25 C unless otherwise noted) SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage


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    NESY130 PDF

    127C

    Abstract: SSR2040J
    Contextual Info: PRELIMINARY SSR2040J SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 Designer’s Data Sheet FEATURES: Extremely Low Forward Voltage Drop Hermetically Sealed Power Package Guard ring for overvoltage protection


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    670-SSDI SSR2040J O-257 x100BSC 120BSC 127C SSR2040J PDF

    irf420

    Abstract: K120 SFF420J
    Contextual Info: § 5 1 5 1 ro n ffS T A T E DEVICES, INC c c c jo n i V CA 14849 Firestone Boulevard • La Mirada, 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 Designer’s Data Sheet 2.5 AMP ~ 500 VOLTS 3.0Í2 N-CHANNEL POWER MOSFET | FEATURES: • • •


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    670-SSDI SFF420J IRF420 O-257 F00313 K120 SFF420J PDF

    IRLIZ44G

    Contextual Info: PRELIMINARY SFL044J DEVICES, INC in _ X _ 30 AMP 60 VOLT 0.030 Q N-CHANNEL LOGIC LEVEL POWER MOSFET 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 Designer’s Data Sheet FEATURES:


    OCR Scan
    670-SSDI IRLIZ44G O-257 PDF