NESY230 Search Results

Contextual Info: Back to FETs 0 /V EF ^ IP NESY230 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS on • LOW DRIVE REQUIREMENT • DYNAM IC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) D ra in -S o u rc e V o lta g e

NESY230

Abstract: SM24A
Contextual Info: 0 /V EF ^ IP NESY230 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • R EPETITIVE AV A LA N CH E RATIN GS • LOW RDS on • LOW D RIVE REQUIREM ENT • D YNAM IC d v/d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS

CP666

Abstract: CP640 TO-213AA CP664
Contextual Info: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100