X090 Search Results

Contextual Info: VOLTAGE CONTROLLED OSCILLATOR l° M Æ ° 900 -1600 MHz Available as: TOM9090, 4 Pin TO-8 T4 TON9090, 4 Pin Surface Mount (SM3) TOP9090, 4 Pin Flatpack (FP4) B X09090, Connectorized Housing (H1) Features • ■ ■ ■ Low Noise Bipolar Transistor Borad Tuning Range

Contextual Info: VOLTAGE CONTROLLED OSCILLATOR TOM9052 600 - 900 MHz Available as: TOM9052, 4 Pin TO-8 T4 TON9052, 4 Pin Surface Mount (SM3) TOP9052, 4 Pin Flatpack (FP4) B X09052, Connectorized Housing (H1) Features • ■ ■ ■ Broad Tuning Range Low Noise Bipolar Transistor

SIHF10N40D-E3

Contextual Info: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

X09-009PK

Abstract: PLC modem europe XH9-009PK X24-019PK XStream-PKG-RRS-232 009P "routing tables"
Contextual Info: XStream-PKG-E Ethernet RF Modem XStream Ethernet RF Modem System Setup RF Modem Operation RF Modem Configuration RF Communication Modes Appendices Product Manual v5.x00 For XStream RF Modem Part Numbers X09-001PK…-E… X24-009PK…-E. XH9-001PK…-E.

Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

KL SN 102 94v

Abstract: wire T568 SCV64 The VMEbus Handbook, Fourth Ed VMEbus interface handbook Q002 ih 584 el designer manual kds 1555 SAA 1260 Ka 2535
Contextual Info: O p e n b u s In t e r fa c e C o m p o n e n t s SCV64 User Manual Issue 1 * / • bSflfllDl Q[ D24A0 134 ■ This Material Copyrighted By Its Respective Manufacturer T h e in fo rm a tio n in th is d o c u m e n t is su b je c t to c h a n g e w ith o u t n o tic e an d sh o u ld n o t be c o n stru ed as a

Contextual Info: SiHF15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.28 Qg max. (nC) 96 Qgs (nC) 11 Qgd (nC) 21 Configuration Single Note * Lead (Pb)-containing terminations are not RoHS-compliant.

Contextual Info: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low figure-of-merit (FOM) Ron x Qg

STR W 5453 A

Abstract: STR W 5453 AX07CF192 AX07CF192-100 I6I15 ARM processor based Circuit Diagram splitter circuit
Contextual Info: AX07CF192 32-Bit Embedded Flash MCU User’s Manual Preliminary Aeroflex Microelectronic Solutions 4350 Centennial Blvd. Colo. Spgs., CO 80907 www.aeroflex.com January, 2003 Aeroflex Microelectronic Solutions Sales Offices Main Office 4350 Centennial Blvd.

Contextual Info: 19.00 482.6 FRONT PANEL 18.31 465.1 1.71 43.5 1.25 31.8 1-48 POS. ID LABEL ON THE BACK 0.50 12.7 0.25 6.4 TYP 0.44 11.1 TYP 0.34 8.7 TYP INSERT DIN 1.0/2.3 FEED-THRU CONNECTOR 96 HORIZONTAL MARKING STRIP AND STRIP COVER 0.09 2.4 0.58 14.6 1.07 27.1 NOTES:

Contextual Info: SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

tundra scv64

Contextual Info: Table of Contents 1 General Information. 1-1 1.1 Introduction. 1-1 1.2

X09C

Abstract: x02C X01C x01f X092 X062 X0AC X068 X082 X065
Contextual Info: LXT98xx — LXT98x-to-LXT98xx Migration Application Note January 2001 Order Number: 249017-001 As of January 15, 2001, this document replaces the Level One document known as AN111. Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

Contextual Info: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

IEC-127-2

Contextual Info: Miniature Fuses Miniature Fuses IEC Fuses Fuses maintenance set Set 5SF, 5ST, 5HF, 5HT Range 5SF - 5x20 - 250VAC Fast acting F - Low breaking capacity Reference number: G203763 Catalog number: MIBOX5SF According to IEC-127-2 publication standard sheet 2 Breaking capacity under 250 VAC: 35 A or 10 I N

X117Z

Abstract: X075Z X150Z X135Z X096Z berg headers
Contextual Info: PCB Mounted Receptacle Assemblies 2.54 mm O.IOOin. Ordering Data Base number specifies connector style - - 1 I- □ □□□□•XYYYZ T riaiinQ u p n o n s Number of Positions 30 33 36 39 42 45 48 51

Contextual Info: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D TO-220 FULLPAK

RF BASED communication between keypad and pc

Abstract: wireless communication between keypad and pc using RF RF BASED communication between keypad and microcontroller dinsmore 1490 compass circuit compass sensor 1490 abstract for wireless motor control through rf disadvantages of microcontroller RF MODULE CIRCUIT DIAGRAM RS232-2 rf communication
Contextual Info: Application Note RF Communication Using Two MDS GP Application Boards AN019202-1207 Abstract This Application Note describes the communication between two Zilog General-Purpose Modular Development System Application Board MDS GP , each including Z8F642x microcontroller (MCU), via

Contextual Info: SiHF7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.6 Qg max. (nC) 40 • Reduced switching and conduction losses

Contextual Info: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single APPLICATIONS D

ARM922T

Abstract: arm processor ARM1020T ARM720T ARM920T ARM926 ARM940T ARM946 CP15 B0100
Contextual Info: Application Note 99 Core Type & Revision Identification Document number: ARM DAI 0099B Issued: July 2002 Copyright ARM Limited 2002 Copyright 2002 ARM Limited. All rights reserved. Application Note 99 Core Type & Revision Identification Copyright © 2002 ARM Limited. All rights reserved.

VAT300

Abstract: V24-OP1 V24-OP2 ABB inverter motor fault code norma installation tester xe it27 X022K0 N15K TRANSFORMADORES transformador 220v a 12 v
Contextual Info: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE Consumer & Industrial C/o GE Inspection Technologies 129-135 Camp Road St Albans Hertfordshire AL1 5HL, UK VAT300 - Quick Guide GE POWER CONTROLS IBERICA

Contextual Info: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

Contextual Info: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness