X-BAND TRANSISTOR Search Results
X-BAND TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLL1214-35 |
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L-band radar LDMOS driver transistor |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet |
X-BAND TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SKY7755
Abstract: SKY77558
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OCR Scan |
SKY77558 GSM850/900 DCS1800 PCS1900 GSM850/900, DCS1800, 01800A SKY7755 | |
500W TRANSISTOR
Abstract: hvvi
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HVV1011-500L on/18us HVV1011-500L EG-01-PO17X1 500W TRANSISTOR hvvi | |
SKY77570Contextual Info: SKYWORKS' PRODUCT SUMMARY S K Y 775 70 T x-R x FEM for Quad-Band GSM / GPRS / ED G E 6-Band Antenna Switch Support Applications Description • Quad-band cellular handsets SKY77570 is a transm it and receive Front End Module FEM designed in a very low profile |
OCR Scan |
GSM850/900 DCS1800 PCS1900 DCS1800/PCS1900 SKY77570 GSM850/900, DCS1800, 01812A | |
CHA5012Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through |
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CHA5012 CHA5012 DSCHA50126286 | |
99-F
Abstract: CHA5012-99F CHA5012
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CHA5012 CHA5012 DSCHA50126286 99-F CHA5012-99F | |
CHA7010
Abstract: x-Band High Power Amplifier
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CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier | |
x-Band High Power Amplifier
Abstract: 10Ghz RF Power 10w amplifier CHA7010
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CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier 10Ghz RF Power 10w amplifier | |
CHA5012Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description Main Features The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through |
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CHA5012 CHA5012 DSCHA50126066 | |
AN0020
Abstract: CHA5014 9v23
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CHA5014 CHA5014 30dBm DSCHA50140112 AN0020 9v23 | |
x-Band High Power Amplifier
Abstract: CHA7012
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CHA7012 CHA7012 DSCHA70127235 x-Band High Power Amplifier | |
CHA5014Contextual Info: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to |
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CHA5014 CHA5014 30dBm DSCHA50149090-31 | |
CHA7010
Abstract: x-Band High Power Amplifier x band Gaas Power Amplifier 10W
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CHA7010 CHA7010 DSCHA70102175 -24-June-02 x-Band High Power Amplifier x band Gaas Power Amplifier 10W | |
Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride |
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CHA5012 CHA5012 DSCHA50120179 | |
CHA5012Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride |
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CHA5012 CHA5012 DSCHA50120179 | |
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x-Band High Power Amplifier
Abstract: 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters CHA7010
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CHA7010 CHA7010 DSCHA70103135 x-Band High Power Amplifier 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters | |
xr1094
Abstract: FIVE band graphic equalizer 261G6 capacitor 106 16K XR1094CP gph-17 xr-1094
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OCR Scan |
XR-1094 XR-1094 16kHz. 10kHz 16kHz fr60i xr1094 FIVE band graphic equalizer 261G6 capacitor 106 16K XR1094CP gph-17 | |
MA4E1245KE
Abstract: MA4E1245KA MA4E1245KB 350AT S11 SCHOTTKY diode 20/Molectron Detector J100 MA4E1245 transistor schottky model spice microwave diode
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MA4E1245 OT-23 -j100 MA4E1245KE MA4E1245KA MA4E1245KB 350AT S11 SCHOTTKY diode 20/Molectron Detector J100 transistor schottky model spice microwave diode | |
ma4e12Contextual Info: an A M P com pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features • Designed for High Volume Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB SSB at X-Band • High Detector Sensitivity: -55 dBm TSS |
OCR Scan |
MA4E1245 OT-23 ma4e12 | |
NE3517S03-A
Abstract: NE3517S03-T1C NE3517S03 HS350
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NE3517S03 NE3517S03-T1C NE3517S03-T1D NE3517S03-T1C-A NE3517S03-T1D-A NE3517S03-A PG10787EJ01V0DS NE3517S03-A NE3517S03 HS350 | |
NE3517S03
Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
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NE3517S03 NE3517S03-T1C NE3517S03-T1C-A NE3517S03-T1D NE3517S03-T1D-A NE3517S03 rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid | |
C0805C225K9RACTU
Abstract: ECJ-1VB1H103K PCC1784CT-ND R04003
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AWT6222 C0805C225K9RACTU ECJ-1VB1H103K PCC1784CT-ND R04003 | |
mesfet lnb
Abstract: NE72118 NE72118-T1 NE72118-T2 13000 transistor
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NE72118 NE72118 24-Hour mesfet lnb NE72118-T1 NE72118-T2 13000 transistor | |
SG 2368
Abstract: sg 2534 DELTA 0431 180/TTK SG 2368
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OCR Scan |
NE72118 NE72118 24-Hour SG 2368 sg 2534 DELTA 0431 180/TTK SG 2368 | |
MA4E1245
Abstract: S11 SCHOTTKY diode
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OCR Scan |
MA4E1245 OT-23 S11 SCHOTTKY diode |