CHA7012 Search Results

94GHz amplifier

Abstract: CHA7012
Contextual Info: CHA7012 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc Main Features Frequency band: 9.2 -10.4GHz Output power P3dB : 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface

x-Band High Power Amplifier

Abstract: CHA7012
Contextual Info: CHA7012 X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

Contextual Info: CHA7012 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc Main Features 1 1 1 1 1 1 Frequency band: 9.2 -10.4GHz Output power P3dB : 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface

CHA2066-99S

Contextual Info: UMS UNIQUE SPACE SOLUTION A complete selection of catalogue Class S products For many years, UMS has served the needs of the international space community by offering an extensive selection of space evaluated processes: • Low Noise PHEMT PH25, PH15 • Power MESFET (HP07)

PPH25X

Contextual Info: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14