X-BAND MMIC LNA Search Results

Contextual Info: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output

Contextual Info: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output

Contextual Info: bEMSf lST DQlflD'lS 3^4 • MITSUBISHI SEMICONDUCTOR <GaAs MMIC MGF7134P -rv«s' « * * •« ate suW H ^ 2 ta m ^ wriW s""0” 1.90GHz BAND RX^X FRONT-END GaAs MMIC DESCRIPTION MGF7134P is a monolithic microwave integrated circuit for PHS OUTLINE DRAWING

X-band Gan Hemt

Abstract: x-band mmic lna TIC 1268 BiCmos 7400 FMA219-000SQ two bjt bc 107 A219 FMA219 MIL-HDBK-263 SiGe HBT GAIN BLOCK MMIC AMPLIFIER
Contextual Info: FMA219 FMA219 X-BAND LNA MMIC Package Style: Bare Die Product Description Features The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output

GAAS FET AMPLIFIER x-band 10w

Abstract: x-band mmic lna radar block diagram MMIC X-band amplifier diagram radar circuit x-band limiter LNA x-band Three MMIC Solution for an X-band RF Front End radar system with circuit diagram x-band mmic
Contextual Info: May 2006 A Three MMIC Solution for an X-band RF Front End by M/A-COM Introduction /A-COM has developed new MMICs for X-band radar applications that condense the RF front end into a set of only 3 MMICs. An equivalent set of single function MMICs might require 9 to 11 MMICs. Reducing

Contextual Info: NJG1800NB2 High Isolation X-SPDT DP4T SWITCH • GENERAL DESCRIPTION The NJG1800NB2 is a GaAs X (cross) – SPDT (DP4T) switch MMIC, which is designed for switching of balanced (differential) dual band filters. The switch IC features very low insertion loss and very high isolation for

Contextual Info: NJG1800NB2 High Isolation X-SPDT DP4T SWITCH • GENERAL DESCRIPTION The NJG1800NB2 is a GaAs X (cross) – SPDT (DP4T) switch MMIC, which is designed for switching of balanced (differential) dual band filters. The switch IC features very low insertion loss and very high isolation for

x-band mmic core chip

Abstract: CHA7215 mmic core chip CHA8100 wide band phase shifter pulse compression radar x-band mmic lna CHA7115 radar system with circuit diagram x-band accuracy
Contextual Info: Product Feature T/R Module Solution for X-band Phasedarray Radar U nited Monolithic Semiconductors UMS has a considerable heritage in the design and production of MMIC solutions for space and defense programs. This extensive experience has been used to design

UM 9515

Abstract: x-band mmic lna FMA219 LNA 9GHz Z 8607
Contextual Info: FMA219 Datasheet v3.0 X-BAND LNA MMIC FEATURES: • • • • • • LAYOUT: 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports GENERAL DESCRIPTION:

UM 9515

Abstract: Filtronic
Contextual Info: FMA219 Datasheet v2.3 X-BAND LNA MMIC FEATURES: • • • • • • LAYOUT: 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports GENERAL DESCRIPTION:

x-band mmic lna

Abstract: x-band mmic LNA x-band FMA219BF FMA219 MIL-HDBK-263 bc 408 equivalent LNA 9GHz
Contextual Info: PRELIMINARY • PERFORMANCE ♦ 7.0 – 11.0 GHz Operating Bandwidth ♦ 1.5 dB Noise Figure ♦ 21 dB Small-Signal Gain ♦ 12 dBm Output Power ♦ +3V Single Bias Supply ♦ DC De-coupled Input and Output Ports • DESCRIPTION AND APPLICATIONS FMA219 X-BAND LNA MMIC

X-band lna

Abstract: x-band mmic lna FMA219 LNA 9GHz
Contextual Info: PRELIMINARY • PERFORMANCE ♦ 7.0 – 11.0 GHz Operating Bandwidth ♦ 1.5 dB Noise Figure ♦ 21 dB Small-Signal Gain ♦ 12 dBm Output Power ♦ +3V Single Bias Supply ♦ DC De-coupled Input and Output Ports • DESCRIPTION AND APPLICATIONS FMA219 X-BAND LNA MMIC

CAP 0402

Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
Contextual Info: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm

Infineon CMH192 GaAs

Abstract: CMH192 mmic MIXER 210
Contextual Info: GaAs MMIC CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -9.0 to 0 dBm

PG311

Contextual Info: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm

k608

Abstract: MMIC marking CODE c4 CMH192 GRP1555C7H100JZ01 mmic marking L MMIC CODE c4
Contextual Info: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm

MAALGM0002-DIE

Abstract: X-band low noise N4 MMIC x-band mmic lna RO-P-DS-3061 MAALGM002-DIE x-band mmic
Contextual Info: RO-P-DS-3061 MAALGM0002-DIE X-Band Low Noise Amplifier 8.0-12.0 GHz Preliminary Information 8.0-12.0 GHz GaAs MMIC Amplifier Features ♦ ♦ ♦ ♦ 2.3 dB Noise Figure 8.0-12.0 GHz Operation Self-Aligned MSAG MESFET Process Variable Voltage Operation Vd = 3-5V

x-band limiter

Abstract: x-band mmic LNA x-band MMIC limiter band Limiter MA01503D
Contextual Info: RO-P-DS-3003 - - MA01503D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features ♦ ♦ ♦ ♦ 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process

x-band limiter

Abstract: x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter MA01502D 6 ghz amplifier 10w
Contextual Info: RO-P-DS-3002 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features ♦ ♦ ♦ ♦ 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process

x-band limiter

Abstract: x-band mmic band Limiter MA01503D LNA x-band MMIC limiter mmic AMPLIFIER x-band 10w LNA XBAND
Contextual Info: V 1.00 MA01503D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features ♦ ♦ ♦ ♦ 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process Primary Applications

RO-P-DS-3061

Abstract: X-band lna x-band lna chip x-band mmic lna MMIC X-band amplifier MAALGM002-DIE
Contextual Info: RO-P-DS-3061 MAALGM0002-DIE X-Band Low Noise Amplifier 8.0-12.0 GHz Preliminary Information 8.0-12.0 GHz GaAs MMIC Amplifier Features ♦ ♦ ♦ ♦ 2.3 dB Noise Figure 8.0-12.0 GHz Operation Self-Aligned MSAG MESFET Process Variable Voltage Operation Vd = 3-5V

x-band limiter

Abstract: MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter MA01502D x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w
Contextual Info: V 1.00 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features E E E E 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process Primary Applications

CMH0819

Abstract: VQFN-24
Contextual Info: GaAs MMIC CMH0819 Target Datasheet • High-Linearity, Dual-Band LNA/Mixer IC for PCS IF Out use in TDMA and CDMA Mobile Phones • Integrated bypass switch for LNAs LNA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LO CELLULAR • LO – Input power range: -7.0 to 0 dBm

mmic c8

Abstract: mmic MIXER 210 CMH192 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608
Contextual Info: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/M ixer IC for use in US and Korean band CDM A Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SM T package • LO Input power range: -7.0 to 0 dBm