X-BAND MICROWAVE FET Search Results

30349

Abstract: 136423
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R275, NE960R575 0.2/0.5 W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NE960R275 and NE960R575 are 0.2/0.5 W GaAs MESFETs designed for middle power transmitter applications for X, Ku-band microwave communication systems. It is capable of delivering 0.2/0.5 watt of output

RPX 200

Contextual Info: RAYTTTTöN" COV MXCROUJAVE 70 & Raytheon Company Special Microwave Devices Operation v 75T?E21 □□□□401 □ 617 393 7300 Bearfoot Road ' Northboroligh, M A O 1532 - O f 7597221 RAYTHEON ICO» MICROWAVE £ 760-00401 RPX 6000 Series X-Band Power GaAs FET s

TIM1414-4A

Contextual Info: TOSHIBA TIM1414-4A MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package

TIM1414-5

Contextual Info: TOSHIBA TIM1414-5 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =37.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB =6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package

TIM1414-8

Contextual Info: TOSHIBA TIM1414-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package

TIM1415-8

Contextual Info: TOSHIBA TIM1415-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 4.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package

TIM1415-2

Contextual Info: TOSHIBA TIM1415-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package

TIM1414-15

Contextual Info: TOSHIBA TIM1414-15 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =42.0 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package

TIM1414

Abstract: TIM1414-10A
Contextual Info: TOSHIBA TIM1414-10A MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package

TIM1415-4

Contextual Info: TOSHIBA TIM1415-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 5.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 5.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package

Tic 4148

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz • High gain - G 1dB = 5.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package

JE 33

Contextual Info: TOSHIBA TIM1415-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 4.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4A Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G 1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-1OA Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G 1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =37.5 dBm at 14.0 GHz to14.5 GHz • High gain - G 1dB =6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package

k 1413 FET

Abstract: MGF1601B MGF1601
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters

MGF1801B

Abstract: Microwave power GaAs
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters

k 1413 FET

Abstract: mitsubishi microwave MGF1801B MGF1801 MGF1
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters

MGF1601B

Abstract: mitsubishi microwave MGF1601
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package