TIM1414 Search Results

TIM1414-4LA-371

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 37.0 38.0 — dBm

5252 F ic

Contextual Info: TOSHIBA July 1997 TIM1414-5-252 1. R F PERFO R M A N CE SP E C IFIC A T IO N S CHARACTERISTICS SYMBOL Output Power at ldB Compression Point P i dB Power Gain at ldB Compression Point GldB CONDITION MIN. TYP. MAX. UNIT 36.5 37.5 — dBm 4.5 5.5 — dB - 2.0

Contextual Info: TOSHIBA July 1997 TIM1414-15-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent — ; Power Added Efficiency SYMBOL PldB GldB CONDITION VDS= 9V f= 13.75-14.5GHz Ids

TIM1414-4

Contextual Info: TOSHIBA TIM1414-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package

TS 4142

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4A Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G 1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-18L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=42.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION

Contextual Info: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL O u tp u t Power at ldB Compression Point PlcLB Power Gain at ldB Compression Point G ldB D rain C urrent I ds i>dd Power Added Efficiency CONDITION f =13.75-14.5GHz 37.0

RX 3E

Abstract: RX- 3E RX-3E K30 FET TIM1414-10B RX-3E 8 rx3e FET K30 T1M1414-10B
Contextual Info: T O S H IB A MICROWAVE POWER GaAs M IC R O W A V E S E M IC O N D U C T O R TIM1414-10B TEC H N IC A L DATA FE A TU R ES: H HIGH POWER P isa 28 40.5 dBm a t 14.0 GHz to 14.5 GHz BROAD BAND INTERNALLY MATCHED 3 HIGH GAIN Gida 3 8.0 dB at 14.0 GHz to 14.5 GHz

5252 F ic

Abstract: ic 5252 F
Contextual Info: TOSHIBA July 1997 TIM1414-5-252 1. R F PERFO R M A N CE SP E C IF IC A T IO N S CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL PldB G ldB CONDITION Pinch-off Voltage Saturated Drain Current

TIM1414-4LA

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-4LA P reliminaly MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=36.5dBm at 14.0GHz to 14.5GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C

TIM1414-8L

Contextual Info: TOSHIBA TIM1414-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 14.0 GHz to 14.5 GHz

TIM1414-15L

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 30.0dBm Single Carrier Level „ HIGH POWER P1dB=42.0dBm at 14.0GHz to 14.5GHz „ HIGH GAIN G1dB=6.0 dB at 14.0 GHz to 14.5GHz

TIM1414-10LA-252

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-10LA-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz „ HIGH GAIN G1dB=5.5dB at 13.75GHz to 14.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM1414-7

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-7 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=38.5 dBm at 14.0 GHz to 14.5 GHz „ HIGH GAIN G1dB=6.5 dB at 14.0 GHz to 14.5 GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

5252 F

Abstract: 5252 f VOLTAGE TIM1414-5-252 5252 5252 F 1
Contextual Info: MICROWAVE POWER GaAs FET TIM1414-5-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=37.5 dBm at 13.75 GHz to 14.5 GHz „ HIGH GAIN G1dB=5.5 dB at 13.75 GHz to 14.5 GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE

TIM1414-18L

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-18L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=42.5dBm at 14.0GHz to 14.5GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz „ LOW INTERMODULATION DISTORTION

M1414

Abstract: TIM1414-4 Vgsoff
Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs F ET S E M IC O N D U C T O R TIM1414-4 TECHNICAL DATA FEATURES: • HIGH POWER PídB = 36.5 dBm at 14.0 GHz to 14.5 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN ■ HERMETICALLY SEALED PACKAGE GldB = 6.0 dB at 14.0 GHz to 14.5 GHz

TIM1414-18L-252

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-18L-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES T HIGH POWER T BROAD BAND INTERNALLY MATCHED P1dB=42.0dBm at 13.75GHz to 14.5GHz T HIGH GAIN T HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz T LOW INTERMODULATION DISTORTION

TIM1414-4A

Contextual Info: TOSHIBA TIM1414-4A MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package

TIM1414-5

Contextual Info: TOSHIBA TIM1414-5 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =37.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB =6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 14.0GHz to 14.5GHz „ HIGH GAIN G1dB=8.0dB at 14.0GHz to 14.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS