X-BAND HIGH POWER AMPLIFIER Search Results

CHA8100

Abstract: x-Band High Power Amplifier AN0020 CHA8100-99F 41dBm vcx8 mar105
Contextual Info: CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power

CHA7115

Abstract: x-Band High Power Amplifier 39dBm x-band power amplifier
Contextual Info: CHA7115 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications. The HPA provides typically 8W output power associated to 36% power added efficiency at

Contextual Info: united monolithic semiconductors CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS

CHA7010

Abstract: x-Band High Power Amplifier
Contextual Info: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP

MMIC X-band amplifier

Contextual Info: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF

SSPA

Abstract: x-Band High Power Amplifier x-band power transistor Solid State Microwave x band high power amplifier x band receiver x band pulsed amplifier x band satellite
Contextual Info: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 9.5-10.5-20 is a high power, • 20 watts typical CW or pulsed RF power X band, solid state power amplifier. Class AB biasing • Operation from 9.5 to 10.5 GHz affords high output power pulsed or CW while

CHA7010

Abstract: x-Band High Power Amplifier x band Gaas Power Amplifier 10W
Contextual Info: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

X-band Gan Hemt

Abstract: FMA3015 MIL-HDBK-263 9-GHz
Contextual Info: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Die: 4.52mmx3.05mm Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare

Contextual Info: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare

X-band Gan Hemt

Abstract: MIL-HDBK-263 fma3010
Contextual Info: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare

DBS-1011N530

Abstract: 1011n Electromechanical
Contextual Info: Main Menu Power Meters/Monitors RF Radiation Safety Products Active Components Passive Components Electromechanical RF Switches Wireless Products Standard Communication Band Amplifiers X-BAND, HIGH POWER LINEAR AMPLIFIERS SPECIFICATIONS MODEL NUMBER FREQUENCY

AETHERCOMM

Abstract: Acros
Contextual Info: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 7.1-7.3-10 is a High Power X • 5 watts linear or pulsed RF power min Band SSPA used in the DSCC Exciter-Transmitter • Operation from 7.1 to 7.3 GHz Subsystem. It is used as a TWT driver amplifier. It

X-band amplifier

Abstract: 462 008 0004 00 AF
Contextual Info: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5~13.3GHz Impedance Matched Zin/Zout=50 Device DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the

AM7808CLT

Contextual Info: AM7808 AM7808HighEfficiency Quad-Band Tx Dual-Band Rx GSM/GPRS CMOS Tx Module High-Efficiency Quad-Band Tx Dual-Band Rx GSM/GPRS CMOS Tx Module Package: LGA, 5.25mm x 5.30mm x 0.80mm RX1 TM AdaptiveRF HB_IN Features  ANT Extended Power Added Efficiency

FMC2122C6-03

Contextual Info: FMC2122C6-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 18dBm Typ. High Gain: G1dB = 13dB(Typ.) Low In/Out VSWR Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC141501-01

Abstract: k-band amplifier
Contextual Info: FMC141501-01 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 18.0dB(Typ.) Low In/Out VSWR Broad Band: 14.4 ~ 15.3GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC2223C6-03

Contextual Info: FMC2223C6-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 18dBm Typ. High Gain: G1dB = 13dB(Typ.) Low In/Out VSWR Broad Band: 22.4 ~ 23.6GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC1819P1-01

Contextual Info: FMC1819P1-01 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 21dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC2122P1-02

Contextual Info: FMC2122P1-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 21dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC1819C6-02

Contextual Info: FMC1819C6-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 18dBm Typ. High Gain: G1dB = 14.5dB(Typ.) Low In/Out VSWR Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC1718P1-01

Abstract: Fujitsu Ku microwave aeg 558
Contextual Info: FMC1718P1-01 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 21dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC1718C6-02

Contextual Info: FMC1718C6-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 18dBm Typ. High Gain: G1dB = 14.5dB(Typ.) Low In/Out VSWR Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

Contextual Info: PF0310 MOS FET Power Amplifier Module for VHF Band HITACHI Application VHF Band 136 to 150 MHz Features • Small package: 30 x 10 x 5.9 mm • High efficiency: 55% Typ • Low power control current: 0.5 mA Max Pin Arrangement ADE-208-103B Z 3rd Edition

EMM5068

Contextual Info: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5 to 13.3GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages