X-BAND DRO Search Results

Gunn Diode

Abstract: Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
Contextual Info: Product List TYPE No. DESCRIPTION DA1304 DA1307 MILLIMETRE WAVE BALANCED MIXER 34.0 to 34.4GHz BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER

DOPPLER 10.525

Abstract: NJR4178J Doppler Sensor motion sensor doppler NJR4178 x-band dro DOPPLER 10.525 ghz motion DOPPLER microwave doppler sensor microwave motion sensor
Contextual Info: X-band Doppler Sensor Module MODEL NO. NJR4175 / 76 / 77 / 78 / 81 / 78J <Description> This specification covers the general requirements for X-band microwave Doppler module. This module is designed for motion sensing applications. It consists of DRO Dielectric Resonator Oscillator , balanced

WR284* ISOLATOR

Abstract: MS3116E-10-6S WR340 flange dimensions
Contextual Info: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS

LTCC X band

Abstract: LTCC GHz multilayer GHz ltcc 3225
Contextual Info: WPBPF SERIES - 3225 1210 MULTILAYER CERAMIC BAND PASS FILTER 2.4 GHz ISM Band Working Frequency WPBPF001A Page 1 of 7 Sep. -2001 FEATURES 1. Multilayer LTCC ( Low Temperature Cofired Ceramics ) Technology 2. Reflow solderable 3. Miniatured Size 3.2 x 2.5 x 1.5 mm3

WPSM

Abstract: WPSML LTCC X band LTCC GHz ltcc 3225
Contextual Info: WPSMLBPF SERIES - 3225 1210 MULTILAYER CERAMIC BAND PASS FILTER 2.4 GHz ISM Band Working Frequency WPSMLBPF001A Page 1 of 7 Sep. -2001 FEATURES 1. Multilayer LTCC ( Low Temperature Cofired Ceramics ) Technology 2. Reflow solderable 3. Miniatured Size 3.2 x 2.5 x 1.5 mm3

klystron x 13

Abstract: klystron Klystrons mpp 250
Contextual Info: cpi[ CPI Microwave Power Products’ MPP klystrons were the first to be used in both commercial and military satellite communications uplinks and are now the worldwide standards for this class of operation covering C-band, X-band and Ku-band frequencies. In 1977, MPP introduced high performance Ka-band amplifiers for earth-satellite

VKA-7934

Abstract: Ka-Band klystron klystron x 13 10 GHz klystron VA klystron x-band ka-band amplifier klystron vka-7934 klystron ku band kaba
Contextual Info: cpi[ CPI Microwave Power Products’ MPP klystrons were the first to be used in both commercial and military satellite communications uplinks and are now the worldwide standards for this class of operation covering C-band, X-band and Ku-band frequencies. In 1977, MPP introduced high performance Ka-band amplifiers for earth-satellite

X-band radar module

Abstract: MAAP-009748-000000
Contextual Info: MAAP-009748-000000 X-Band 17W Pulsed Power Amplifier Module 8.5 - 11.0 GHz 2010 Data Sheet v1 The most important thing we build is trust Features Description • Nominal 17W Peak Output Power The Cobham Sensor Systems X-Band 17W Module is a class A biased GaAs

MIL-STD-188-164A

Abstract: MIL-STD-188-164 IESS-308 CPI 750 watt twt tube solar panels at satellites CPI 750 twt tube
Contextual Info: 750W Outdoor TWT Medium Power Amplifier for Satellite Communications X- Band The VZX-6987V7 X-Band 750 Watt TWT Medium Power Amplifier — high efficiency in an environmentally sealed compact package designed for outdoor operation Easy to Maintain Provides 750 watts of power in a rugged and

500W TRANSISTOR

Abstract: hvvi
Contextual Info: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating

Contextual Info: Solid State Pulsed Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-15 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state pulsed power amplifier that operates • Pulsed RF and Pulsed DC Operation

S416a

Abstract: s1815 SKY65126 GRM188R71H332KA01D transistors cross referance transmitter QAM schematic diagram S1818 sky65152 Skyworks PA LTE Power Amplifier Module for GSM
Contextual Info: PRELIMINARY DATA SHEET SKY65126-21: 800-900 MHz High Linearity 2 W Power Amplifier Applications VCC2 VREF1 VREF2 VC_BIAS VCC2 x WCDMA/CDMA/TDMA/GSM/LTE x Repeaters Active Bias x WLL and ISM band transmitters x Mobile radios x Femto cell base stations RF_IN

Contextual Info: 19-1352; Rev 0; 4/98 "ÿSST- 900MHz Image-Reject Receivers The M AX2440/M A X 2441/M A X 2442 hig hly integrated front-end receiver ICs provide the lowest cost solution for cordless phones and ISM-band radios operating in the 900MHz band. All devices incorporate receive imagereject mixers to reduce filter cost. They operate with a

EGSM900

Abstract: GSM900 RF3140 RF3140PCBA-41X
Contextual Info: RF3140 RF3140QuadBand GSM850/GSM 900/DCS/PCS Power Amp Module QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE NOT FOR NEW DESIGNS VCC2 Pb-Free Product Package Style: Module 10 mm x 10 mm Features „ 10mmx10mm Package Size 3V Quad-Band GSM Handsets VREG 5

RFMD 7325

Contextual Info: DRAFT RF3145 DRAFT RF3145QuadBand GSM/EDGE/G SM850/DCS/ PCS Power Amplifier Module QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE NC RoHS Compliant & Pb-Free Product Package Style: Module 10 mm x 10 mm 12 Features „ „ „ „ „ Integrated Power Control & Band

S1502

Abstract: SKY65152-11 sky65152
Contextual Info: DATA SHEET SKY65152-11: 2.4-2.5 GHz WLAN Power Amplifier Applications Description x IEEE 802.11 b/g WLANs x ISM band transmitters x WCS fixed wireless x Wireless access nodes The SKY65152-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity,

NJR4261J

Abstract: NJR4261 doppler NJR4261J Doppler Sensor K-band DOPPLER 24ghz Doppler Sensor microwave doppler sensor doppler ghz dielectric resonator oscillator NEW JAPAN RADIO NJR4261
Contextual Info: New Product K-band 24GHz Doppler Sensor Module [Dual Type] MODEL NO. NJR4261 / 61J <Features> * DRO (Dielectric Resonator Oscillator) for 24GHz direct oscillation * Small size : 44.3 mm x 22.1 mm x 9.4 mm * Low Power Consumption : 50 mA max. @+5V DC * Flexibility of selection for Antenna (Horn and patch antenna)

DOPPLER 24ghz

Abstract: NJR4251J Doppler Sensor Doppler Sensor K-band NJR4251 doppler Antenna horn NEW JAPAN RADIO cw doppler K 2411
Contextual Info: New Product K-band 24GHz Doppler Sensor Module [Single Type] MODEL NO. NJR4251 / 51J <Features> * DRO (Dielectric Resonator Oscillator) for 24GHz direct oscillation * Small size : 44.3 mm x 22.1 mm x 9.4 mm * Low Power Consumption : 50 mA max. @+5V DC * Flexibility of selection for Antenna (Horn and patch antenna)

FU-39SPD-L

Contextual Info: WZ700019B 1/3 MITSUBISHI (OPTICAL DEVICES) FU-39PD/SPD-x PIN-PD MODULE FOR LONG WAVELENGTH BAND DESCRIPTION FU-39PD/SPD-xx is detector module containing highly reliable InGaAs pin photodiode for long wavelength band (1~1.6µm) and high-speed response. These module are used as detector for high-speed, long

WPSM

Abstract: WPSML LTCC X band
Contextual Info: Multilayer Ceramic Normal Band Pass Filter (3225) Bluetooth & WLAN IEEE 802.11b/g Construction Feature • • • • • • WPSMLBPF001G Multilayer LTCC (Low Temperature Co-Fired Ceramics) technology Reflow solderable 3 Miniature size 3.2 x 2.5 x 1.5mm

Contextual Info: Part Number: Integra IB1416S650 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1416S650 is designed for L-Band avionics systems operating at 1450 to 1550 MHz. While operating in class C mode under 0.5us ON, 1.5 us off x 50, 1%

rf mems switch

Abstract: 2SMES-01 MEMS SWITCH 2SMES-01-EVBA 4350B rf mems
Contextual Info: RF MEMS Switch 2SMES-01 Miniature, 10 GHz Band typical SPDT (transfer contacts) RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical/8 GHz rated (50 Ω) ➜ Isolation of 30 dB ➜ Insertion loss of 1 dB • Ultra-miniature 5.2 x 3.0 x 1.8 mm (L x W x H).

oscillator 77 GHZ

Abstract: TLCO01981 W-BAND radar mmic TLC Precision Wafer Technology W-band w-band mmic multiplier mmic radar mmic OSC-JG95W33
Contextual Info: L TO W-BAND MMIC OSCILLATOR & MULTIPLIER OSC-JG95W33 TLCO01981 "O" CHIP • 2 to 80 GHz OPERATION • MULTIPLIER, VCO, ILO, DRO • P0 > 16 dBm @ 38 GHz • P0 > 2 dBm @ 77 GHz • -100 dBc/Hz @ 100 KHz Size: 2.17 x 1.3 x 0.1 mm 10dB / div DESCRIPTION AND APPLICATIONS

rf mems switch

Abstract: automatic transfer switch circuit diagram MEMS SWITCH 2SMES-01-EVBA rf mems 2SMES-01 N5230 4350B structure MEMS IC
Contextual Info: RF MEMS Switch 2SMES-01 Miniature, 10 GHz Band typical SPDT (transfer contacts) RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical/8 GHz rated (50 Ω) ➜ Isolation of 30 dB ➜ Insertion loss of 1 dB • Ultra-miniature 5.2 x 3.0 x 1.8 mm (L x W x H).