X BAND TRANSMITTER Search Results

Contextual Info: DATA SHEET SKY65233-11: WLAN 802.11n Single-Band 2.4 GHz 2 x 2 MIMO Front-End Module with 3 Antenna Ports Features ● ● ● ● ● ● ● ● ● ● ● Description Single-band 2.4–2.5 GHz 2 x 2 MIMO architecture Two full 2.4–2.5 GHz transmit/receive chains

S1502

Abstract: SKY65152-11 sky65152
Contextual Info: DATA SHEET SKY65152-11: 2.4-2.5 GHz WLAN Power Amplifier Applications Description x IEEE 802.11 b/g WLANs x ISM band transmitters x WCS fixed wireless x Wireless access nodes The SKY65152-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity,

J027

Abstract: TGA49
Contextual Info: TGA4906-SM 4 Watt Ka-Band Power HPA Applications Ka-Band Sat-Com VSAT QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 28 – 31 GHz Power: 36 dBm Psat Gain: 23 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.7 V Typical Package Dimensions: 5.0 x 5.0 x 1.2 mm

RF5355

Abstract: transistor c 5299 DATA
Contextual Info: RF5355 3.3 V, 5 GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2 mm x 2.2 mm x 0.45 mm Features „ „ „ „ „ Single Supply Voltage 3.0 V to 5.0 V No external matching components 28 dB Typical Gain Across Band POUT = 17 dBm @ <4% TYP EVM across Operating Band

SKY77526

Abstract: sky77512 sky77506 SKY77526-XX sky77512-xx EM250 EM260 LDB182G4520C-110 SKY65336-11 R0225
Contextual Info: DATA SHEET SKY65336-11: 2.4 GHz Transmit/Receive Front-End Module with Integrated LNA Applications Description x 2.4 GHz ISM band radios Skyworks SKY65336-11 is a high-efficiency Front-End Module FEM for ZigBee and other 2.4 GHz ISM band applications. The

NE960R5

Abstract: NE960R500 NE960R575 NE961R500 NE962R575
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power CW with high linear

NE960R2

Abstract: NE960R200 NE960R275 NE961R200
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear

rf3235

Contextual Info: RF3235 RF3235QUADBAND GSM/GPRS Tx MODULE WITH UMTS TRANSMIT/RECEIVE PORTS QUAD-BAND GSM/GPRS Tx MODULE WITH UMTS TRANSMIT/RECEIVE PORTS GND GND GND TRX2 TRX3 TRX4 GND GND GND GND GND Package: Module 30-pin, 6mm x 6mm x 1mm  Integrated VBATT Tracking Circuit

CHM1193

Abstract: IF2G
Contextual Info: CHM1192 K- Band Mixer GaAs Monolithic Microwave IC Description Main Features ¦ 36-38 GHz LO frequency range ¦ IF from 1 to 3 GHz ¦ Low conversion loss up & down ¦ High LO/RF isolation ¦ Low LO input power ¦ Small chip size: 1.53 x 1.53 x 0.10 mm LO IF

3797A

Abstract: social networks "ANT Frequency Agility" application note ANT Frequency Agility application note 003W
Contextual Info: ANT USB2 Stick FEATURES • 2403 to 2480MHz worldwide ISM band  78 selectable RF channel  59 x 18 x 8 mm  ANT channel combined message rate up to 190Hz 8byte data payload  Minimum message rate per ANT channel 0.5Hz  Burst transfer rate up to 20Kbps (true data throughput)

qfn 32 5x5 STENCIL

Contextual Info: TGA4906-SM 4 Watt Ka-Band Packaged HPA Key Features • • • • • • Measured Performance Frequency Range: 28 - 31 GHz Psat: 36 dBm Gain: 23 dB Return Loss: -12 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical Package Dimensions: 5 x 5 x 1.19 mm

lds21l

Abstract: OFDM542 SKY65230-11
Contextual Info: data sheet SKY65230-11: WLAN 802.11n 2 x 2 MIMO Intera FrontEnd Module with 3 Antenna Ports Features l l l l l l l l l l l Description 2 x 2 MIMO architecture T wo full dual-band transmit/receive chains 3rd antenna provides switch diversity on both chains

TAA550

Abstract: C TV memory ic programme IC TV SCAN TUNING PROGRAM CTS-512 M494B1 2 digit, 7 segment COMMON ANODE TDA8160 "pin compatible" 2-DIGIT 7-SEGMENT LED DISPLAY datasheet BC177 pin configuration all ic data M708
Contextual Info: M494 SINGLE-CHIP VOLTAGE TUNING SYSTEM WITH 4 ANALOG CONTROLS AND µP INTERFACE . . . . . . . . . . . . . . . NON-VOLATILE MEMORY FOR 20 PROGRAM WORDS 17 BIT x 20 - TUNING VOLTAGE 12 BITS - BAND 2 BITS - MULTI STANDARD 2 BITS - PROGRAM SKIP BIT 1 BIT

mcl 600

Contextual Info: Plug-In Bandpass Filter 50Ω Elliptic Response 0"0 . 0"0 . 30 to 40 MHz Maximum Ratings Features -40oC to 85oC -55oC to 100oC 0.5W at 25oC Operating Temperature Storage Temperature RF Power Input • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.77" X 0.40" X 0.40"

BLU98

Abstract: L9 transistor transistor 4312 International Power Sources Planar choke SOT-103 transistor SOT103 l4 tam philips capacitor cross reference sot103
Contextual Info: PHILIPS INTERN A T I O N A L bSE T> m 711DÖSL GOtSTÖD 732 BLU98 IPHIN X U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed fo r use in mobile radio transmitters in the 9 0 0 M Hz band. Features: • emitter-ballasting resistors fo r an optim um temperature profile

C 5478 transistor

Abstract: transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 NEL2004F02-24 173278 LARGE SIGNAL IMPEDANCES
Contextual Info: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) BASE 3±0.2 2±0.2 2±0.2 2 X φ3.2±0.3

Contextual Info: S G S -T H O M S O N M494 i[LG SINGLE CHIP VOLTAGE TUNING SYSTEM WITH 4 ANALOG CONTROLS AND *iP INTERFACE NV M EM ORY FOR 20 PROGRAM W ORDS 17 BIT x 20 . TUNING VOLTAGE 12 BITS . BAND 2 BITS . MULTI STANDARD 2 BITS - PROGRAM SKIP BIT 1 BIT - 10,000 M ODIFY CYCLES PER W ORD

MC5864

Abstract: NEC RF MODULE 5865 IGG1
Contextual Info: NEC MC-5864 MC-5865 X-BAND GaAs THIN FILM HYBRID MODULE OUTLINE DIMENSIONS FEATURES Units in mm O U TLIN E MCX03 • MEDIUM P O W ER O U TP U T MC-5864: PidB = 20.5 dBm T Y P a t f = 14.0 to 14.5 GHz DENOTES INPUT END — — 3.0 (6 PLACES) —• 15.5 ±02

phase shifter 2GHz

Abstract: SMV1235-074 TQ7M35 p8mi
Contextual Info: Preliminary: Subject to change without notice CELL_LO DA TQ7M35 PWR_UP CELL_A DA DA PCS_LO DATA SHEET DA VCNTRL Phase Shifter Phase Shifter ÷2 Phase Shifter TCXO 3V HBT SiGe CDMA Transmitter VCC_VGA VGA VGA VCC_LO CELL_B VCC_DRV PCS_B PCS_A VCC_IQ AB_SEL

zigbee antenna diversity

Abstract: transistor 2.4GHz amplifier schematic wifi transistor 2.4GHz amplifier schematic 2.4 ghz transistor wifi amplifier wifi schematic in mobile NE3508M04 SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR uPG2015TB uPG2150T5L SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER
Contextual Info: NEC / CEL Components For 2.4GHz ZigBee and ISM Band Applications 2008 v.6 Components for 2.4 GHz Designs Bluetooth, Bluetooth, ZigBee, ZigBee, ISM ISM Band Band Transmitters Transmitters SPDT Switches*: uPG2214TB/TK uPG2030TK uPG2179TB uPG2158T5K uPG2012TK

Contextual Info: Complies with Directive 2002/95/EC RoHS Product Overview TXC101 is a highly integrated single chip, multi-channel, low power, high data rate RF transmitter designed to operate in the unlicensed 315/433/868 and 915 MHz frequency bands. All critical RF and baseband functions are

433MHz RFID Active

Abstract: 433 315 MHz Power Amplifier 300 ohm 375 KHZ Antenna 433MHz Active RFID tag 433mhz ask remote control high power 433MHZ ask transmitter POWER AMPLIFIER CIRCUIT DIAGRAM 10000 rfid circuit diagram TX 433 .92MHz TX 433 .92MHz layout
Contextual Info: Complies with Directive 2002/95/EC RoHS I. Product Overview TXC100 is a rugged, single chip OOK/ASK/FSK Transmitter IC in the 300-450 MHz frequency range. This chip is highly integrated and has all required RF functions including a complete PLL circuit and power amplifier, thus requiring very

TXC101

Abstract: TXC102 433MHz rfid PLL 2400 MHZ
Contextual Info: Complies with Directive 2002/95/EC RoHS Product Overview TXC102 is a highly integrated single chip, multi-channel, low power, high data rate programmable RF transmitter ideal for the worldwide market and operates in the 433, 868 and 915 MHz frequency bands. The TXC102 is

433 transmitter pcb layout

Abstract: 433 315 MHz RF Transmitter ASK transmitter 433mhz sc3901 AS3901-001 315/433MHZ ASK 433 315 MHz RF Receiver 433 mhz transmitter TX 433 RF TRANSMITTER 433MHz saw Based Transmitter Schematic
Contextual Info: $1  YDOXDWLRQ %RDUG IRU WKH $6 $6. 6. ,60 %DQG  0+] 7UDQVPLWWHU $SSOLFDWLRQ 1RWH 5HY % 6HSWHPEHU  Evaluation Board for the AS3901-001 ASK/FSK ISM Band 315/433 MHz Transmitter AN 3901-001 6ˆ†‡…vhÃHvx…‚ÃT’†‡r€rÃD‡r…h‡v‚hyÃ6B