X BAND POWER TRANSISTOR Search Results

CHA7010

Abstract: x-Band High Power Amplifier
Contextual Info: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP

AN0020

Abstract: CHA5014 9v23
Contextual Info: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to

CHA7010

Abstract: x-Band High Power Amplifier x band Gaas Power Amplifier 10W
Contextual Info: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

C0805C225K9RACTU

Abstract: ECJ-1VB1H103K PCC1784CT-ND R04003
Contextual Info: HELP3TM Tri-band USCellular/Japan Cellular/IMT UMTS/WCDMA Power Amplifier Module Application Note HELP3TM Tri-band WCDMA Power Amplifier Module Rev 2 Relevant products • AWT6222 General Description This ANADIGICS 3 mm x 5 mm hetero-junction bipolar transistor HBT power amplifier module is designed

99-F

Abstract: CHA5012-99F CHA5012
Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

TRANSISTOR 5804

Abstract: A 3120 2SC2798
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 0ni7fc,24 b32 2SC2798 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 2798 is a silicon NPN epitaxial planar type transistor designed fo r R F broad-band power amplifiers in U H F band. Dim ensions in mm C 1 .5 M A X

S1502

Abstract: SKY65152-11 sky65152
Contextual Info: DATA SHEET SKY65152-11: 2.4-2.5 GHz WLAN Power Amplifier Applications Description x IEEE 802.11 b/g WLANs x ISM band transmitters x WCS fixed wireless x Wireless access nodes The SKY65152-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity,

4419B

Abstract: C0805C225K9RACTU ECJ-1VB1H103K PCC1784CT-ND R04003 63Sn37Pb Sonoscan
Contextual Info: HELP3TM Dual-band Cellular/PCS WCDMA Power Amplifier Module Application Note HELP3TM Dual-band WCDMA Power Amplifier Module Rev 3 Relevant products • AWT6221 General Description This ANADIGICS 3 mm x 5 mm hetero-junction bipolar provide optimum performance in a 50 Ω system, and

D 400 F 6 F BIPOLAR TRANSISTOR

Abstract: 41000W TACAN ASI10574 AVF400
Contextual Info: AVF400 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI AVF400 is a NPN bipolar power transistor designed for high peak power applications such as DME/TACAN/IFF. In 1025-1150 MHz band. A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B

RF POWER TRANSISTOR NPN

Abstract: 2SC2627 2sc262 mitsubishi vcb sma 9s1 8-32UNC-3A
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2627 NPN EP ITA X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2627 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X

MSC81035M

Abstract: TACAN TACAN 41
Contextual Info: MSC81035M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. PACKAGE STYLE .250 2L FLG B A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES:

RF5355

Abstract: transistor c 5299 DATA
Contextual Info: RF5355 3.3 V, 5 GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2 mm x 2.2 mm x 0.45 mm Features „ „ „ „ „ Single Supply Voltage 3.0 V to 5.0 V No external matching components 28 dB Typical Gain Across Band POUT = 17 dBm @ <4% TYP EVM across Operating Band

S1377

Abstract: S708 Skyworks PA LTE
Contextual Info: PRELIMINARY DATA SHEET SKY65080-70LF: 1500-2500 MHz Low Noise Power Amplifier Driver Applications GND x UHF television 4 x TETRA radios x PCS, DCS, 2.5G, 3G handsets x ISM band transmitters x WCS fixed wireless x 802.16 WiMAX x 3GPP LTE Features x Wideband frequency range: 1500 to 2500 MHz

TPV695A

Contextual Info: TPV695A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV695A is a high gain PACKAGE STYLE .250 BAL FLG push-pull device Designed for high power, band IV & V Transposers and transmitter amplifiers Applications. A B .0 20 x 45 ° Ø .13 0 N O M . .0 50 x 45 °

2SC2086

Abstract: 50S5 transistor U4 NPN Silicon Epitaxial Planar Transistor to92 2sc2086 transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2086 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC2086 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES

Contextual Info: RF3225 RF3225QuadBand GMSK POLAR EDGE QUAD-BAND GMSK POLAR EDGE POWER AMP MODULE Package: Module, 5.00 mm x 5.00 mm x 1.00 mm Features  EDGE Large Signal Polar Modulation Compatible  Power Margin for Flexible Tuning  GSM850 Efficiency: 54%  EGSM900 Efficiency: 56%

500W TRANSISTOR

Abstract: HVV1011-500L 500W RF Transistor 1030 MHz
Contextual Info: HVV1011-500L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor

x-band microwave fet

Abstract: NEZ1011-2E 17148
Contextual Info: 2 W X-BAND INTERNALLY NEZ1011-2E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.5 dB TYP 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGE

AWT6282

Abstract: E4419B E9301H agilent HBT transistor series
Contextual Info: Application Note UMTS 1700/IMT/PCS 4 mm x 4 mm Power Amplifier Modules Rev 1 Relevant products • AWT6278 • AWT6279 • AWT6282 General Description The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed UMTS High Band, and operates from a single lithiumion (Li-ion) battery. The amplifier input and output

2SC2629

Abstract: 2sc262 vco 17.5mhz
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2629 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2629 is a silicon NPN epitaxial planar typ e transistor designed fo r RF power am plifiers in V H F band m obile radio applications. Dimensions in mm C 1 .5 M A X

AWT6241R

Abstract: AWT6241 E4419B E4438C J-STD-020B R04003
Contextual Info: HELP3TM UMTS/WCDMA Power Amplifier Module Application Note HELP3TM IMT/UMTS WCDMA Power Amplifier Module Rev 0 RELEVANT PRODUCTS • AWT6241R - IMT Band 1 GENERAL DESCRIPTION This ANADIGICS 3 mm x 3 mm hetero-junction bipolar transistor (HBT) power amplifier module is designed for UMTS/WCDMA handsets and datacards

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X

2sc2094

Abstract: transistor 2sc2094 PW150 15WPEP transistor rf vhf 2SC209
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EP ITA X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2094 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES

2SC1946

Abstract: transistor 2sc1946
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1946 NPN E P ITA X IA L PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC1946 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on VHF band mobile radio applications. Dimensions in mm FEATURES