WRITE PROTECT Search Results

HT93LC66

Abstract: HT93LC66-A
Contextual Info: HT93LC66 CMOS 4K 3-Wire Serial EEPROM Features • Operating voltage VCC · Automatic erase-before-write operation - Read: 2.0V~5.5V - Write: 2.4V~5.5V · Word/chip erase and write operation · Write operation with built-in timer · Low power consumption · Software controlled write protection

HT24LC32

Contextual Info: HT24LC32 CMOS 32K 2-Wire Serial EEPROM Features • Operating voltage: 2.4V~5.5V · 32-byte Page Write Mode · Low power consumption · Partial page write allowed - Operation: 5mA max. - Standby: 5mA max. · Hardware controlled write protection · Automatic erase-before-write operation

HT24LC32

Contextual Info: HT24LC32 CMOS 32K 2-Wire Serial EEPROM Features • Operating voltage: 2.4V~5.5V · 32-byte Page Write Mode · Low power consumption · Partial page write allowed - Operation: 5mA max. - Standby: 5mA max. · Hardware controlled write protection · Automatic erase-before-write operation

Contextual Info: HOLTEK r r HT93L C56 2K 3-Wire CMOS Serial EEPROM Features • • • • • Automatic erase-before-write operation Word/chip erase and write operation Write operation with built-in timer Software controlled write protection 10-year data retention after 100K rewrite

HT24LC64

Contextual Info: HT24LC64 CMOS 64K 2-Wire Serial EEPROM Features • Operating voltage: 2.4V~5.5V · 32-byte Page Write Mode · Low power consumption · Partial page write allowed - Operation: 5mA max. - Standby: 5mA max. · Hardware controlled write protection · Automatic erase-before-write operation

M28C64

Abstract: PDIP28 PLCC32
Contextual Info: M28C64 PARALLEL 64K 8K x 8 EEPROM WITH SOFTWARE DATA PROTECTION FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

c 335 16k

Abstract: HT24LC04 HT24LC16
Contextual Info: HT24LC16 CMOS 16K 2-Wire Serial EEPROM Features • Operating voltage: 2.2V~5.5V · Partial page write allowed · Low power consumption · 16-byte Page Write Mode - Operation: 5mA max. - Standby: 5mA max. · Write operation with built-in timer · Hardware controlled write protection

HT24LC02

Contextual Info: HT24LC02 CMOS 2K 2-Wire Serial EEPROM Features • Operating voltage: 2.2V~5.5V · Partial page write allowed · Low power consumption · 8-byte Page write modes - Operation: 5mA max. - Standby: 5mA max. · Write operation with built-in timer · Hardware controlled write protection

HT93LC86

Contextual Info: HT93LC86 CMOS 16K 3-Wire Serial EEPROM Features • Operating voltage: 2.2V~5.5V · Automatic erase-before-write operation · Low power consumption - Operating: 5mA max. · Word/chip erase and write operation - Standby: 10mA max. · Software controlled write protection

AT34C02

Abstract: AT34C02-10PC AT34C02-10PI AT34C02-10TC AT34C02-10TI AT34C02N-10SC AT34C02N-10SI
Contextual Info: Features • Permanent Software Write Protection for the First-half of the Array – Software Procedure to Verify Write Protect Status • Hardware Write Protection for the Entire Array • Low-voltage and Standard-voltage Operation • • • • • •

M48Z35

Abstract: M48Z35Y SOH28
Contextual Info: M48Z35 M48Z35Y 256 Kbit 32Kb x8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION ■ WRITE PROTECT VOLTAGES

AT34C02

Abstract: AT34C02-10PC AT34C02-10PI AT34C02-10TC AT34C02-10TI AT34C02N-10SC AT34C02N-10SI
Contextual Info: Features • Permanent Software Write Protection for the First-Half of the Array – Software Procedure to Verify Write Protect Status • Hardware Write Protection for the Entire Array • Low Voltage and Standard Voltage Operation • • • • • •

ATMLH

Abstract: AT34C02D-SSHM-T AT34C02D-CUM-T 34c02
Contextual Info: Atmel AT34C02D I2C-compatible 2-wire Serial EEPROM with Permanent and Reversible Software Write Protection 2K (256 x 8) DATASHEET Features  Permanent and reversible software write protection for the first-half of the array  Software procedure to verify write protect status

AT34C02

Abstract: MS-001
Contextual Info: Features • Permanent Software Write Protection for the First-half of the Array – Software Procedure to Verify Write Protect Status • Hardware Write Protection for the Entire Array • Low-voltage and Standard-voltage Operation • • • • • •

Contextual Info: M48Z35 M48Z35Y, M48Z35V 256 Kbit 32Kb x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION ■ WRITE PROTECT VOLTAGES

AT34C02B

Abstract: AT34C02C MO-229
Contextual Info: Features • Permanent and Reversible Software Write Protection for the First-half of the Array – Software Procedure to Verify Write Protect Status • Hardware Write Protection for the Entire Array • Low-voltage and Standard-voltage Operation – 1.7 VCC = 1.7V to 3.6V

Contextual Info: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection

Contextual Info: MR25H10 1Mb Serial SPI MRAM FEATURES • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate

M28C16A

Abstract: M28LV16 PDIP24 PLCC32 SO24
Contextual Info: M28LV16 16K 2K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max

MR25H10CDC

Abstract: mr25h10mdc MR25H10 AEC-Q100 dfn tray 5 mm x 6 mm
Contextual Info: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate

MR25H10C

Abstract: MR25H10MDF
Contextual Info: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate

AT34C02C

Abstract: AT34C02CN-SH-B AT34C02CN-SH-T AT34C02C-TH-B AT34C02C-TH-T AT34C02CY6-YH-T MO-229
Contextual Info: Features • Permanent and Reversible Software Write Protection for the First-half of the Array – Software Procedure to Verify Write Protect Status • Hardware Write Protection for the Entire Array • Low-voltage and Standard-voltage Operation – 1.7 VCC = 1.7V to 3.6V

02APR

Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:

DS1225

Abstract: M48Z08 M48Z18
Contextual Info: M48Z08 M48Z18 5V, 64 Kbit 8Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM and POWER-FAIL CONTROL CIRCUIT ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION