WP 3221 Search Results

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

Contextual Info: 24LC164 M ic r o c h ip 16K 2.5V Cascadable I2C Serial EEPROM FEATURES PACKAGETYPES • Single supply with operation down to 2.5V PDIP • Low power CMOS technology ao£ 1 A1 2 8 □ vcc 7 □ wp 6 □ S C L 4 5 □ S D A 1 8 - 1 mA active current typical

Contextual Info: R 15 Contents Page Technical characteristics R 15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.02 Inserts R 15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.03 Hoods/Housings R 15. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: Web Site: www.parallax.com Forums: forums.parallax.com Sales: sales@parallax.com Technical: support@parallax.com Office: 916 624-8333 Fax: (916) 624-8003 Sales: (888) 512-1024 Tech Support: (888) 997-8267 SD Card Adapter Kit (#32313) The SD Card Adapter Kit allows you to easily connect an SD Flash Memory Card to your PropellerTM chip

AN68173

Contextual Info: Migrating from Serial Peripheral Interface SPI FRAM to SPI nvSRAM AN68173 Author: Shivendra Singh Associated Project: No Associated Part Family: CY14xxxxPA, CY14xxxxQxA Software Version: N/A Associated Application Notes: None Application Note Abstract AN68173 application note describes the hardware/software changes needed at the system level to migrate from SPI FRAM to

Contextual Info: SIEMENS 2M X 32-Bit Dynamic RAM Module HYM 322160S/GS-60/-70 Advanced Information 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access time

Q67100-Q2014

Abstract: Q67100-Q2015 Q67100-Q2016 Q67100-Q2017 23d06
Contextual Info: SIEMENS 2M X 32-Bit Dynamic RAM Module HYM 322160S/GS-60/-70 Advanced Inform ation • 2 097 152 words by 32-Bit organization alternative 4 194 304 w ords by 16-Bit • Fast access and cycle tim e 60 ns access time 1 1 0 n s cycle time (-60 version) 70 ns access time

MCM32216S70

Abstract: MCM32T216SH70 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM32216/D SEMICONDUCTOR TECHNICAL DATA MCM32216 MCM32T216 2M x 32 Bit Dynamic Random Access Memory Module The MCM32 T 216 is a 64M dynamic random access memory (DRAM) module organized as 2,097,152 x 32 bits. The module is a 72–lead single sided

AT12L

Abstract: 3221-TSOP28 4915A IQL2 LC35256AM LC35256AT WE VQE 14 e AT-12LV at12lv WP 3221
Contextual Info: Ordering number : EN4915A CMOS LSI No. 4915A LC35256AM, AT-10LV/12LV/15LV 256K 32768 words x 8 bits SRAM with OE and CE Control Pins Overview The LC35256AM, AT-10LV/12LV/15LV are asynchro­ nous silicon-gate CMOS SRAMs with a 32K-word by 8-bit organization and a 6-transistor structure

Contextual Info: Ordering num ber : E N 4916A CMOS LSI LC35256A, AS, AM, AT-70/85/10 No. 4 916A 256K 32768 words x 8 bits SRAM with OE and CE Control Pins I Overview The LC35256A, AS, AM, and AT are 32768 words x 8-bits asynchronous silicon gate CMOS SRAMs. These products feature a 6-transistor full-CMOS memory cell,

B908

Contextual Info: TMS570LS31x/21x 16/32-Bit RISC Flash Microcontroller Technical Reference Manual Literature Number: SPNU499B November 2012 – Revised August 2013 Contents . 90

TVL320AIC33

Abstract: TH8200 VARTA 500 RST 3.5mm Stereo jack pinout female TVL320 RPACK8-33 RPACK4-33 infrared LED with MSP430 SFM-105-02-S-D-LC SFM-105-02-s-d
Contextual Info: TMS320DM355 Evaluation Module Technical Reference 2008 DSP Development Systems TMS320DM355 Evaluation Module Technical Reference 509905-0001 Rev. E April 2008 SPECTRUM DIGITAL, INC. 12502 Exchange Drive, Suite 440 Stafford, TX. 77477 Tel: 281.494.4505 Fax: 281.494.5310

Contextual Info: TMS320DM355 Evaluation Module Technical Reference 2008 DSP Development Systems TMS320DM355 Evaluation Module Technical Reference 509905-0001 Rev. E April 2008 SPECTRUM DIGITAL, INC. 12502 Exchange Drive, Suite 440 Stafford, TX. 77477 Tel: 281.494.4505 Fax: 281.494.5310

Contextual Info: MITSUBISHI MICROCOMPUTERS M37734E8BXXXFP M37734E8BFS PROM VERSION of M37734M8BXXXFP DESCRIPTION • S in g le power supply . 5 V + 10% The M37734E8BXXXFP is a single-chip microcomputer using the • L o w power dissipation at 25 MHz frequency

TP 3212 TRW

Abstract: MCM54400A 3206m L1AA 54400AN70 54400AN
Contextual Info: MO TO RO LA SEMICONDUCTOR TECHNICAL DATA 1M x 4 CMOS Dynamic RAM MCM54400A MCM5L4400A Fast Page Mode The MCM54400A is a 0.7|j CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS siiicon-gate process

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM54280B MCM5L4280B MCM5V4280B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The MCM54280B is a 0.6|i CMOS high-speed dynamic random access memory. It is organized as 262,144 eighteen-bit words and fabricated with CMOS silicon-gate

EMA8

Contextual Info: TMS320DM365 Evaluation Module Technical Reference y r a 9 n i il m , 20 e 4 r 1 P l i r p A 2009 DSP Development Systems TMS320DM365 Evaluation Module Technical Reference 510845-0001 Rev. A April 2009 SPECTRUM DIGITAL, INC. 12502 Exchange Drive, Suite 440 Stafford, TX. 77477

EMA8

Abstract: DM365
Contextual Info: TMS320DM365 Evaluation Module Technical Reference y r a 9 n i il m , 20 e 4 r 1 P l i r p A 2009 DSP Development Systems TMS320DM365 Evaluation Module Technical Reference 510845-0001 Rev. A April 2009 SPECTRUM DIGITAL, INC. 12502 Exchange Drive, Suite 440 Stafford, TX. 77477

dram zip

Contextual Info: PRELIMINARY U | | C n D N 256K X M T4C 16260/1 16 W ID E DRAM 256K X 16 DRAM WIDE DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process

MA6116

Abstract: t30 55 TMS 3617 31KT2MB0026 capacitor 100u 63V cpu c644 100v 27p PC97 quanta PCI 1520 quanta computer
Contextual Info: 5 4 3 2 PCB Rev: C D Sch ver : 20040514-1 KT2 BLOCK DIAGRAM 31KT2MB0026 PCB STACK UP LAYER 1 : TOP KT2 FF D PENTIUM-M / Montara-GM / ICH4-M LAYER 2 : GND LAYER 3 : IN1 CPU PENTIUM-M CPU THERMAL SENSOR GMT-781 LAYER 4 : IN2 14.318MHz SYSTEM POWER(1.2V/1.05V/1.25V)

C6198

Abstract: a17 c178 100v 12p quanta TMS 3617 CX20468-31 mtp42 cpu c644 100v 27p capacitor 100u 63V a70 4013 100 12p Quanta KT2
Contextual Info: 5 4 3 2 PCB Rev: A 1 Sch ver : 20040402_07 KT2 BLOCK DIAGRAM D PCB STACK UP LAYER 1 : TOP D PENTIUM-M / Montara-GM / ICH4-M LAYER 2 : GND LAYER 3 : IN1 CPU PENTIUM-M CPU THERMAL SENSOR LAYER 4 : IN2 GMT-781 478 Pins micro FC-PGA PAGE: 3 LAYER 5 : VCC 14.318MHz

MA6116

Abstract: KBC-NS87551L C37B 31KT2MB0018 ad30 c635 100v 10p quanta ACAD12 2522A diode dd 402 109 bn2 scan 100 27p
Contextual Info: 5 4 3 2 PCB Rev: C D Sch ver : 20040514-1 KT2 BLOCK DIAGRAM 31KT2MB0018 PCB STACK UP LAYER 1 : TOP KT2 APJ D PENTIUM-M / Montara-GM / ICH4-M LAYER 2 : GND LAYER 3 : IN1 CPU PENTIUM-M CPU THERMAL SENSOR GMT-781 LAYER 4 : IN2 14.318MHz SYSTEM POWER(1.2V/1.05V/1.25V)

pic16f1823 usart c code

Abstract: PIC18f4550 assembly programming PWM PIC16F1827 example codes C PIC18F26j11 PIC18F67K22 PIC16F1823 PIC24FJ64GB004 PIC18F45k20 examples PIC18F45J11 microchip pic18 spi dma example
Contextual Info: Automotive Recommended Product Selector Guide June 2010 Automotive Recommended Product Selector Guide Featuring: 8- and 16-bit PIC Microcontrollers dsPIC® Digital Signal Controllers Analog & Interface Products Serial EEPROMs www.microchip.com/automotive

Contextual Info: Ordering number : EN4915A CMOS LSI LC35256AM, AT-10LV/12LV/15LV No. 4915A 256K 32768 words x 8 bits SRAM with OE and CE Control Pins Overview The LC35256AM, AT-10LV/12LV/15LV are asynchro­ nous silicon-gate CMOS SRAMs with a 32K-word by 8-b it organization and a 6-tran sisto r structure