WL4 550 Search Results

Contextual Info: Hebei I.T. Shanghai Co., Ltd. SPECIFICATION SS1 2N8W3C Part No.： Features： z High radiometric power per LED z Very long operating life (up to 100K hours) z Low voltage DC operated z More Energy Efficient than Incandescent and most Halogen lamps z Good color uniformity

Contextual Info: Hebei I.T. Shanghai Co., Ltd. SPECIFICATION Part No.： 4V AC1 3CW3 Features： z High radiometric power per LED z Very long operating life (up to 100K hours) z Low voltage DC operated z More Energy Efficient than Incandescent and most Halogen lamps z Good color uniformity

SG15N7W3-50mA

Contextual Info: Hebei I.T. Shanghai Co., Ltd SPECIFICATION Part No ：SG15N7W3-50mA Features： z High radiometric power per LED z Very long operating life sunpu (up to 100K hours) + + z Low voltage DC operated - - z More Energy Efficient than Incandescent and most Halogen lamps

SR12N3W3C

Contextual Info: Hebei I.T. Shanghai Co., Ltd. SPECIFICATION Part No.： SR12N3W3C Features： z High radiometric power per LED z Very long operating life (up to 100K hours) sunpu + + z Low voltage DC operated z More Energy Efficient than Incandescent and most Halogen lamps

Contextual Info: Hebei I.T. Shanghai Co., Ltd. SPECIFICATION Part No.： 10V AC30DW3 Features： z High radiometric power per LED z Very long operating life (up to 100K hours) z Low voltage DC operated + pu sun z More Energy Efficient than Incandescent and most Halogen lamps

WF-4

Contextual Info: Hebei I.T. Shanghai Co., Ltd. SPECIFICATION SS1 2N7W3C Part No.： Features： z High radiometric power per LED z Very long operating life sunpu (up to 100K hours) + z Low voltage DC operated z More Energy Efficient than Incandescent and most Halogen lamps

marking wl3

Abstract: marking code WL3 diode 4 pin marking code WL3 WL3 marking MD218B MD218 11-md218b WL4 MARKING DIODE DFN10 DFN-10
Contextual Info: 11-MD218B Version Issue Date File Name Total Page : A.003 : 2009-02-10 : SP-MD218B-A.003.doc : 17 130mA, 10Bit Current Sinking VCM Driver with I2C Interface 新竹市展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-4F-3, Prosperity Rd I, Science-Based Industrial Park

MD218

Abstract: md218a MD218B autofocus IC Auto-Focus DFN10 DFN-10 autofocus wl3 diode
Contextual Info: 11-MD218A Version Issue Date File Name Total Page : A.001 : 2008-04-14 : SP-MD218A-A.001.doc : 17 130mA, 10Bit Current Sinking VCM Driver with I2C Interface 新竹市展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-4F-3, Prosperity Rd I, Science-Based Industrial Park

sot143 Marking code wl4

Abstract: WL4 SOT143 1K resistor Type MHP A 002 52 05 welwyn MHP 40101-019 SQM5 thermistor PCR 406 marking 16 sot143 planar Resistor BPC
Contextual Info: Fixed Resistors Product Data Short Form Belief in Technology 1 Fixed Resistors TT electronics plc is a global electronics company. Within its electronic components group are multiple manufacturing facilities for fixed resistors and dedicated engineering teams providing custom solutions.

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC521OOOP/J 1MBit 256K X 4 Field Memory PRELIMINARY DESCRIPTION The TC521000P/J is a CMOS 1Mbit Field Memory organized as 256K words by 4 bits, and features separate inputs/outputs, each equipped with an 8 bit serial shift register (32K

TC521000P

Abstract: ysm-c
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC521000P/J 1M B i t 256K X 4 Field M e m o r y PRELIMINARY :D E S C R I P T I O N The TC521000P/J is a CMOS lMbi t Field Memory organized as 256K words by 4 bits, and features separate inputs/outputs, e ach equipped with an 8 bit serial shift register (32K

hyb514

Abstract: 514400 Q67100-Q973 HYB514400B
Contextual Info: 1Mx4-Bit Dynamic RAM Low Power 1Mx4-Bit Dynamic RAM HYB514400BJ/BJL -50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 -70 tRAC RAS access time

Q67100-Q1104

Abstract: Q67100-Q1105 Q67100-Q1106
Contextual Info: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time

Contextual Info: Panasonic Chip Inductors Japan Singapore Chip Inductors GE * S e r ie s C h ip Type: III RE, ND, NC, NA, FD, FC, FA, SA, FB, PC, PA, Type RE Size 1608 Type D D (Size 2012) c o y c s a Type D C (Size 2520) Type D A (Size 3225) Type D B (Size 4532) b i t t z t t & L t z i m m } (r e )

5117400

Abstract: fast page mode dram controller HYB5117400BJ HYB5117400BT
Contextual Info: 4M x 4-Bit Dynamic RAM HYB5117400BJ -50/-60/-70 HYB5117400BT -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time

WL4 550

Abstract: Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 SOJ-28
Contextual Info: 2M x 8-Bit Dynamic RAM 2k-Refresh HYB 5117800BSJ-50/-60/-70 Advanced Information • • • • • • • • • • • 2 097 152 words by 8-bit organization 0 to 70 ˚C operating temperature Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC

HYB5117400BJ

Abstract: HYB5117400BT hyb5117400
Contextual Info: 4M x 4-Bit Dynamic RAM HYB5117400BJ -50/-60/-70 HYB5117400BT -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time

5116 ram

Abstract: Q67100-Q1107 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-50 HYB5118165BSJ-60 HYB5118165BSJ-70
Contextual Info: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature

HYB5116400BJ

Abstract: HYB5116400BT
Contextual Info: 4M x 4-Bit Dynamic RAM HYB5116400BJ -50/-60/-70 HYB5116400BT -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time

5116 ram

Abstract: HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70
Contextual Info: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature

5117405

Abstract: smd code Wl3 5117405BJ-60
Contextual Info: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature

5117405

Contextual Info: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature

Q67100-Q1092

Abstract: Q67100-Q1093 Q67100-Q1094 WL10
Contextual Info: 2M x 8-Bit Dynamic RAM HYB5117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20 ns tAA Access time from address

E1354E

Contextual Info: PRELIMINARY DATA SHEET 4G bits DDR2 Mobile RAM EDB4432BABH 128M words x 32 bits Specifications Features • Density: 4G bits • Organization: 16M words × 32 bits × 8 banks • Package: 134-ball FBGA — Package size: 11.5mm × 11.5mm — Ball pitch: 0.65mm