WE VQE 24 Search Results

Contextual Info: PD - 9.1583A International I R Rectifier IR G 4 P C 5 0 K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tSc =1 Ops, @ 360V VCE Start , Tj = 125°C,

WE VQE 24 E

Abstract: WE VQE 11 E WE VQE 24
Contextual Info: International IGR Rectifier PD - 9.1578 IRG4PH40K PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSUIATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tgc =10 js, 0 36 0V VCE (start , T j = 125°C, VSE = 15V

Contextual Info: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C,

WE VQE 23 F

Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
Contextual Info: International IöR Rectifier PD - 9.1619A 1RG4BC30K-S PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10MS, @360V VCE start , T j = 125°C,

Contextual Info: 2 International I R Rectifier PD - 9.1578A IRG4PH40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, t*. =10ps, VCC = 720V , T j = 125°C, VGe =15V • Combines low conduction losses with high

BUK856-400IZ

Abstract: DD30 T0220AB ignition coil IGBT CL-8A
Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 0030^05 S3T H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA

Contextual Info: PD - 9.1576 International IOR Rectifier IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, ts C = 1 0 |J S , Vcc = 720V , T j = 125°C, V q e = 15V • Combines low conduction losses with high

Transistor BC 227

Contextual Info: PD-9.1620 International I R Rectifier IRG4 BC 2 0 K-S prelim inary Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =1 Ops, @360V VCE start , T j = 125°C, V ge = 15V

transistor iqr

Contextual Info: International IGR Recti fi'ier PD - 9.1600 IRG4BC20K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tjc =10|js, @360V VCE start , T j = 125°C, VGE= 15V

OCT6100

Abstract: mf 672 WE VQE 24 E G-169 manual for mcf10p-128ms
Contextual Info: O OC C T 6 1 0 0 SS ee rr ii ee ss Voice Quality/Echo Cancellation Increasing system density while improving voice quality The OCT6100 Series family of voice processors performs high quality echo cancellation and Voice Features • 128-672 channel G.168-2002 echo canceller

Contextual Info: PD - 9.1600 International I R Rectifyler IRG4BC20K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc = 1 0 jjs, @ 360V V CE start , T j= 1 2 5 ° C ,

ECJF

Contextual Info: International IOR Rectifier P D - 9.1602 IRG4BC20F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

CM100DY-24E

Abstract: TIC 103 prx module diode B4E BP107 E-49
Contextual Info: b4E D • VST+bSl ODDfc.732 b 22 « P R X CM100DY-24E Powerex, inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 pouerex in c CM100DY-24E Dual IGBTMOD E-Series Module

Contextual Info: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:

70l12

Contextual Info: 0M120L60SB Preliminary Data Sheet OMIOOF6OSB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES OM90L120SB QM70F120SB High Current, High Voltage 600V And 1200V, Up To 150 Amp IGBTs With FRED Diodes FEATURES Includes Internal FRED Diode Rugged Package Design Solder Terminals

Contextual Info: PD -91776 International I R Rectifier IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C, V qe = 15V • Combines low conduction losses with high

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

Contextual Info: REVISIONS m ulticom p A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. S PC-F005.DW G DCP # REV DESCRIPTION pow er lin e a r and s w itch in g SF 02/ 0 3/0 6

SBAA094

Abstract: sinc3 vhdl code iir filter in vhdl pulse shaping FILTER implementation xilinx xilinx code fir filter in vhdl VHDL for decimation filter digital filter sinc filter xilinx FPGA IIR Filter it is possible to summarize the results for a Sinc3 filter and sinc3
Contextual Info: Application Report SBAA094 – June 2003 Combining the ADS1202 with an FPGA Digital Filter for Current Measurement in Motor Control Applications Miroslav Oljaca, Tom Hendrick Data Acquisition Products ABSTRACT The ADS1202 is a precision, 80dB dynamic range, delta-sigma ∆Σ modulator operating

tnetv3010

Abstract: TNETV WE VQE 11 E WE VQE 24 E echo cancellation amr ss7 gsm TMS320C55X watt CALEA
Contextual Info: R E A L W O R L D S Product Bulletin Telogy Software Products Integrated with TI’s DSP-Based Access Communication Processor Industry-Leading Silicon Architecture The TNETV3010 has six fixedpoint DSP cores based upon TI’s TMS320C55x DSP see figure

OCT6100

Abstract: OCT8304 OCT9320 OCT9400 OCT9600 adaptive noise cancellation "internet telephony server" voip echo sound processors OCT6100 and music protection feature
Contextual Info: 16-672 Channel G.168-2002 Echo Canceller o 128 ms tail/channel on all channel densities o Audio Conferencing o Extensive Signaling Tone Detection/Generation The OCT6100 Series Superior Voice Quality lead-free option, the Octasic’s OCT6100 Series of voice processors supports densities from 16 to 672 channels on a single

npn phototransistor sfh 309

Abstract: 3094 npn SFH 309 SFH 309-3/4
Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 309 SFH 309 FA Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1180 nm

Contextual Info: Si GEC PLESS EY SEMICONDUCTORS DS4137-6.2 GP400LSS12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS • High P ow er Switching. ■ M otor Control. TYPICAL KEY PARAMETERS VCES 1200V V c E ,a„ ^c(cont> ■ U P S. ■ A C And D C Servo Drive Amplifiers. 'c p k ,

Contextual Info: 4K Military X2804AM 512x8 Bit _ Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data