WE VQE 11 E Search Results

Contextual Info: PD - 9.1576 International IOR Rectifier IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, ts C = 1 0 |J S , Vcc = 720V , T j = 125°C, V q e = 15V • Combines low conduction losses with high

Contextual Info: PD - 9.1600 International I R Rectifyler IRG4BC20K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc = 1 0 jjs, @ 360V V CE start , T j= 1 2 5 ° C ,

Contextual Info: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C,

WE VQE 23 F

Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
Contextual Info: International IöR Rectifier PD - 9.1619A 1RG4BC30K-S PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10MS, @360V VCE start , T j = 125°C,

irg4pc50k

Abstract: irg4pc50kv irgpc50m
Contextual Info: International TOR Rectifier PD - 9.1583A IRG4PC50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10[is, @ 360V VCE start , T j = 125°C, V g e =15V

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

transistor iqr

Contextual Info: International IGR Recti fi'ier PD - 9.1600 IRG4BC20K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tjc =10|js, @360V VCE start , T j = 125°C, VGE= 15V

MG25N2YS1

Abstract: WE VQE 23 F
Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG25N2YS1 HI GH POWER S WI T C H I N G AP PL IC ATIONS. H OT O R CONT R OL A P P L I CA TI ON S . FEATURES: . High I n p u t Im p eda nc e . High Speed . . . . : t f = 1 . Oys Ma x. t r r = 0. 5jLis(Max.) Low S a t u r a t i o n V o l t a g e : Vq e ( s a t ) = 5 • o v (‘M ax•)

ECJF

Contextual Info: International IOR Rectifier P D - 9.1602 IRG4BC20F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Buf725d

Abstract: transistor BUF725D
Contextual Info: T e m ic BUF725D Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • • Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate

Contextual Info: PD -91776 International I R Rectifier IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C, V qe = 15V • Combines low conduction losses with high

X2816B

Abstract: X2816BM X2816BMB WE VQE 11 E X2816BM-25
Contextual Info: JÜHK PR ELIM IN A R Y IN FO R M A TIO N 16K Military X2816BM 2 0 4 8 x 8 Bit Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical

FAIRCHILD 3904

Contextual Info: O ctober 1987 Revised Ja nuary 1999 SEMICONDUCTOR!!^ MM74C912 6-Digit BCD Display Controller/Driver General Description T h e M M 74C 912 display controllers are interface elem ents, w ith m emory, th a t drive a 6-digit, 8-segm ent LED display. The display controllers receive data inform ation through 5

AT-10

Abstract: LC35256A LC35256AM LC35256AS LC35256AT
Contextual Info: Ordering number : EN4916A CMOS LSI LC35256A, AS, AM, AT-70/85/10 No 4916A SAmYO i 256K 32768 words x 8 bits SRAM with OE and CE Control Pins Overview • 28 -pin T S O P (8 x 13.4mm) p lastic packag e: L C 3 5 2 5 6 A T T h e L C 3 5 2 5 6 A , A S , A M , a n d A T a re 3 2 7 6 8 w o r d s x

1.8 degree bipolar stepper motor

Contextual Info: High Performance Dual PWM Microstepping Controller Type Package Temperature Range IXMS150 PSI 24-Pin Skinny DIP -40°C to +85°C racy, the IXMS150 will allow a designer to implement a control system with a resolution in excess of 250 microsteps per step, or 50,000 steps per revolution

Contextual Info: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .

RCD snubber

Abstract: calculation of IGBT snubber IGBT snubber for inductive load RC VOLTAGE CLAMP snubber circuit chokhawala carroll snubber design tool snubber resistance of IGBT IGBT snubber RCD snubber for igbt 150a gto in electronic rcd snubber
Contextual Info: Snubber C onsiderations for IG BT A pplications Yi Zhang, Saed Sobhani, Rahul Chokhawala International Rectifier Corporation Applications Engineering 233 Kansas St., El Segundo, CA 90245 Abstract: Snubber circuits can be used to protect fast switching IGBTs from the turn-on and turn-off voltage

MJ10100

Abstract: MJ1002 RBSOA mj1010 AN-861 MJ10021
Contextual Info: AN-861 M O TO R O LA Semiconductor Products Inc. Application Note POWER TRANSISTOR SAFE OPERATING AREA — SPECIAL CONSIDERATIONS FOR MOTOR DRIVES Prepared by W a r re n S c h u ltz A p p lic a tio n s E n g in e e rin g M o t o r d rives p resent a u n iq u e set o f safe op erating area

information applikation

Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
Contextual Info: m o G ^ ^ e le l^ t e n o r iîl-i Information Applikation i m f l k F a i ° o l B l H t 3 n a r Information Applikation HEFT =41 MOS-Speicher 3 - E PROM v o b h a lb le it o r w r f c f r a n k f u r c / o d a r im v b ko m b in at m jkro a W tt r onMi KAMMER DER TECHNIK

RCD snubber

Abstract: calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit
Contextual Info: Switching Voltage Transient Protection Schemes For High Current IGBT Modules Rahul Chokhawaia, Saed Sobhani International Rectifier Corporation Applications Engineering 233 Kansas St., El Segundo, CA 90245 A bstract: The emergence o f high current an d fa ster

Contextual Info: HIP6018B Data Sheet Advanced PWM and Dual Linear Power Control The HIP6018B provides the power control and protection for three output voltages in high-performance microprocessor and computer applications. The IC integrates a PWM controllers, a linear regulator and a linear controller as well

phonograph preamplifiers

Abstract: differential pair cascode darlington fua 3046 dc uA3045 MA3026 MONOLITHIC DIODE ARRAYS fairchild uA3046 darlington pair transistor cd 3054 LA3026
Contextual Info: |jA3018 •MA3018A. [i A3019 •mA3026 •mA3036 MA3039 • JA3045 •mA3046 •mA3054 •mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D L IN E A R IN T E G R A T E D C IR C U IT S G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode A rrays consist o f general purpose integrated circuit devices constructed

B083D

Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Contextual Info: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t