WA SOT23 Search Results

AS1910

Abstract: AS1912 AS1913 AS1915 AS19xx-W 2313V
Contextual Info: AS1910 - AS1915 D a ta S he e t D u a l - Vo l ta g e M i c r o p r o c e s s o r S u p e r v i s o r y C i r c u i ts w i t h M a n u a l R e s e t a n d Wa t c h d o g 1 General Description 2 Key Features The AS1910 - AS1915 microprocessor supervisory circuits were designed to generate a reset when one of the

Contextual Info: BAW56 / BAV70 / BAV99 / BAL99 SURFACE MOUNT SWITCHING DIODES 100 Volts POWER SOT-23 250mWatts Unit：inch mm • Fast switching speed. 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Surface mount package Ideally Suited for Automatic insertion • Electrically Identical to Standard JEDEC

Contextual Info: BAW56-AU / BAV70-AU / BAV99-AU / BAL99-AU SURFACE MOUNT SWITCHING DIODES VOLTAGE 100 Volts POWER SOT-23 250mWatts Unit：inch mm FEATURES • Fast switching speed. 0.120(3.04) 0.110(2.80) • Surface mount package Ideally Suited for Automatic insertion • Electrically Identical to Standard JEDEC

SLUV2.8

Abstract: STF201 LC01-6 LC03-6 LCDA15C-8
Contextual Info: • • • • • Semtech proprietary low voltage EPD TVS technology Low Operating Voltage 2.8V Low Capacitance (5pFTypical) & Leakage Current (<1mA) Ideal for 10/100BT Ethernet Applications LAN State-of-the-art ICs Require State-of-the-art Protection

smd diode BAT43

Abstract: DSAIH0002561
Contextual Info: Schottky Diode SOT-23 Plastic SMD Applications "ET y Excellent MOS protection. Efficient portable system battery isolator. Used in small fast motor applications such as CD ROMs and hard disk drives. SOT-23 PACKAGE OUTLINE Features • • • • • all dimensions in milimeters

DK 29 S

Abstract: XZMDKSGK48M
Contextual Info: SOT-23 SURFACE MOUNT LED LAMP SUN LED Email : sales@us.sunled.com Web Site : www.sunled.com XZMDKSGK48M Notes: 1. All dimensions are in millimeters inches . 2. Tolerance is ± 0.25(0.01") unless otherwise noted. Ab s o l u t e m a x i m u m r a t i n g s

Zener diode wz 210

Abstract: BZX84 Marking W3 Zener diode wz 130 zener y11 wu zener y11 Y6 ZENER DIODE BZX84C2V4-BZX84C51 Z3 DIODE BZX84B24 BZX84B
Contextual Info: MCC TM Micro Commercial Components BZX84C2V4 THRU BZX84C B 51
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Silicon Features Planar Die construction 350 mWatt 350mW Power Dissipation Zener Voltages from 2.4V - 51V

SOT-23 IP

Abstract: 801-2 AVX TVS TVS 400 suppressor 5v vlsi cmos circuitry TVS in SOT-23 02 SOT-23 IEC-801-2 Sc 6200 equivalent
Contextual Info: TECHNICAL INFORMATION AVX STATICGUARD PERFORMANCE COMPARISON TO SOT-23 SMT DIODES Ron Demcko Application Engineering Manager AVX Corporation Raleigh, NC Abstract: AVX StaticGuard is designed to provide transient protection for MSI to VLSI CMOS circuitry. This article

smd a6t double diode

Abstract: DIODE SMD A6t smd a6t smd diode a6t 14 A6t smd smd diode a6t
Contextual Info: Diodes SMD Type Surface Mount Switching Diode KAS16 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 ●High Conductance 0.55 ●For General Purpose Switching Applications +0.1 1.3-0.1 +0.1 2.4-0.1 ●Fast Switching Speed 0.4 3 • Features 2 +0.1 0.95-0.1 +0.1

A6t 13 sot

Contextual Info: Product specification KAS16 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 ●High Conductance 0.55 ●For General Purpose Switching Applications +0.1 1.3-0.1 +0.1 2.4-0.1 ●Fast Switching Speed 0.4 3 • Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

a13 marking sot23

Abstract: MMBD1503 MARKING 720 SOT23
Contextual Info: MCC MMBD1501 A THRU MMBD1505(A)
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features High Conductance l Low Leakage l Surface Mount Package Ideally Suited for Automatic Insertion Low Leakage Diode

Contextual Info: MCC MMBD1401 MMBD1403 MMBD1404 MMBD1405
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components  HDWXUHV • • x Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1

BZX84C2V4

Abstract: BZX84C2V7 BZX84C3 BZX84C3V3 BZX84C3V6 BZX84C3V9 BZX84C4V3 BZX84C12 Marking WI BZX84C6V8 BZX84C8V2
Contextual Info: BZX84C2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4~75V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

MIC834

Abstract: 12F-10 MIC2755 MIC5205 MIC5245 MIC833 li-ionpowered
Contextual Info: MIC2755 The World’s First Battery System Supervisor The MIC2755 is an 8-pin system management IC for battery operated portable systems. It detects and reports up to three battery states, provides power-on reset and manual reset capability, and controls the system’s power

BZT52C5V1-V

Abstract: BZT52C43V
Contextual Info: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power zener diodes • These diodes are also available in other case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener

Contextual Info: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power zener diodes • These diodes are also available in other case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener

MARKING X4 SOT23

Contextual Info: BZX84-C2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 410 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) • Zener Voltages from 2.4~75V .103(2.60) • Ideally Suited for Automated Assembly Processes .047(1.20) .056(1.40)

2N4856

Abstract: 2N4858 equivalent 2N4856 SILICONIX 2N466
Contextual Info: SILICÔNIX INC 1ÖE D • 02547 35 GG13Ö3S b ■ 2N4856 SERIES - JANTX, JANTXV in c o rp o ra te d N-Channel JFET T-3.S-2.5 The 2N4856 Series Is an all-purpose JFET analog switch which offers low on-resistance, isolation and very fast switching*. V g s OFF

SOT23 Zener diode WD

Abstract: SOT23 WU wT 3 sot23 ZENER diode wg SOT-23 BZX84C39 MARKING WB SOT-23 BZX84C12 Marking WI BZX84C3V6 marking WX SOT23 BZX84C2V4
Contextual Info: WTE POWER SEMICONDUCTORS BZX84C2V4 – BZX84C39 350mW SURFACE MOUNT ZENER DIODE Features ! Planar Die Construction L ! ! ! ! ! 350mW Power Dissipation 2.4 – 39V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application B Plastic Material – UL Recognition Flammability

VC06AG18120YAT

Abstract: AVX 0603 CHIP RESISTOR VC06AG18120
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

VC06AG18120

Abstract: 0603 3pf capacitor VC06AG18120YAT ceramic capacitor footprint 0402 dimensions Capacitor ceramic 0402 0.2 pf variable resistor varistor documentation Passive filters used in wireless lans 1B SOT23 VC06AG183R0YAT transistor LN 1B
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

Zener diode wz 130

Abstract: BZX84C2V4-BZX84C51 marking y4 sot-23
Contextual Info: MCC TM Micro Commercial Components BZX84C2V4 THRU BZX84C51
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Silicon Features Planar Die construction 350 mWatt 350mW Power Dissipation Zener Voltages from 2.4V - 51V

Contextual Info: BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES 0.120 3.04 • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.110(2.80) • Advanced Trench Process Technology 0.006(0.15)MIN. • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω