W332 Search Results

A104

Abstract: A108 A113 W332M64V-XBX W332M72V-XBX W3E32M64S-XBX W3E32M72S-XBX Qual 0004x
Contextual Info: W332M64V-XBX W332M72V-XBX W3E32M64S-XBX W3E32M72S-XBX White Electronic Designs 256MB SDRAM and DDR PBGA MULTI-CHIP PACKAGE CONSTRUCTION ORGANIZATIONS BALLS „ 32M x 64 SDRAM „ Eutectic solder Sn63/Pb37 „ 32M x 72 SDRAM „ Diameter = 0.762mm 0.030 Nominal

Contextual Info: W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM with

W333

Abstract: W332
Contextual Info: SAW Filters TMX W332 Low Loss SAW Bandpass Filter - WIRELESS AUDIO - RF Specification Rev-3 Technical overview .P01 Matching Network Configuration .P01

W332M64V-XBX

Abstract: WEDPN16M64V-XBX WEDPN4M64V-XBX WEDPN8M64V-XBX
Contextual Info: White Electronic Designs W332M64V-XBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing

JESD22

Abstract: SN63 PB37 A104 A108 A113 W332M64V-XSBX
Contextual Info: W332M64V-XSBX Application Note W332M64V-XSBX PACKAGE CONSTRUCTION + QUALIFICATION ENCAPSULANT TEST Thickness around die = 0.015 to 0.020 typical The encapsulant is not injection molded to control wire sweep effects Burn-In – 100%-48 hours at 125°C Final Electrical Test – 100% at maximum and

W332M72V-XSBX

Contextual Info: White Electronic Designs W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing

Contextual Info: W332M72V-XBX White Electronic Designs 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a

Contextual Info: White Electronic Designs W332M72V-XBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a

Contextual Info: White Electronic Designs W332M64V-XSBX ADVANCED* 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 208 Plastic Ball Grid Array PBGA , 13 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing

Contextual Info: White Electronic Designs W332M64V-XSBX PRELIMINARY* 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 208 Plastic Ball Grid Array PBGA , 13 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing

W332M64V-XBX

Abstract: WEDPN16M64V-XBX WEDPN4M64V-XBX WEDPN8M64V-XBX
Contextual Info: White Electronic Designs W332M64V-XBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing

Contextual Info: W332M64V-XSBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM with

BGA PACKAGE thermal resistance

Abstract: W332M64V-XSBX PDQ22
Contextual Info: White Electronic Designs W332M64V-XSBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 13 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing

Contextual Info: White Electronic Designs W332M72V-XBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing

W332M72V-XBX

Abstract: WEDPN16M72V-XB2X WEDPN4M72V-XB2X WEDPN8M72V-XB2X
Contextual Info: White Electronic Designs W332M72V-XBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a

w332

Contextual Info: SAW Filters TMX W332 Low Loss SAW Bandpass Filter - WIRELESS AUDIO - RF Specification Rev-2 Technical overview .P01 Matching Network Configuration .P01

W332M72-ESSB

Contextual Info: White Electronic Designs W332M72V-XSBX ADVANCED* 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing

Contextual Info: White Electronic Designs W332M72V-XSBX PRELIMINARY* 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing

diode A2-9

Abstract: W332M72V-XSBX
Contextual Info: White Electronic Designs W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing

W332M72V-XSBX

Contextual Info: White Electronic Designs W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing

Contextual Info: W332M64V-XBX 32Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM with

Contextual Info: W332M72V-XBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM with

KNC 201 15

Abstract: KNC 201 35 KNC 201 KNC 201 11 C9014 knc 201 39 c9014 ca 08 C9024 f827 w112r
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

C9014

Abstract: C9024 w849 w745 F312 stk 0177 transistor c9014 a006 DGL-04 C9014 transistor datasheet
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid