W16 O4 Search Results

C2512

Abstract: SMD DIODE A13 7C251 smd diode code a8 C2514 smd diode code A13 CY7C251 CY7C254 CY7C251-55 C25-12
Contextual Info: CY7C251 CY7C254 Features A9 1 28 VCC A8 2 27 A10 A7 3 26 A11 A6 4 25 A12 A5 5 24 A13 A4 6 23 CS1 A3 7 22 CS2 A2 8 21 CS3 A1 9 7C254 20 CS4 A0 10 19 O7 O0 11 18 O6 O1 12 17 O5 O2 13 16 O4 GND 14 15 O3 A12 512 x 256 X O5 A8 A7 A6 O4 ADDRESS DECODER A4 O3 A3

CY27C256A-45WMB

Abstract: w16 06 CY27C256A-45JC CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45ZC CY27C256A-55JC CY27C256A-70WC CY27C256A-90JC
Contextual Info: fax id: 3026 CY27C256A 1-Megabit 32K x 8 CMOS EPROM Features • • • • • • windowed packages (28-pin hermetic DIP and 32-pin LCC) which allow the device to be erased with UV light for 100% reprogrammability. Very fast read access time: (45−200 ns)

CY27C256A-45JC

Abstract: CY27C256A-45PC CY27C256A-45QMB CY27C256A-45WC CY27C256A-45WMB CY27C256A-45ZC CY27C256A-55JC
Contextual Info: fax id: 3026 1CY 27C2 56 A CY27C256A 32K x 8 CMOS EPROM Features • • • • • • windowed packages 28-pin hermetic DIP and 32-pin LCC which allow the device to be erased with UV light for 100% reprogrammability. Very fast read access time: (45−200 ns)

Delta W16

Abstract: 27C128 C128 CY27C128 27C128-45
Contextual Info: CY27C128 128K 16K x 8ĆBit CMOS EPROM CY27C128 automatically powers down into a lowĆpower standĆby mode. The CY27C128 is packaged in the industry standard 600Ćmil DIP and LCC packages. military) The CY27C128 is also available in a CerĆ D Low power DIP package equipped with an erasure

27C128

Abstract: 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 CY27C128 c1281
Contextual Info: fax id: 3011 1CY 27C1 28 CY27C128 128K 16K x 8-Bit CMOS EPROM Features CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.

C5121

Abstract: C5127 C512 CY27C512 CY27C512-45JC CY27C512-45PC CY27C512-45QMB CY27C512-45WC CY27C512-45WMB CY27C512-45ZC
Contextual Info: fax id: 3019 1CY 27C5 12 CY27C512 64K x 8 CMOS EPROM Features • • • • • • Very Fast Read Access Time: 45 - 200 ns 5V ± 10% Power Supply Capable of withstanding >2001V ESD Latch-up Protection up to 200mA Two line control functions to prevent bus contention

Contextual Info: CY27C128 '0 C Y PR ESS 128K 16K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns (commercial and military) • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected • ±10% Power supply tolerance

Contextual Info: fax id: 3026 1-Megabit 32K x 8 CMOS EPROM Features • • • • • • Very fast read access time: (45-200 ns) 5V ± 10% power supply Capable of withstanding >2001V ESD Latch-up protection up to 200 mA Two line control functions to prevent bus contention

CY27C256

Contextual Info: fax id: 3013 p yXpX : v « *1 CY27C256 - 32K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light,

CY27C256

Abstract: 27C256-70 27C256 27C256-200 27C256-45 27C256 UV 27C256-150 27c256120
Contextual Info: fax id: 3013 1CY 27C2 56 CY27C256 32K x 8-Bit CMOS EPROM Features able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and

W16 sot 23

Abstract: 27C128-200 sot 23 W16 27C128 CY27C128
Contextual Info: CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected • ±10% Power supply tolerance Functional Description

27C256-200

Abstract: CY27C256 27C256 27C256-45 27C256-70 27C256-150 27c256 cypress 27C256200 eprom 27c256 28 PIN DIP 150 NS
Contextual Info: CY27C256 32K x 8ĆBit CMOS EPROM into a lowĆpower standĆby mode. The and low current requirements allow for CY27C256 is packaged in the industry gang programming. The EPROM cells alĆ standard 600Ćmil DIP, PLCC, and TSOP low each memory location to be tested

Contextual Info: ^ s b b b b b b ? ¿s* rszgggfjKr CY27C512 r r ^ 'n p n n L> 1 1 i l l L o O 64K x 8 CMOS EPROM Features • • • • • • Very Fast Read Access Time: 45 - 200 ns 5V ± 10% Power Supply Capable of withstanding >2001V ESD Latch-up Protection up to 200mA

Contextual Info: CY27C256 y CYPRESS 32K x 8-Bit CMOS EPROM into a low-power stand-by mode. The CY27C256 is packaged in the industry standard 600-mil DIP, PLCC, and TSO P packages. T he CY27C256 is also available in a C erD IP package equipped with an erasure window to provide for reprogram ­

27C256-200

Abstract: 27C256 27C256-2 27C256-45 27C256-70 CY27C256 27C256-55 CY27C256T-70WMB 27C256 UV 27c256120
Contextual Info: CY27C256 V CYPRESS Features • W ide speed range — 45 ns to 200 ns com m ercial and m ilitary • Low power — 248 raW (commercial) — 303 mW (m ilitary) • Low standby power — Less th a n 83 raW when deselected • ± 10% Power supply tolerance

CY27C256A-120WC

Abstract: c256a CY27C256A-90WC CY27C256A-90JC CY27C256A-200PC 1N3064 CY27C256A-120PC W16 O4
Contextual Info: fax id: 3026 CY27C256A 32K x 8 CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. The CY27C256A is available in windowed and opaque packages. Windowed packages allow the device to be erased with UV light for 100% reprogrammability.

C5121

Abstract: c5125 C5126 1N3064 27C512-120 27C512-150 C512 CY27C512 C5124 CY27C512-150PC
Contextual Info: ADVANCED INFORMATION CY27C512 64K x 8 CMOS EPROM Functional Description Features D D D D D The CY27C512 is a highĆperformance, 512K CMOS EPROM organized in 64 Kbytes. It is available in industryĆstandard 28Ćpin, 600Ćmil DIP, 32Ćpin LCC and PLCC, and 28Ćpin TSOPĆI packages. The

14A0

Contextual Info: fax id: 3026 C Y 2 7 C 2 5 6 A 3 2 K x 8 CMOS EPROM Featu res • Very F ast Read A c c e s s T im e: 45 - 2 0 0 ns • SV ± 10% P o w e r S u p p l y • C a p a b le o f w i t h s t a n d i n g >200 1V ESD • L a tc h - u p P r o t e c tio n up to 2 0 0 m A

Contextual Info: fax id: 3026 CY27C256A w CYPRESS 32K x 8 CMOS EPROM Features 28-pin, 600-mil DIP, 32-pin LCC and PLCC, and 28-pin TSOP-I packages. The CY27C256A is available in windowed and opaque packages. Windowed packages allow the device to be erased with UV light for 100% reprogrammability.

Contextual Info: à * T7CC1 CY27C512 ADVANCED INFORMATION C Y r n h o o 64K x 8 CMOS EPROM Features Functional D escription • CMOS for optimum speed/power • High speed — Iaa - 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

C286

Abstract: CY7C287 CY7C286-70WC C2867 C2863 C2868
Contextual Info: CY7C286 64K x 8 Reprogrammable PROM Features in the active mode and 40 mA in the standby mode. Access time is 45 ns. • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — tAA = 45 ns • Low power — 120 mA active The CY7C286 is available in a cerDIP package equipped with

H5128

Abstract: CY27H512
Contextual Info: PRELIMINARY Functional Description Features D D D D D Ċ Ċ Ċ Ċ High speed tAA = 25 ns max. commercial tAA = 35 ns max. (military) Low power 275 mW max. Less than 85 mW when deselected ByteĆwide memory organization 100% reprogrammable in the windowed package

27h256

Abstract: h2566 H2567 CY27H256-70LMB CY27H256 H256 27H256-30
Contextual Info: PRELIMINARY CY27H256 32K x 8 HighĆSpeed CMOS EPROM Functional Description Features D D D D D The CY27H256 is a highĆperformance, 256K CMOS EPROM organized in 32 Kbytes. It is available in industryĆstandard 28Ćpin, 600Ćmil DIP, 32Ćpin LCC and PLCC, and 28Ćpin TSOPĆI packages.

CY27H512

Contextual Info: fax id: 3020 1CY 27H5 12 CY27H512 PRELIMINARY 64K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected