VTD3 Search Results

vectron crystal oscillator

Abstract: 32.768 khz crystal 5ppm
Contextual Info: VTD3 series Voltage Controlled Temperature Compensated Crystal Oscillator Features • CMOS Output • Output Frequencies to 61.440 MHz • Fundamental Crystal Design • Optional VCXO function available • Product is compliant to RoHS directive Applications

Contextual Info: Alternate Source/ Second Source Photodiodes VTD31AAH CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of

VTD34SM

Contextual Info: SILICON PHOTODIODE VTD34SM FEATURES PRODUCT DESCRIPTION • High sensitivity • Low capacitance This P on N photodiode is packaged in a transparent plastic package with the leads configured for surface mounting. • Fast response • Low noise • High shunt impedance

Photodiode vactec

Abstract: bpw 50 VTD34 BPW 34
Contextual Info: SbE D • 3D3QbOcì 0001121 7ÔÔ * V C T V T D 3 4D S Rev. B SILICON PHOTODIODE J ^ E G a G VACTEC VTD34 OPTOELECTRONICS E BPW 34 INDUSTRY EQUIVALENT G 8c G V A C T E C T -4 1 -5 1 PRODUCT DESCRIPTION FEATURES • High sensitivity • Lo w capacitance •

BPW34F

Abstract: VTD34F
Contextual Info: VTD34F Alternate Source/ Second Source Photodiodes BPW 34F IN D U STRY EQUIVALENTI PACKAGE DIMENSIONS inch (mm 182 ( ¿ .6 2 ) 172 ( 4 . 3 7 )] (0 .5 8 ) .0 39 ( 3 .3 0 ) .0 4 2 ( 1 .0 7 ) ( 1. 0 0 ) ' .0 3 2 ( 0 .3 1 ) (2 .4 9 ) NOW. OPTICAL Ç. • r T

Contextual Info: SbE D • BDSGbQ'ì 0 0 0 1 1 2 1 7ÔB ■ VCT VT0340S Rev. B SILICON PHOTODIODE J ^ E G zG VACTEC VTD34 OPTOELECTRONICS BPW 34 INDUSTRY EQUIVALENT E 6 8t G V A C T E C T-41-51 PRODUCT DESCRIPTION FEATURES • This P on N photodiode is designed to provide

bpw 50

Abstract: PerkinElmer fyd-1150 K/PerkinElmer fyd-1150
Contextual Info: SILICON PHOTODIODE VTD34FSMH BPW 34F INDUSTRY EQUIVALENT PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Infrared transmiting package • High sensitivity Planar silicon photodiode in an infrared transmitting, visible blocking molded plastic package.

VTD31AAH

Abstract: CLD31AA
Contextual Info: Alternate Source/ Second Source Photodiodes VTD31AAH CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of

vectron tcxo 16,384

Abstract: TCXO Quartz oscillator compensated 10 MHz vectron crystal oscillator PLM CMOS
Contextual Info: VTD3 series Voltage Controlled Temperature Compensated Crystal Oscillator Features • CMOS Output • Output Frequencies to 60 MHz • Fundamental Crystal Design • Optional VCXO function available • Product is compliant to RoHS directive Applications

VTD34H

Abstract: BPW34 BPW34 application note BPW34 application BPW34 circuit
Contextual Info: Alternate Source/ Second Source Photodiodes VTD34H BPW34 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a transparent molded

Contextual Info: SILICON PHOTODIODE VTD34FSMH BPW 34F INDUSTRY EQUIVALENT PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Infrared transmiting package • High sensitivity Planar silicon photodiode in an infrared transmitting, visible blocking molded plastic package.

Contextual Info: VTD34 Alternate Source/ Second Source Photodiodes B P W 3 4 IN D U S T R Y E Q U IV A L E N T PACKAGE DIMENSIONS inch (mm) 182 ( * .6 2 ) , _ ( 0 .5 8 ) ( 3 .3 0 ) .0 4 2 ( 1 .0 7 ) .0 3 9 (1.00)' .0 3 2 ( 0 .8 1 ) ( 2 .4 9 ) NOM. OPTICAL <1 Ic a t h o d e K

VTD3

Contextual Info: VTD3 series Voltage Controlled Temperature Compensated Crystal Oscillator Features • CMOS Output • Output Frequencies to 61.440 MHz • Fundamental Crystal Design • Optional VCXO function available • Product is compliant to RoHS directive Applications

Contextual Info: VT-501 Temperature Compensated Crystal Oscillator Previous Vectron Model VTD3 VT-501 Description Vectron’s VT-501 Temperature Compensated Crystal Oscillator TCXO is a quartz stabilized, CMOS output, analog temperature compensated oscillator, operating off either a 3.3 or 5.0 volt supply in a 9.9 x 11.8mm FR4 board with nickel cover.

VTD34FSM

Abstract: bpw photodiode
Contextual Info: SILICON PHOTODIODE VTD34FSM BPW 34F INDUSTRY EQUIVALENT PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Infrared transmiting package • High sensitivity Planar silicon photodiode in an infrared transmitting, visible blocking molded plastic package.

Contextual Info: VTD31AA Alternate Source/ Second Source Photodiodes ICLD31AA INDUSTRY EQUIVALENTI PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy.

EG 8010

Contextual Info: VTD3 series Voltage Controlled Temperature Compensated Crystal Oscillator Features • CMOS Output • Output Frequencies to 50 MHz • Fundamental Crystal Design • Optional VCXO function available • Product is compliant to RoHS directive Applications

TS 4140 smd

Abstract: VTD3 VT501 smd NE 217C vectron tcxo vt-501
Contextual Info: VT-501 Temperature Compensated Crystal Oscillator Previous Vectron Model VTD3 VT-501 Description Vectron’s VT-501 Temperature Compensated Crystal Oscillator TCXO is a quartz stabilized, CMOS output, analog temperature compensated oscillator, operating off either 3.3 or 5.0 volt supply, 9.9x11.8 FR4 board with a nickel cover.

BPW34

Abstract: VTD34
Contextual Info: VTD34 Alternate Source/ Second Source Photodiodes BPW 34 IN DU STRY EQUIVALENT P A C K A G E DIMENSIONS inch (mm) 182 ( * .6 2 ) , (0 .5 8 ) .0 39 .0 9 8 ( 1.0 0 ) ' ( 2 .4 9 ) NOM. _ ( 3 .3 0 ) .0 4 2 ( 1 .0 7 ) .0 3 2 ( 0 . 8 1 ) ' OPTICAL £ I r •f

31AA

Abstract: CLD31 VTD31 VTD31AA Photodiode vactec
Contextual Info: Sb E D 3G30bD^ OODlin 02 T • ■p-41-S I VCT VTD31, VTD31AA VTP Process Photodiodes C L D 3 1 , 3 1 A A IN D U S T R Y E Q U IV A LE N T E G 8c 0 VACTEC PACKAGE DIMENSIONS inch (mm) CASE 13 PRODUCT DESCRIPTION CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2)

31AA

Abstract: CLD31 VTD32 VTD32AA
Contextual Info: SbE D 3D30b0^ □□01120 am • VCT VTD32, VTD32AA VTP Process Photodiodes C L D 3 1 . 3 1 AA L A R G E CH I P I N D U S T R Y EQUIV. E 8. G G VACTEC T-41-51 PACKAGE DIMENSIONS inch (mm) CASE 13 PRODUCT DESCRIPTION CERAMIC CHIP ACTIVE AREA: .033 in2 (21.2 mm2)

940 nm

Abstract: BPW34F VTD34F
Contextual Info: Alternate Source/ Second Source Photodiodes VTD34F BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light

BPW34 application note

Abstract: BPW34 VTD34
Contextual Info: Alternate Source/ Second Source Photodiodes VTD34 BPW34 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a transparent molded

VTD34FH

Abstract: BPW34F
Contextual Info: Alternate Source/ Second Source Photodiodes VTD34FH BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light