VTB941 Search Results

Contextual Info: VTB9412B, 9413B VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20F Sm all area planar silicon photodiode in a recessed ceram ic package. The package incorporates an infrared re­ jection filter. These diodes have very high shunt resistance and good blue

Contextual Info: Sb E D 3D3 0b CH O D O l OS b G ib HVCT VTB941 5, 9416 VTB Process Photodiodes E fi & G VACTE C T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of

9416B

Abstract: VTB9415B VTB9416B
Contextual Info: SLE o o o i o s a T= n D VTB9415B, 9416B VTB Process Photodiodes E 6 & I VCT T-41-5 1 G VACTEC PACKAGE D IM EN SIO N S inch mm CASE 20F PRODUCT DESCRIPTIO N Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejec­

VTB9412

Abstract: VTB9413
Contextual Info: VTB Process Photodiodes VTB9412, 9413 PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated

VTB9412BH

Contextual Info: VTB Process Photodiode VTB9412BH, 9413BH PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package

Contextual Info: VTB Process Photodiode VTB9412BH, 9413BH PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package

Contextual Info: VTB Process Photodiode VTB9412H, 9413H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated

Contextual Info: VTB Process Photodiodes VTB9412B, 9413B PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These

9413H

Abstract: rsh8
Contextual Info: VTB Process Photodiode VTB9412H, 9413H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated

Contextual Info: VTB Process Photodiodes VTB9412, 9413 PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated

VTB9412

Abstract: VTB9413 VTB9414 sbe 320 blue
Contextual Info: SbE T> BDBObD^ Q0D1Ü55 G BVCT VTB9412 VTB Process Photodiodes E IflT 8. G V A C T E C T-41-51 P A C K A G E DIMENSIONS inch mm PRO D U CT DESCRIPTION CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Sm all area planar silicon photodiode in a recessed ceram ic package. Th e ch ip

Vactec

Abstract: VTB9415 VTB9416
Contextual Info: SbE D 3030bCH 000105b Dlb M V C T VTB Process Photodiodes VTB9415, E G & G VACTEC 9416 T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planarsilicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of

9413B

Abstract: VTB9412B VTB9413B
Contextual Info: VTB Process Photodiodes VTB9412B, 9413B PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

Contextual Info: SbE D BDBDbD^ QGD1055 IflT H V C T VT B 9 4 1 2 VTB Process Photodiodes E G & 6 VACTEC T-41-51 PACKAGE DIMENSIONS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of clear epoxy. These diodes offer very

TB505

Contextual Info: VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS PRODUCT DESCRIPTION FEATURES • • • • • This series of P on N silico n d iod es is primarily intended for use in the photovoltaic mode but may be used with a small reverse bias. The diod es have

VTB8440

Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
Contextual Info: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0

9413B

Abstract: VTB9413B VTB9412B
Contextual Info: V T B 9 4 1 2 B , 9413B VTB Process Photodiodes I PACKAGE DIMENSIONS inch mm CASE 20F PRODUCT DESCRIPTION 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared re­

Contextual Info: SbE ]> • 3 0 3 0 b 0 T 0001DS7 TSS M V C T V TB 9 4 1 2B , 3B, 4B VTB Process Photodiodes E G & 6 VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20 F PRODUCT DESCRIPTION Small area planarsilicon photodiode in a recessed ceramic package. The package incorporates an infrared rejec­

VTB9415B

Abstract: VTB9416B k420 9416B x-1015 K4-20
Contextual Info: SbE D BOBGLG'i OÜGlOSfl * W VTB Process Photodiodes HVCT V T B 9 4 1 5 B , 9 4 16B E: 6 & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceram ic package. The packageincorporatesan infrared rejec­

5041J

Abstract: photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B
Contextual Info: This Material VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS Copyrighted P R O D U C T D ESC RIPTIO N FEATURES • Enhanced UV to IR spectral range. • Integral IR rejection filters available • No UV enhancement- By Its • Response @ 220 nm, 0.06 A/W, Typ with

VTB9412

Abstract: VTB9413
Contextual Info: VTB Process Photodiodes V T B 9 4 1 2, 9413 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of clear epoxy. These diodes offer very high shunt resistance and good blue