VR20K Search Results

SBR130S3

Contextual Info: SBR130S3 Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@1A, TJ=75oC TJ (operating/storage) Units 1.0 *

SBR120S3

Contextual Info: SBR120S3 Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@1A, TJ=75oC TJ (operating/storage) Units 1.0 *

di sod323

Abstract: SBR0120S3 SBR0120S5 APD SEMICONDUCTOR
Contextual Info: SBR0120S3 SBR0120S5 Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Characteristics Values IF AV Rectangular Waveform VRRM VF@0.1A, TJ=75oC TJ (operating/storage)

100C

Abstract: 125OC SBR60A45PT
Contextual Info: SBR60A45PT Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@30A, Tj=125OC Tj (operating/storage) Device optimized for low forward voltage drop to

100C

Abstract: 125OC SBR60A150PT
Contextual Info: SBR60A150PT Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@30A, Tj=125OC Tj (operating/storage) Device optimized for low forward voltage drop to

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR20L45C DIODE DUAL MOS GATED BARRIER RECTIFIERS  DESCRIPTION The UTC MGBR20L45C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with high current capability, low forward voltage and high switching speed, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR20S50C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR20S50C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR10S50C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10S50C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR10L50C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10L50C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR10V60C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10V60C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.

100C

Abstract: 125OC SBR40U45PT
Contextual Info: SBR40U45PT Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@20A, Tj=125OC Tj (operating/storage) Device optimized for low forward voltage drop to

125OC

Abstract: 175C SBR40100PT
Contextual Info: SBR40100PT Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@20A, Tj=125OC Tj (operating/storage) Device optimized for low forward voltage drop to

CMD44

Abstract: M51517 r305 finger print module BJT 3904 1510487 1SS355 ROHM smd code Z2p CMD62 RJ9 jack dimension CP10-VIA
Contextual Info: A B C D POWER ADAPTER 3V/5V/12V 4 CPU VIA C3 CPUCORE POWER PAGE 33 EBGA PAGE 3,4 PAGE 35 CHARGER BATTERY VTT 2.5V PAGE 36, 37 PAGE 34 PCI ID AD20 CARDBUS AD21 IEEE 1394 AD22 USB 2.0 AD24 LAN AD26 SOUTH BRIDGE AD18 PCI INT PCI REQ/GNT INTA#, INTD# REQ0#/GNT0#

Contextual Info: SBR20U60CT SBR20U60CTF SBR20U60CTI SBR20U60CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 20 A VRRM 60 V 0.45 -65 to 150 V, typ O C

SBR2050CT

Abstract: SBR2050CTF sbr2050 C2050 SBR2050CTB
Contextual Info: SBR2050CT SBR2050CTF SBR2050CTI SBR2050CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 20 A VRRM 50 V 0.49 -65 to 150 V, typ O C O VF@10A, Tj=125 C

Contextual Info: SBR60A150CT - Prel SBR60A150CTF - Prel SBR60A150CTI - Prel SBR60A150CTB - Prel Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 60 A VRRM

SBR20U100CTI

Abstract: SBR20U100CTF
Contextual Info: SBR20U100CT SBR20U100CTF SBR20U100CTI SBR20U100CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics Units IF AV Rectangular Waveform 20

Contextual Info: SBR30U100CT - Prel SBR30U100CTF - Prel SBR30U100CTI - Prel SBR30U100CTB - Prel Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 30 A VRRM

SBR10150CTI

Contextual Info: SBR10150CT - Prel SBR10150CTF - Prel SBR10150CTI - Prel SBR10150CTB - Prel Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 10 A VRRM 150

Contextual Info: SBR60A45CT Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@30A, Tj=125OC Tj (operating/storage) Device optimized for low forward voltage drop to

Contextual Info: SBR10U100CT SBR10U100CTF SBR10U100CTI SBR10U100CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics Units IF AV Rectangular Waveform 10

SBR20A40CT

Contextual Info: SBR20A40CT SBR20A40CTF SBR20A40CTI SBR20A40CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 20 A VRRM 40 V 0.41 -65 to 150 V, typ O C

Contextual Info: SBR20A250CT SBR20A250CTF SBR20A250CTI SBR20A250CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 20 A VRRM 250 V 0.67 -65 to 175 V, typ

SBR30U45CT

Contextual Info: SBR30U45CT SBR30U45CTF SBR30U45CTI SBR30U45CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics 30 A VRRM 45 V 0.41 -65 to 150 V, typ O C