VR20 Search Results

Contextual Info: VR200-T30-S-13 revised 4/3/00 3:35 PM Page 13 Paperless Recorder VR200 Series 2400 $ Basic Unit ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ 2, 4 or 6 Channels V, mV, T/C, RTD Inputs Color LCD Display Selectable Trend, Bargraph and Digital Displays Data Storage on

Contextual Info: VR20A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage20 @I(Z) (A) (Test Condition)12m Tolerance (%)5ì P(D) Max. (W)1.0 Z(z) Max. (ê) Dyn. Imped.22 Temp Coef pp/10k Maximum Operating Temp (øC)125’ Package StyleAxial-38

VR525F

Abstract: VR625F VR575F vr13e VR10F C6V3 VR475F VR425F vr22 vr62
Contextual Info: V R T Series 2 25VV 3 5V to 30V ± 5% Nomina! Tamb = 25°C unless otherwise stated Differential resistance W orking voltage Type Number VR35F VR425F VR475F VR525F VR575F VR625F VR7F VR8F VR9F VR1 OF V R 11 F VR1 2 F VR1 3F VR15F VR16F VR13F VR20F VR22F

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. DATA PART NO. DATE ： A2964B/VR2002/8/26 ： DEPARTMENT： VERSION SHEET CHR&D1 ： 1 RECEIVED • MASS PRODUCTION □ PRELIMINARY □ CUSTOMER DESIGN DEVICE NUMBER : PAGE : 6 CUSTOMER REV. DESIGNER CDAE-296-002 CHECKER APPROVER

AK2358F

Abstract: VR13 VR20 Cordless Telephone Scrambler
Contextual Info: This document is not intended for viewing onscreen. It is best viewed when printed and read from paper. Depending on your printer, you may need to select “Shrink to Fit” in the print dialog to ensure that the document prints correctly. [AK2358FI ASAHI KASEI

SBR130S3

Contextual Info: SBR130S3 Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@1A, TJ=75oC TJ (operating/storage) Units 1.0 *

SBR120S3

Contextual Info: SBR120S3 Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@1A, TJ=75oC TJ (operating/storage) Units 1.0 *

di sod323

Abstract: SBR0120S3 SBR0120S5 APD SEMICONDUCTOR
Contextual Info: SBR0120S3 SBR0120S5 Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Characteristics Values IF AV Rectangular Waveform VRRM VF@0.1A, TJ=75oC TJ (operating/storage)

100C

Abstract: 125OC SBR60A45PT
Contextual Info: SBR60A45PT Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@30A, Tj=125OC Tj (operating/storage) Device optimized for low forward voltage drop to

100C

Abstract: 125OC SBR60A150PT
Contextual Info: SBR60A150PT Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@30A, Tj=125OC Tj (operating/storage) Device optimized for low forward voltage drop to

Contextual Info: High Voltage Resistors d high power - high voltage Key features • thick film element • alternative mounting styles • values up to 400 megohms • minimal inductance • maximum 100 watt dissipation • up to 125kv dc • negligible capacitance • stable under load life

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR20L45C DIODE DUAL MOS GATED BARRIER RECTIFIERS  DESCRIPTION The UTC MGBR20L45C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with high current capability, low forward voltage and high switching speed, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR20S50C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR20S50C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR10S50C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10S50C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MGBR10V60C Preliminary DIODE DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR10V60C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.

VR201

Abstract: 10-14VDC PFE1000F pfe1000f-48 PFE1000 SW201 YC-251 VR202 PFE1000F-28 JEITA-9131B
Contextual Info: PFE1000F Series Evaluation Board PFE1000F/EB Evaluation Board Instruction Manual and Electrical Characteristics _CAUTION ・Dangerous voltage 390V and high temperatures are present with the PFE Evaluation Board (unit) (unit). ・Avoid touching the unit during operation to avoid electric shock and possibility of being burned.

Motorola UHF Power Amplifier Module

Abstract: MHW932 VR200 motorola gsm range power amplifier module
Contextual Info: MOTOROLA Order this document by MHW932/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Amplifier MHW932 . . . designed specifically for the Pan European digital 20 watt, GSM mobile radio. The MHW932 is capable of wide power range control, operates from a

TAG 8446

Abstract: vr28 MPC7400 MPC750
Contextual Info: MPC7400 RISC Microprocessor UserÕs Manual MPC7400UM/D Rev. 0.1, 12/1999 ª PRELIMINARYÑSUBJECT TO CHANGE WITHOUT NOTICE DigitalDNA and Mfax are trademarks of Motorola, Inc. The PowerPC name, the PowerPC logotype, and PowerPC 603e are trademarks of International Business Machines Corporation

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales

MPC7400

Abstract: MPC750 MPC750A
Contextual Info: ALTIVECPEM/D 2/2001 Rev. 1.0 AltiVec Technology Programming Environments Manual AltiVec is a trademark of Motorola, Inc. DigitalDNA is a trademark of Motorola, Inc. The PowerPC name and the PowerPC logotype are trademarks of International Business Machines Corporation used by Motorola under license from

FPT-80P-M01

Abstract: VR74 VR105
Contextual Info: cP April 1991 Edition 1.0 DATA SHEET = FUJI' - ' MB86490 CMOS AUTOMOBILE TELEPHONE AUDIO PROCESSOR The Fujitsu M886490 processes the baseband signal for automobile telephones for both AMPS United States and TACS (United Kingdom) systems. The MB86490 combines the control signal processing functions of the MB87084

TR1402A

Abstract: TR1402 SW11339 power transistor mrc 438 ITT Semiconductors cathode ray 7404 not gate ic circuit diagrams LTS 542 10 pin common anode display elexon LJ sharp EL display
Contextual Info: SERVICE MANUAL MINI BEE BEEHIVE MEDICAL ELECTRONICS, INC. 870 WEST 2600 SOUTH SALT LAKE CITY, UTAH 84119 C O PY R IG H T 1973 B E E H IV E M ED IC A L ELEC T R O N IC S, INC. P R IN T E D IN U.S.A. MINI BEE COMPUTER TER M IN AL SERVICE MANUAL MARCH 1974 This Document has been prepared by Beehive Medical Electronics and is

100C

Abstract: 125OC SBR40U45PT
Contextual Info: SBR40U45PT Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@20A, Tj=125OC Tj (operating/storage) Device optimized for low forward voltage drop to

125OC

Abstract: 175C SBR40100PT
Contextual Info: SBR40100PT Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@20A, Tj=125OC Tj (operating/storage) Device optimized for low forward voltage drop to