VQE 71 Search Results

Contextual Info: P D -9.1127 International K>ÎLRectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz

Contextual Info: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

irgph50ud

Abstract: IRGPH50u C732 TRANSISTOR transistor C732
Contextual Info: International îor Rectifier PD - 9.802A IRGPC50UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

Contextual Info: I . I P D -5038 International I@R Rectifier CPV 363M 4F preliminary IGBT SIP MODULE Features • • • • Fast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail” losses HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz

Contextual Info: TOSHIBA {DI SC RE TE /OPT O} * • dF 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR I t o ^tssd 90D 16129 auibiai D t 7"-33~/3 TOSHIBA GTR MODULE MG50H1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

transistor bh ra

Abstract: WE VQE 24 E D 400 F 6 F BIPOLAR TRANSISTOR WE VQE 11 E BUK856-800A T0220AB M 615 transistor
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl5b 00b4353 ^bS ■ P H I N Philips Semiconductors_ Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a

Contextual Info: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve

Motorola transistors MJE3055

Abstract: Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit MJE2955 mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 2955 Com plem entary Power Transistors PNP M JD 3055 DPAK For Surface Mount Applications ‘ Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • •

Contextual Info: PD - 9.1654A International I R Rectifier IR G 4 B C 4 0 W INSULATED GATE BIPOLAR TRANSISTOR Features c • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies

Contextual Info: International XOR Rectifier C PV362M 4F IG BTSIP MODULE Fast IGBT Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz

IRGAC50U

Abstract: transistor G46 IGBT g48 ge 142 bt 34w
Contextual Info: International Rectifier PD-9.726A IRGAC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

transistor c925

Abstract: DIODE C921
Contextual Info: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses

Contextual Info: International P D - 9.1031 ¡ragRectifier IRGPC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Sw itching-loss rating includes all "tail" lo sses • Optimized for high operating frequency over 5kHz S e e Fig. 1 for Current vs. Frequency curve

Contextual Info: International P D - 9.1108 ioR Rectifier IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 6 0 0 V Short circuit rated -10ps @125°C, VGE = 15V Switching-loss rating includes all "tail" losses

MA4T64500

Abstract: 4558 MA4T64535 557 sot143 micro X
Contextual Info: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV

BF 914 transistor

Abstract: transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914
Contextual Info: SIEMENS SIEGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability

ic RSN 315 H 42

Abstract: vqe 23c iCR 406 J
Contextual Info: International IGR Rectifier PD-9.1629 IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of ail power supply topologies

Contextual Info: PRELIMINARY DATASHEET NO. PD-9.802 International S ] Rectifier IRGPC50UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT • Latch-proof • Simple gate drive • High operating frequency • Switching-loss rating includes

transistor C618

Abstract: c618 diode c617 transistor
Contextual Info: International jajRectffier_ IRGB420UD2 p d INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE -# .« » UltraFast CoPack IGBT Features V ces = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

GaAs tunnel diode

Abstract: DATASHEET TUNNEL DIODE tunnel diode GaAs Gallium Arsenide tunnel diode AEROFLEX germanium diode 1N6638 1N6639 1N6640 1N6641
Contextual Info: FOR IMMEDIATE RELEASE: April 16, 2010 CONTACT: Aeroflex Microelectronic Solutions Teresa Farris MARCOM Manager 719-594-8035 Teresa.farris@aeroflex.com www.aeroflex.com/metelics-hirelcomponents Aeroflex / Metelics Pete Ciccarelli Product Sales Manager 603-641-3800 x3272

diode c743

Abstract: c743 diode
Contextual Info: PD - 5.027 International iôRjRectifier CPV362MU Ultra-Fast IGBT IGBT SIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz

SDIM25B120A

Contextual Info: .Æntran Devices, Inc. FEATURES: SDIM25B120A 25 A 1200 V Six - Pack Configuration PACKAGE: 10 A, 1200 V at Tc = 110°C 3 Phase Output Inverter with Fast Free-Wheel Diodes Insulated Metal Baseplate 1200 V Switching SOA Capability Short Circuit Rated Low On-State Saturation \bltage

Contextual Info: International IO R Rectifier PD-91791 IRG4IBC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features c • D esig n ed expre ss ly for S w itc h -M o d e P o w er Su pp ly and P F C p o w er factor correction ? applications • 2 .5 k V , 6 0s insulation voltage