VQE 22 Search Results

Contextual Info: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)

sot marking code LB

Abstract: sot-223 marking 840
Contextual Info: Central CZT3090L Semiconductor Corp. SURFACE MOUNT LOW VCE SAT NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT3090L is a Low Vqe( 5a t) NPN Transistor in a space sav­ ing Power SOT-223 surface mount package, designed for DC-DC converters for mobile sys­

C965 transistor

Abstract: transistor c965 transistor c964
Contextual Info: PD - 5.032 International S» ]Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated - 10ps @ 125°C, Vqe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

Contextual Info: bitemational ^Rectifier PD - 9.1073 IRGBC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

QML-19500

Abstract: at-614 1N4100-1 1N4135-1 1N4614-1 1N4627-1 JANS1N4100-1
Contextual Info: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DSCC-VQ VQE-10-020429/Mr. Deslich/614-692-0593/bpd June 3, 2010 SUBJECT: Notification of Qualification Extension, MIL-PRF-19500N, FSC 5961

VQE 13

Abstract: 1N6641 1N6642 JANTX 1N6638 1N6639 1N6640 1N6642 1N6643 JAN1N6642 Qualification
Contextual Info: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DSCC-VQ VQE-09-017180/Mr. Carpenter/614-692-7078/kc SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961 January 13, 2009

c839 transistor

Abstract: c838 transistor transistor C839 C838 TRANSISTOR c842 C839 C842 C837 VQE 21 d C839 H
Contextual Info: htemational S Rectifier P D -9.1128 IRGBC20K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all 'tail1' losses • Optimized for high operating frequency over 5kHz

transistor c925

Abstract: smd transistor c928 transistor c923 c927 diode c928 DIODE C921 transistor smd qe c924 diode smd qe C925
Contextual Info: P D - 9.1142 bitemational [«»IRectifier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Ie • Short circuit rated -1 Ops @125°C, VqE= 15V • Switching-loss rating includes all "tail" losses

Contextual Info: TO SHIBA 2SD1314 2S D1 314 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 20.5MAX. • • ^3.3 ±0.2 High DC Current Gain : —100 (Min.) Low Saturation Voltage : Vqe (sat)~^V (Max.)

C959

Abstract: transistor c956 C956 IRGPC50KD2 c954 30A to-247ac Diode IOR 10 dc
Contextual Info: P D - 9.1123 International »»Rectifier IRGPC50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features c V ces = 600V • Short circuit rated -10|js @ 125°C, VQE = 15V • Switching-loss rating includes all "tail" losses

Contextual Info: P D -9.1127 International K>ÎLRectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

c877

Abstract: TRANSISTOR C875 C878 transistor transistor c877 c878 C875 transistor C876 c874
Contextual Info: P D - 9.1129 bitemational [ÏÔR Rectifier IRGPC20K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - lOpis @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over

2SA1588

Abstract: 2SC4118 A1588
Contextual Info: TOSHIBA 2SA1588 2 S A 1 588 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS A U D IO FREQUENCY LO W POWER AM PLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • Excellent hpE Linearity : hpE (2) = 25 (Min.) at VqE = —6V, Iq = —400mA

Contextual Info: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz

transistor TO-3P Outline Dimensions

Abstract: IRGPC60K
Contextual Info: PD - 9.1296 International i^ ] Rectifier IRGPC60K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Fea tu res • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

Contextual Info: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode

2SC5376

Contextual Info: TO SH IBA 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS 1.6 ± 0.2 ,0.8 ± 0 . 1, r— :— 1 Low Collector Saturation Voltage : Vqe sat W = Í5m v (Typ.)

vqe 23

Abstract: WE VQE 23 E VQE 23 E ma 2830 MIL-PRF-19500N 1N829-1 1N821-1 VQE 11 VQE-11-021510 e422
Contextual Info: DEFENSE LOGISTICS AGENCY LAND AND MARITIME POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DLA LAND AND MARITIME-VQ VQE-11-021510/Mr. Alan Barone/614-692-0510 November 23, 2010 SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961

1N4372A-1

Abstract: 1N4614-1 1N4627-1 1N746A-1 JAN1N4134 1N4099-1 1N4135-1 1N4370A-1
Contextual Info: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DSCC-VQ VQE-10-019068/Mr. Carpenter/614-692-7078/kc October 7, 2009 SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961 Mr. Mark McNulla

Contextual Info: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode

C869

Abstract: transistor C870 irectifier c872
Contextual Info: P D - 9.1134 kitemational IÎÔRIRectifier IRGBC40K-S Short Circuit Rated UltraFast Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-ioss rating includes all "tail* losses • Optimized for high operating frequency over 5kHz

YTS2222A

Contextual Info: TOSHIBA YTS2222A Transistor U n it in m m Silicon NPN Epitaxial Type For General Purpose Use Medium-Speed Switching and Audio to VHF Frequency Application Features • DC Current Gain Specified - 0.1 - 500mA • Low Coilector-Emitter Saturation Voltage - Vqe sat = 1 -60V (Max.) @ Iq = 500mA, lB = 50mA

C1027

Abstract: transistor c1027 transistor c1026 c1027 transistor C1026 c1023 transistor C-1027 transistor c1027 same transistor C1023 c1026 transistor
Contextual Info: PD-9.1126A bitemational i ?]Rectifier IRGPH50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 1 0 js @ 125°C, V qe = 10V (5ps ® Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for high operating frequency (over 5kHz)

2SC2550

Abstract: 2SA1090 2SC400 2SC970 2sa467 2SC1380A 2SC372 NPN 2sc372 2SC395A 2SC979A
Contextual Info: Powered by ICminer.com 7. INDUSTRIAL APPLICATIONS TO-92 -3 o to X H 00 > Electronic-Library Type No. Application NPN I PNP v CE0 •c PC V (mA) (mW) hFE Vqe (V) fT TYP. v CE(sat) M A X - 'c 'C 'b (mA) (mA) (V) (mA) Cob TYP. SW Time TYP. V CB tstg tf 'o (V)