VQE 22 Search Results

Contextual Info: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)

C965 transistor

Abstract: transistor c965 transistor c964
Contextual Info: PD - 5.032 International S» ]Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated - 10ps @ 125°C, Vqe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

Contextual Info: bitemational ^Rectifier PD - 9.1073 IRGBC40K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

QML-19500

Abstract: at-614 1N4100-1 1N4135-1 1N4614-1 1N4627-1 JANS1N4100-1
Contextual Info: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DSCC-VQ VQE-10-020429/Mr. Deslich/614-692-0593/bpd June 3, 2010 SUBJECT: Notification of Qualification Extension, MIL-PRF-19500N, FSC 5961

VQE 13

Abstract: 1N6641 1N6642 JANTX 1N6638 1N6639 1N6640 1N6642 1N6643 JAN1N6642 Qualification
Contextual Info: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DSCC-VQ VQE-09-017180/Mr. Carpenter/614-692-7078/kc SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961 January 13, 2009

Contextual Info: TO SHIBA 2SD1314 2S D1 314 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 20.5MAX. • • ^3.3 ±0.2 High DC Current Gain : —100 (Min.) Low Saturation Voltage : Vqe (sat)~^V (Max.)

Contextual Info: P D -9.1127 International K>ÎLRectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz

MG15N2YS1

Abstract: ALY TRANSISTOR transistor ALY
Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG15N2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=1.Oys Max. trr=0.5us(Max.) . Low Saturation Voltage: Vqe ( s a t )= 5.OV(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in one

Contextual Info: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode

vqe 23

Abstract: WE VQE 23 E VQE 23 E ma 2830 MIL-PRF-19500N 1N829-1 1N821-1 VQE 11 VQE-11-021510 e422
Contextual Info: DEFENSE LOGISTICS AGENCY LAND AND MARITIME POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DLA LAND AND MARITIME-VQ VQE-11-021510/Mr. Alan Barone/614-692-0510 November 23, 2010 SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961

1N4372A-1

Abstract: 1N4614-1 1N4627-1 1N746A-1 JAN1N4134 1N4099-1 1N4135-1 1N4370A-1
Contextual Info: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DSCC-VQ VQE-10-019068/Mr. Carpenter/614-692-7078/kc October 7, 2009 SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961 Mr. Mark McNulla

Contextual Info: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode

YTS2222A

Contextual Info: TOSHIBA YTS2222A Transistor U n it in m m Silicon NPN Epitaxial Type For General Purpose Use Medium-Speed Switching and Audio to VHF Frequency Application Features • DC Current Gain Specified - 0.1 - 500mA • Low Coilector-Emitter Saturation Voltage - Vqe sat = 1 -60V (Max.) @ Iq = 500mA, lB = 50mA

2SB15

Abstract: 2SB1508 KFU508 SB15 TI5C 37143
Contextual Info: [^O rdering n u m b e r: EN3714 2SB1508/2SD2281 PN P/N PN E pitaxial Planar Silicon Transistors H igh-C urrent Switching Applications Applications • Relay drivers, high-speed inverters, converters. F e a tu r e s • Low collector-to-em itter satu ratio n voltage : VQE sat = —0.5V(PNP), 0.4V(NPN)max.

Contextual Info: euoec BSM150GB170DN2 E3166 F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • on,min = "10 Ohm Type BSM150GB170DN2 E3166 VbE h 1700V 220A Package Ordering Code

PSS320

Contextual Info: SIEMENS BUP 410 IGBT • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type V'CE h Package Ordering Code BUP 410 600V 13A TO-220 AB C67040-A4424-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage ^CE Collector-gate voltage ^CGR Rqe = 20 k£2

Contextual Info: BCR 192W PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R-|=22k£2, R2=47k£2 c FI □ ill Type Marking Ordering Code Pin Confic uration BCR 192W WPs 1= B Q62702-C2282 Package 2= E

transistor 2222a

Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
Contextual Info: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B

siemens igbt

Contextual Info: SIEMENS SGP20N60 P relim inary data IGBT • Latch-up free • Avalanche rated P in i Pin 2 G Ul Type 600V SGP20N60 Pin 3 C E b Package Ordering Code 20A TO-220 AB Q67040-A . . . . Maximum Ratings Symbol Values LU Parameter 600 Collector-emitter voltage Coilector-gate voltage

VPI05

Abstract: IGBT SGP15N60
Contextual Info: SIEMENS SGP15N60 P rulim inary data IGBT • Low forward voltage drop r / • High switching speed VPI05I55 • Low tail current 1 • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 E C Type ^CE h Package Ordering Code SGP15N60 600V 15A TO-220 AB Q67040-A . . . .

VPT05155

Abstract: bup410d
Contextual Info: SIEMENS SGP04N60 P relim in ary d ata IGBT • Low forward voltage drop • High switching speed VPT05155 • Low tail current 1 • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE SGP04N60 600V 4A Pin 3 E C Package Ordering Code TO-220 AB Q67040-A . . . .

BF 914 transistor

Abstract: transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914
Contextual Info: SIEMENS SIEGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability

Contextual Info: PZT2222 PZT2222A _ J v _ SILICON PLANAR EPITAXIAL TRANSISTORS NPN silicon planar epitaxial transistors in a m icrom iniatureSM D package SOT-223 , prim arily intended for linear and switching applications. PNP complements are PZT2907/2907A.