VQE 208 E Search Results

IRGDDN600K06

Abstract: mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e
Contextual Info: International Provisional Data Sheet PD-9.1197 IRGDDN600K06 1RGRDN600K06 ^R ectifier "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail* losses

BG558

Abstract: bc548 TO-92 BC558 pin bc558 pnp transistors BC548
Contextual Info: BC556 - BC558 VISHAY PNP EPITAXIAL PLANAR TRANSISTORS lu T E M îï I POWER SEHCONDVCTOR/ Features • • • Ideal for Switching and AF Amplifier Applications Divided into Current Gain subgroups Complementary NPN Types Available BC546 thru BC548) TO-92

Contextual Info: H AR Fas HGTG34N100E2 December 1993 34A, 1000V N-Channel IGBT Package Features • JEDEC STYLE TO-247 TOP VIE N 34 Amp 1000 Volt • Latch Free Operation 3 FMITTFR • Typical Fall T im e-710ns • COLLECTOR BOTTOM SIDE METAL I , High Input Impedance

siemens igbt BSM 50 gb 100 d

Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 100 gb C160 C67076-A2100-A2 DD45 diode wss bsm siemens GGM5 C67076-A2002-A2
Contextual Info: bOE D • 8 2 3 5 b D 5 Q D L*Sfi4D S4b « S I E G SIEMENS s i e „ e n s A K T I E NGESELLSCHAF IGBT Module BSM 50 GB 100 D BSM 50 GAL 100 D Preliminary Data V CE = 1000 V / C = 2 x 70 A at T c = 25 C / c = 2 x 50 A at T c = 80 C • • • • • Power m odule

Contextual Info: International I R Rectifier PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IG B T technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kH z

VQE 22 led

Abstract: transistor sec 623 transistor sec 621 MOCD208 transistor D207
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD207 MOCD208 [CTR « 100-200%] Transistor Output [CTR = 40-125%] These devices consist of two gallium arsenide Infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface

30N120D2

Abstract: HGTG30N120D2 U 665
Contextual Info: HGTG30N120D2 30A, 1200V N-Channel IGBT December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 30 Am p 1200 Volt • Latch Free Operation ^FMITTFH • Typical Fall T im e - 580ns COLLECTOR BOTTOM SIDE METAL I • High Input Im pedance • Low C onduction Loss

Contextual Info: In te r n a tio n a l IQ R R e c tifie r p d p re lim in a ry - s .o bza G A 1 5 0 T D 1 2 0 U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Fe at ur es V • G en eratio n 4 IG BT te ch n o lo g y • S tan dard : O p tim ize d for m inim um saturation

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode M GY20N120D Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO-264 20 A @ 90°C 28 A @ 25 C 1200 VOLTS

Contextual Info: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C,

Marking ANs

Abstract: Transistor C 5198 b 514 transistor BFP450
Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability

Contextual Info: HA RR IS SEÎ1IC0N» S E C T O R bflE D • M30 E 27 1 DQSOEEfi Ô4T ■ ¡ H A S HGTG30N120D2 30A, 1200V N-Channel IGBT D ecember 1993 Features Package JEDEC STYLE TO-247 TOP VIE!N • 30 A m p 1200 V olt • L a tch Free O p e ra tio n _ EMITTER • T y p ic a l Fall T im e - 580ns

Contextual Info: PRELIMINARY MMST2222A VISHAY NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR / U T E M ir I p o w e fs e h co n w jcto r / Features Epitaxial Planar Die Construction Complementary PN P Type Available MMST2907A) Ultra-Small Surface Mount Package SOT-323 TOR VIEW

Contextual Info: MG300J1US51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode

Contextual Info: CM400HA-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SÍDQI& IGBTMOD H-Series Module 400 Amperes/1400 Volts Description: Powerex IG B TM O D ™ Modules are designed for use in switching applications. Each module consists

G30N60

Abstract: TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC
Contextual Info: in t e HGTG30N60B3D r r ii J a n u a ry . m D ata S h eet 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

Contextual Info: HG TG32N60E2 & 32A, 600V N-Channel IGBT D ecember 1993 Features Package • 32 Amp, 600 Volt JEDEC STYLE TO-247 TOP VIEW • Latch Free Operation • Typical Fall Time - 600ns • High Input Impedance • Low Conduction Loss COLLECTOR BOTTOM SIDE METAL '

14n60

Abstract: OT360 14N60E OC57
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet AAGW14N60ED Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packag ed w ith a soft recovery u ltra -fa s t re ctifier and uses an advanced

Contextual Info: TOSHIBA GT20G102 TOSHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 2 0 G 1 02 U nit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V c E say = 8V (Max. (Ic = 130A) Enhancement-M ode 12V Gate Drive

OF IGBT 300A 500V

Abstract: irgtdn300m06
Contextual Info: International Rectifier Provisional Data Sheet PD-9.1179 IRGTDN300M06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 300A • Rugged Design •S im p le gate-drive •Switching-Loss Rating includes all "tail" losses •S ho rt circuit rated

74ABT16821A

Abstract: 74ABTH16821A
Contextual Info: Philips Semiconductors Product specification 20-bit bus-interface D-type flip-flop; positive-edge trigger 3-State 74ABT16821A 74ABTH16821A FEATURES DESCRIPTION • 20-bit positive-edge triggered register The 74ABT16821A high-performance BiCMOS device combines

C451

Contextual Info: International iqrIRectifier Provisional Data Sheet PD-9.1174 IRGDDN300M06 IRGRDN300M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 300A • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail"

G32N60E2

Contextual Info: HG TG32N60E2 Semiconductor 32A, 600V N-Channel IGBT A pril 1995 Package Features • 32A, 600V JEDEC STYLE TO-247 EMITTER • Latch Free Operation • Typical Fall Time - 600ns • High Input Impedance • Low Conduction Loss Description The IGBT is a M OS gated high voltage switching device com bin­