VQE 14 E Search Results

Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V

Contextual Info: FF 400 R 06 KL 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Thermal properties 0,0345°C/W 0,069 °C/W 0,02 °C/W 0,04 °C/W DC, pro B a u ste in /p e r module DC, pro Zweig /p e r Arm pro Baustein / per module Electrical properties

vqe 24 e

Abstract: vqe 24 d
Contextual Info: euoec F BSM 20 GD 60 DL IGBT Power Module Prelim inary data • 600V NPT Technology • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE h Package O rdering Code BSM 20 GD 60 DL

307d

Abstract: vqe 14 E P 307 diode 307d
Contextual Info: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code

Contextual Info: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values

bup3140

Abstract: BUP 3140 GPT05155 BUP 300 L30 diode 4 pin
Contextual Info: SIEMENS BUP 314D IGBT With Antiparallei Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP 314D fc VCE 1200V 42A Pin 3 E C Package Ordering Code

Contextual Info: PD-9.1145A kitemational kjr]Rectifier IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c e s = 600V • Short circuit rated -10ps @125°C, VGE = 15V • Switching-loss rating includes ail "tail" losses

siemens igbt

Contextual Info: SIEMENS SGP20N60 P relim inary data IGBT • Latch-up free • Avalanche rated P in i Pin 2 G Ul Type 600V SGP20N60 Pin 3 C E b Package Ordering Code 20A TO-220 AB Q67040-A . . . . Maximum Ratings Symbol Values LU Parameter 600 Collector-emitter voltage Coilector-gate voltage

Contextual Info: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a

Contextual Info: International IOR Rectifier pd-o.usqa IRG4BC30F PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT F eatures • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

RG-910

Abstract: 2mb1100 2MBI100PC-140 ic l00a M233
Contextual Info: 2MBI100PC-140 IG B T M o d u le s IGBT Modules P s e rie s 1400V/100A 2 in one-package • Features • Small temperature dependence of the turn-off switching loss • Easy to connect in parallel •W ide RBSOA square up to 2 times of rated current and high shortcircuit withstand capability

Contextual Info: PD - 9.1654A International I R Rectifier IR G 4 B C 4 0 W INSULATED GATE BIPOLAR TRANSISTOR Features c • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies

Contextual Info: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor D-ansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module

Contextual Info: PD -9.1656B International I R Rectifier IRG4PC40W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power • • • • V ces = 6 0 0 V Supply and P F C power factor correction applications Industry-benchmark switching losses improve

12n120

Abstract: TO247AE
Contextual Info: MOTOROLA Order this document by MGW12N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet Insulated G ate Bipolar TVansistor MGW 12N120 N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage

G4PC30F

Abstract: G4PC30 g4pc st igbt driver bt 13b S/BIP/SCB345100/B/30/G4PC30F
Contextual Info: International TOR Rectifier PD - 9.1459A PRELIMIN IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Fast: O ptim ized fo r m edium operating frequencies 1-5 kHz in hard sw itching, >20 kH z in resonant m ode . • G eneration 4 IG BT design provides tig hte r

Contextual Info: TO SHIBA MG15Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG15Q6ES50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: PD -91752 International I R Rectifier IRG4IBC20UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE F e a tu re s • 2.5kV, 60s insulation voltage © • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating

Contextual Info: International Bgj]Rectifier_ PD - 5.028 CPU165MF IGBT SIP MODULE Fast IGBT Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • H EXFRED soft ultrafast diodes • O ptim ized for medium operating frequency 1 to 10kHz

Contextual Info: PD - 9 .1 4 5 5 A International I R Rectifier IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • S ta n d a rd : O p tim ize d fo r m in im u m saturation Vces = 600V v o lta g e an d low operating fre q u e n c ie s < 1 kH z

BT 815 transistor

Abstract: BT 815 600v bt 109 transistor
Contextual Info: International Rectifier I R PD -91784 IRG4BC10SD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Standard Speed CoPack IGBT • E xtrem ely low vo lta g e drop 1.1 Vtyp. @ 2A • S -S eries: M inim izes po w e r d issipa tion at up to 3

C943 transistor

Abstract: DI 944 c939 transistor transistor c939 transistor C938
Contextual Info: P D - 9.1081 International ^R ectifier IRGPC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 600V • Short circuit rated -1 Ops @ 12 5 °C , V GE= 15V • Switching-loss rating includes all "tail" losses

1117 S Transistor

Contextual Info: TO SHIBA GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10±0.3 03.2 ±0•2 2.710.2 m The 3rd Generation Enhancement-Mode High Speed : tf = 0.30,«s Max. (Iq = 5A)