VQE 14 E Search Results

VQE 14

Abstract: igbt module bsm 300
Contextual Info: euoec F BSM 300 GA 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 300 GA 120 DL 1200V 550A h Package Ordering Code SINGLE SWITCH 1

Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V

vqe 14 E

Abstract: vqe 13 e vqe 13
Contextual Info: euoec F BSM 200 G AL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A h Package Ordering Code HB 200GAL

eupec module igbt

Contextual Info: euoec F BSM100 G AL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 100 GAL 120 DN2 1200V 150A h Package Ordering Code HALF BRIDGE GAL 2

igbt BSM 300 GA 120

Abstract: vqe 14 d VQE 23 E
Contextual Info: euoec BSM 300 GA 120 DN2 F IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE Package Ordering Code BSM 300 GA 120 DN2 1200V 430A SINGLE SWITCH 1 C67076-A2007-A70 BSM 300 GA 120 DN2 S

transistor C710

Abstract: C712 transistor diode C710 transistor C715 c714 C715 diode diode c716 c714 diode c710 LE C716
Contextual Info: bitemational ^Rectifier PD - 9.1112 IRGPC30UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c es = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

Contextual Info: FF 400 R 06 KL 2 Thermal properties Therm ische Eigenschaften 0,0345°C/W DC, pro Baustein / per module 0,069 °C/W DC, pro Zweig / per Arm 0,02 °C/W pro Baustein / per module 0,04 °C/W pro Zweig / per Arm Transistor Transistor Elektrische Eigenschaften

vqe 14 E

Abstract: BSM75GAL120DN2 BSM75GAR120DN2 vqe 14 D VQE 14 C
Contextual Info: euoec F BSM 75 G AL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type VCE BSM 75 GAL 120 DN2 1200V 105A h Package Ordering Code HALF BRIDGE GAL 1 C67076-A2011-A70

IRGKI115U06

Abstract: C779 LC115
Contextual Info: PD-9.963B bitem ational [^ R e c tifie r IRGKI115U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

Contextual Info: euoec BSM150GB170DN2 E3166 F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • on,min = "10 Ohm Type BSM150GB170DN2 E3166 VbE h 1700V 220A Package Ordering Code

Contextual Info: FF 400 R 06 KL 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Thermal properties 0,0345°C/W 0,069 °C/W 0,02 °C/W 0,04 °C/W DC, pro B a u ste in /p e r module DC, pro Zweig /p e r Arm pro Baustein / per module Electrical properties

vqe 24 e

Abstract: vqe 24 d
Contextual Info: euoec F BSM 20 GD 60 DL IGBT Power Module Prelim inary data • 600V NPT Technology • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE h Package O rdering Code BSM 20 GD 60 DL

switching TRANSISTOR mosfet 30V 40A

Abstract: IRGB440U
Contextual Info: International IlftRl Rectifier PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency cun/e

transistor KF

Abstract: diode 182
Contextual Info: FF 100 R 12 KF Therm ische Eigenschaften Therm al properties Rthjc DC, pro Baustein / per module 0,075 DC, pro Z w e ig / per arm 0,15 RthCK pro Baustein / per module 0,04 pro Zweig / per arm 0,08 Transistor Transistor Elektrische Eigenschaften Electrical properties

bsm15gd120dn2e3224

Contextual Info: B S M 1 5 G D 1 2 0 DN2 e u o e c F IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Package Ordering Code BSM 15 GD 120 DN2 VbE 1200V 25A ECONOPACK 2 C67076-A2504-A67

307d

Abstract: vqe 14 E P 307 diode 307d
Contextual Info: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code

C818

Abstract: rq20 C814 c815
Contextual Info: PD-9.953B bitemational lüIR ectifier IRGTI050U06 "HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

transistor C946

Abstract: C948 c948 transistor C946 C947 c 948 BR c945 transistor diode c946 transistor c951 c947 transistor
Contextual Info: International tor]Rectifier P D - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • Ie Short circuit rated -1 Ops @ 125°C, V q E = 15V Switching-loss rating includes all "tail" losses

vqe 13

Abstract: VQE14 vqe 14 E vqe 14 VQE11 VQE 12 vqe13 VQE 14 C Siebensegmentanzeige VQE 11
Contextual Info: FUNKAMATEUR-Bauelementeinformation VQE11/13 VQE12/14 Mehrstellige Lichtschachtbauelemente rotstrahlend, Ziffernhöhe 12,7 mm TG L 55110 V EB W erk für Fernsehelektronik Berlin Kurzcharakteristik Grenzwerte P aram eter B edingungen K urzzeichen m ax. D urch laß g leich stro m 1

Contextual Info: PD-9.969B kitemational [^ R ectifier IRGNI050U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT High Side Switch - • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

FZ 300 R 06 KL

Contextual Info: FZ 400 R 06 KL 2 Therm ische Eigenschaften Therm al properties 0,089 °C/W DC, pro Baustein / per module R th J C Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 400 A tp = 1 ms

1BW TRANSISTOR

Contextual Info: 7=3 4’ 3 / FF 75 R 06 KF EUPEC S5E 34035^7 Rthjc Elektrische Eigenschaften 00Q 02G 5 Thermische Eigenschaften Transistor Transistor D Electrical properties RthCK 1 b 1! MUREC Thermal properties 0,175 °C/W 0,35 °C/W 0,06 °C/W 0,12 °C/W DC, pro Baustein / per module

1BW TRANSISTOR

Abstract: transistor 79t
Contextual Info: 7 - 3 9 - 3 / F 300 R 10 K SSE EUPEC » • 34032^7 Q 000252 7TT «U PEC Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 1000 V 300 A 600 A 2000 W V ge 20 V Inversdiode Inverse dlode

25r06

Contextual Info: FF 25 R 06 KF 2 Therm ische Eigenschaften Transistor Transistor R thjc Elektrische Eigenschaften Electrical properties RthCK H ö ch s tz u lä s s ige W e rte V ces M axim u m rated va lu e s 600 V 25 A lc Thermal properties °C /W 0,5 DC, p ro B a u ste in / p e r m od u le