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    Texmate Inc

    Texmate Inc PM-45X-DCV-PS05

    Digital Panel Instrumentation; |Texmate PM-45X-DCV-PS05
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark PM-45X-DCV-PS05 Bulk 15 1
    • 1 $239.00
    • 10 $239.00
    • 100 $239.00
    • 1000 $239.00
    • 10000 $239.00
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    VPS05 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MARKING 74s

    Abstract: PF 7004S
    Contextual Info: SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection • Voltage clamping • High-level detecting and mixing n y W C 1/A 2 C2 R n fi è 3 2 A1 1 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		70-04svps05604q62702-a3468ot-363+2marking 74spf 7004s PDF

    mmic-amplifier

    Abstract: VPS05178 337 BGA
    Contextual Info: BGA 312 Silicon Bipolar MMIC-Amplifier 3  Cascadable 50 -gain block 11 dB typical gain at 1.0 GHz 4  9 dBm typical P -1dB at 1.0 GHz  3 dB-bandwidth: DC to 2.0 GHz 2 1 RF IN RF OUT/Bias 1 VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking BGA 312


    Original     		vps05178eha07312ot-143oct-26-1999+2mmic-amplifier337 bga PDF

    BCR162

    Contextual Info: BCR162 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		bcr162vps05161eha07183nov-29-2001 PDF

    marking WPs

    Abstract: BCR192T SC75
    Contextual Info: BCR192T PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R 1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type BCR192T Marking WPs 1=B Pin Configuration 2=E 3=C Package SC75


    Original     		bcr192tvps05996eha07183dec-13-2001+2marking wpssc75 PDF

    BCR141T

    Abstract: SC75
    Contextual Info: BCR141T NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k, R2=22k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR141T WDs Pin Configuration 1=B 2=E Package 3=C SC75


    Original     		bcr141tvps05996eha07184jul-13-2001+1sc75 PDF

    BFN16

    Abstract: BFN17 BFN18 BFN19
    Contextual Info: BFN16, BFN18 NPN Silicon High-Voltage Transistors 1  Suitable for video output stages in TV sets and 2 switching power supplies 3  High breakdown voltage  Low collector-emitter saturation voltage  Complementary types: BFN17, BFN19 PNP 2 VPS05162 Type


    Original     		bfn16bfn18bfn17bfn19+2vps05162aug-29-2001 PDF

    BCR583

    Contextual Info: BCR583 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR583 XMs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		bcr583vps05161eha07183dec-13-2001 PDF

    BCR569

    Contextual Info: BCR569 PNP Silizium Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1 = 4.7k 2 C 3 1 R1 1 2 B E VPS05161 EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original     		bcr569vps05161eha07180dec-13-2001 PDF

    BCR183

    Contextual Info: BCR183 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR183 WMs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		bcr183vps05161eha07183dec-13-2001 PDF

    BFG194

    Abstract: VPS05163
    Contextual Info: BFG 194 PNP Silicon RF Transistor  For low distortion broadband amplifiers in 4 antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		vps05163bfg194ot-223oct-27-1999 PDF

    BCP29

    Abstract: BCP49 VPS05163
    Contextual Info: BCP29, BCP49 NPN Silicon Darlington Transistors  For general AF applications 4  High collector current  High current gain  Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29


    Original     		bcp29bcp49bcp28/48vps05163+2eha00009ot223 PDF

    BCR553

    Contextual Info: BCR553 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=2.2k, R2=2.2k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR553 XBs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		bcr553vps05161eha07183jul-23-2001 PDF

    BG3230

    Abstract: BG3230R VPS05604
    Contextual Info: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes


    Original     		bg3230bg3230rvps05604eha07215+2ot363feb-27-2004 PDF

    BCR08PN

    Abstract: VPS05604
    Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


    Original     		bcr08pnvps05604ot-363eha07193+3eha07176ot363jul-12-2001 PDF

    BAT60B

    Contextual Info: BAT60B 2 Silicon Schottky Diode 1  High current rectifier Schottky diode with low V F drop  Low voltage, low inductance  For power supply VPS05176  For detection and step-up-conversion Type BAT60B Marking white/5 Pin Configuration 1=C 2=A Package SOD323


    Original     		bat60bvps05176od323jun-22-2001 PDF

    BBY51-03W

    Contextual Info: BBY51-03W Silicon Tuning Diode 2  High Q hyperabrupt tuning diode 1  Designed for low tuning voltage operation  For VCO's in mobile communications equipment VPS05176 Type Marking Pin Configuration Package BBY51-03W H 1=C SOD323 2=A Maximum Ratings Parameter


    Original     		bby51-03wvps05176od323jul-04-2001+2ehd07128ehd07129 PDF

    SOT143 DUAL DIODE

    Abstract: S11 SCHOTTKY diode BAT15-099 VPS05178
    Contextual Info: BAT15-099 Silicon Dual Schottky Diode  DBS mixer applications up to 12 GHz 3  Low noise figure  Low barrier type 4 2 1 4 VPS05178 1 3 2 EHA07011 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099 S5s Pin Configuration


    Original     		bat15-099vps05178eha07011ot143+4ehd07083jul-31-2001sot143 dual diodes11 schottky diode PDF

    BCR521

    Contextual Info: BCR521 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original     		bcr521vps05161eha07184jun-29-2001 PDF

    VPS05178

    Abstract: Q62702-F1487 marking code g1s
    Contextual Info: BF 1012 Silicon N-Channel MOSFET Tetrode 3 • For low noise, high gain controlled input stages up to 1GHz 4 • Operating voltage 12V • Integrated stabilized bias network 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		vps05178q62702-f1487ot-143sep-09-1998+2200mhzmarking code g1s PDF

    bat18 a2

    Abstract: top marking c2 sot23 BAT18 BAT18-05 A2 SOT23 AUS SOT23 c2 sot23 BAT18-04 top marking 3c sot23 BAT18-04 sot23
    Contextual Info: BAT18.BAT18-05 Silicon RF Switching Diode 3  Low-loss VHF / UHF switch above 10 MHz  PIN diode with low forward resistance 2 1 BAT18 BAT18-05 BAT18-04 3 3 1 3 1 2 1 2 EHA07005 EHA07002 VPS05161 EHA07004 Type Marking Pin Configuration Package BAT18 A2s


    Original     		bat18bat18-05bat18-04eha07005+10eha07002vps05161eha07004bat18 a2top marking c2 sot23a2 sot23aus sot23c2 sot23top marking 3c sot23bat18-04 sot23 PDF

    BCR569

    Contextual Info: BCR569 PNP Silizium Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1 = 4.7k 2 C 3 1 VPS05161 R1 1 2 B E EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original     		bcr569vps05161eha07180jul-23-2001 PDF

    BB640

    Contextual Info: BB640 Silicon Variable Capacitance Diode 2  For Hyperband TV / VTR tuners, Bd I 1 VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB640 red S 1=C SOD323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage R  5k


    Original     		bb640vps05176eha07001od323+2jul-05-2001ehd07045 PDF

    EHA07182

    Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
    Contextual Info: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s


    Original     		vps05604eha07182ot-363tstg10+8oct-07-1999ehb00068ehb00065bav70s6c125a2 diodec2a26marking 5a2 PDF

    BCR133

    Contextual Info: BCR133 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR133 WCs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		bcr133vps05161eha07184jul-13-2001 PDF