VOLTAGE SENSITIVE RESISTOR SIEMENS Search Results

BFP420 application notes 900MHz

Abstract: SCT598-Package BFP420 application notes BFP420 BGC420 Q62702-G0092 500R 134fF IC LP7 3770E-01
Contextual Info: BGC420 Self-Biased BFP420 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe

2Q394

Abstract: rx 3152 BGC405 A12 marking ikr 251 50W rf power transistor 100MHz 500R BFP405 Q62702-G0091 TL18
Contextual Info: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe

Contextual Info: SIEMENS 2.1 Magneto Resistors Fundamentals Magneto resistors are magnetically influenced resistors of InSb/NiSb material which work according to the Gauss effect. The charge carriers which flow through the semiconductor material experience a sideways action in a traverse magnetic field by

Contextual Info: SIEMENS IRM3000/3003/3015/3100 3 V Infrared Data Transceiver Preliminary Dimensions in inches mm APPLICATIONS • Wireless Computer and Peripheral Communications • Wireless Computer and Telephone Communications > Interactive TV and Remote Control IROataCOM

THX 230

Contextual Info: SIEMENS IRM6000/6002 Infrared Data Transceiver Prelim inary Dimensions in inches mm HttMOOO .360 <9.141 .059 (1.’50) (3.81) _ L Ö .101 i T 112(2.84) (4.09) .008 (0 .20) FEA TU RES • Sm all PackageSize: 4.3 m m x 4.1 m m x 9.4 m m • Com patible w M i IrD A Specifications

ir led

Contextual Info: SIEMENS IRM6000/6002 INFRARED DATA TRANSCEIVER Preliminary A current limiting resistor should be used between the LED anode and M x See Table 1 for recom mended values. For operation at 2.7 V, the LED anode should be tied directly to Vc c Table 1. Operating Voltage VCq

Contextual Info: SIEMENS IRM6000/6002 Infrared Data Transceiver P re lim in a ry Dimensions In inches mm FEATURES • Small Package Size: 4.3 mm x 4.1 m m x 9.4 m m • Compatible w ith IrDA Specifications • IrDA Data Rates up to 115.2 Kb/s • Wide Dynamic Range • Slim Package for Telephonic Applications

IRF 1450

Abstract: km 1667 km 1667 datasheet mmic marking code j
Contextual Info: SIEMENS CMY 91 GaAs MMIC Datasheet * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low power consumption 1 mA typ. * Single positive supply voltage * Operating voltage range: 2.7 to 6 V * Miniature package MW6 based on SOT23

Contextual Info: SIEMENS CGY 31 GaAs MMIC Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated Operating voltage range: 3 to 6 V 50 Q input/output; R L in f t L o u t > 10 dB Gain: 18 dB at 1.6 GHz Low noise figure: 4 dB at 1.6 GHz

PMB2307

Contextual Info: SIEMENS PMB 2307R PLL-Frequency Synthesizer Preliminary Data CMOS 1C Features • • • • Low operating current consumption typically 3.5 mA High input sensitivity, high input frequencies (220 MHz) Extremely fast phase detector without dead zone Linearization of the phase detector output by current

Contextual Info: SIEMENS CMY 91 GaAs MMIC • • • • • • GaAs mixer with integrated IF-amplifier for mobile communication Frequency range 0.8 GHz to 2.5 GHz Very low power consumption 1 mA typ. Single positive supply voltage Operating voltage range: 2.7 to 6 V Miniature package MW6 based on SOT23

LH1525

Contextual Info: LH1525 LH1Ç26 SIEMENS 1 Form A, Duali Foirn A High-Voltage Solid State Relays FEATURES d e s c r ip t io n Load Voltage Load Current ac/dc dc Typical Rqn Typical Operating Current ton/tof (max Cufrent Limit: ac/dc The LH1525 and LH1526 relays as SPST normaily.open switches

Contextual Info: SIEMENS PMB 2307R Table of Contents Page 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 O verview .2 Features. 2

"if amplifier" siemens

Abstract: M2 MARKING SOT23 SSFF V1F p B82412-A3221-K B82412-A3471-K Q62702-M9 B82412-A3270-M IRF 1450
Contextual Info: • û 2 3 5 b ü S □ □ cî ü7DD u aA s M M iu SIEMENS T23 ■ CMY 91 D a t a s h e e t * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low power consumption 1 mA typ. * Single positive supply voltage

PMB2307R

Abstract: PMB2307 SIEMENS 2306 DECT siemens dect pmb 30MHZ "Mobile Communication ICs" PMB2307 equivalent
Contextual Info: SIEMENS PMB 2307R PLL-Frequency Synthesizer Preliminary Data CMOS 1C Features • • • • Low operating current consumption typically 3.5 mA High input sensitivity, high input frequencies (220 MHz) Extremely fast phase detector without dead zone Linearization of the phase detector output by current

PSB4400P

Abstract: PSB4400-P power supply luna siemens power supply luna 2 siemens Q67000-A6074 pj 75 sx 34 ITP0449J ITP04706 P-DIP-18 P-DSO-20
Contextual Info: bSE D • ÖSBSbüS Ü Ü S n 2 7 S3S « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF Standard Speech Circuit SSC PSB 4400-P;-T Prelim inary Data Bipolar 1C Features • • • • • • • • • • • • Operation down to a DC line voltage of 1.6 V

of mosfet BUZ 384

Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
Contextual Info: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range

GMA marking

Contextual Info: SIEMENS BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 G H z at collector currents from 70mA to 130mA • Power amplifiers for D ECT and PCN systems • Integrated emitter ballast resistor

Contextual Info: SIEMENS BXY 44P HiRel Silicon PIN Diode Features • HiRel Discrete and Microwave Semiconductor • Current controlled RF resistor for RF attenuators and switches • High reverse voltage • Matched diode - pair • Hermetically sealed microwave package @sa qualified

marking code AC sot 23-5

Abstract: marking BFG
Contextual Info: SIEMENS BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor

BFG235

Contextual Info: SIEMENS BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA t<5 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor

Siemens pulse sequence

Abstract: power supply siemens s5 Siemens diode Ssi
Contextual Info: SIEMENS mmmmmmwm•■tWhP CGY 191 GaAs MMIC • • • • • Dual mode power amplifier for CDMA /TDMA portable cellular phones 29 dBm linear output power PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match

Contextual Info: SIEMENS BFG135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor

Marking code 44t

Contextual Info: SIEMENS BXY44 HiRel Silicon PIN Diode Features • HiRel Discrete and Microwave Semiconductor • Current controlled RF resistor for RF attenuators and switches • High reverse voltage • Hermetically sealed microwave package esa qualified • ESA/SCC Detail Spec. No.: 5513/030