SSFF Search Results

Contextual Info: ROHM CO L T 3 40E » • TflSflT'H ODGBT^S 3 BiRHM OA^SSffl IC /IC s for OA Applications B A @ 5 S 7 I C BA6567K r- Speech Network • W F ^ Ü O /D im e n s io n s U n it : mm) BA6567K1J, 1. 14.0 ± 0.3 $ W iffi^ 3 2 p in (HOM), 33pin (LS) < 7 ) ü § £ fr tt( C i t; J\>

J514

Abstract: J514-5
Contextual Info: Bridge Diode Surface Mounting Device • *W fN -ä s H O U T L IN E D IM E N S IO N S SINBB80 800V 1A •/Müsmda" vtr—v •S?F^PH3.4mm^SSffi •s tta æ w s R A TIN G S Absolute Maximum Ratings * I Item Storage Temperature » -s-a sfis Operating Junction Temperature

Mosfet

Abstract: SSFM2506L
Contextual Info: SSFM2506L 25V N-Channel MOSFET Main Product Characteristics: 25V VDSS SS 2506 SSFFM M 250 8 SSFM2506L RDS on 6mohm ID 60A T O-252 D PAK M arking and pin assignm ent Features and Benefits:       Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications

Contextual Info: Preliminary % TAIWAN SEMICONDUCTOR RoHS COMPLIANCE SBR201OOCT - SBR20200CT 20.0 AM PS. Schottky Barrier Rectifiers TQ-220AB Features <r <r P l3 « c material used carries Underwriters Laboratory CI&SSfflC&Bo'iS 94V-0 Meta I silicon junction, majority carrier conduction

Contextual Info: -j'j vvv'ds-v 7:n.7,ii>'fy:ÿ'fy§ë. Bridge Diode Dual In-Line Package OUTLINE DIMENSIONS S1NBB80 800V 1A 43 f i • / M Ü D IP /W ir - S ; •S?F^PH3.4mrn^SSffi RATINGS # îf ë $ ÎÎt ^ 5 È Î& Absolute Maximum Ratings fêÂw&v'ilrê-T /= 2 5 'C 1

VN10KM

Abstract: VN0610L
Contextual Info: VN0610L, VN10KE, VN10KM m SSffA N-Channel Enhancement-Mode MOS Transistors, Zener Gate Protected_ PRODUCT SUMMARY TO-92 TO-226AA PART NUMBER V (BR)DSS (V) *DS(ON) ( il) (A) PACKAGE VN0610L 60 5 0.27 TO-92 VN10KE 60 5 0.17 TO-52 VN10KM 60 5 0.31 TO-237

DG425

Contextual Info: -319 DG425 — Low-Power High-Speed Latch ab le C M O S Analog Sw itch es • SSffi m V 'v i£ ö = ; «— *' JÍÍ.IIVL m a m 1 s, g IN , i3 V - s. _“3 WR -p p rsi—r y — R S °- QND s3 El s4 U ü d4 H Ü ] v+ r s E Î3 d2 [? IN , vL in 2 S ,o - D, [T

Contextual Info: FINAL COM’L: -7/10/12/15 IND: -10/12/14/18 VANT1S MACH 4-128/MACH4LV-128 High-Performance EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS ♦ ♦ ♦ ♦ ♦ ♦ 100 pins in PQFP and TQFP 128 macrocells 7.5 ns tpD Commercial, 10 ns tPD Industrial

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

Contextual Info: ERB93-02 1.5A : Outline D raw ings LOW LOSS SUPER HIGH SPEED RECTIFIER : Features • ffiV F : M arking Low V f :m * 7 - 3 - K S uper high speed sw itchin g. Color code : S ilv e r À •SSffiS High reliability by planer design. S u o ro < : : < 4 ' Ji «

4r3ti

Contextual Info: 4R3TI60Y-080 * - K -9-T'; • % 'k = Z '> 3 . - V ’. Outline Drawings DIODE and TYRISTOR MODULE : Features • # 7 X /\''> ^ ~ y 3 > f 7 ^ • Glass Passivation Chip Easy Connection • l&WiWt Insulated Type • d i/d t I f £*>'";*; £ v.' • d v /d t

Contextual Info: HITACHI V isrni-mmmv— -iy^"j07s. » ? muflí R i s s a i tt- k . . y y j ^ - T A '^ v ^ fflP lN ^ 'i'T l'- K . T"j t %-^fflPIN^'t'Tf-K.

"Analog Switches"

Abstract: MAX341 105fl
Contextual Info: - MAX34 I ^ High-Voltage CMOS/DMOS Analog Switches iS mm m. mm v +/v* R on AT Vs = V+ +20V/-20V +30V/-30V ♦40V/-40V +50V/-50V +40V/GND ♦60V/GND 12m io s n 92 fl 84 a 127H 105fl X'f -yfSPST 2 39n 36n 32n 30 n 39n 36 n on «: V+ V- ‘/"f-ON. H W - f i M F F .

Wireless Camera LCD Monitor Receiver/Recorder

Abstract: transmitter and receiver MINI CAMERA cell phone camera module Audio Communication Using Fiber Optic Cable infrared based security alarm wireless video camera construction LASER based Four ZONE security system optical input to rca output circuit sony ccd image sensor industrial security system with auto dialer
Contextual Info: STRIKEZONE Effective Multilayer Defense St StrikeZone™ enables any facility to integrate all of its security and safety de devices within a single system. StrikeZone provides for true centralized mo monitoring, which results in faster reporting, threat assessment and emerge

Contextual Info: h K y Photosensor Units Transmittive Type ON15Q1 • ft ■ Outline m ON1501 l i , ¡SSffl , S i R i B t t w * The ON 1501, is a small, light weight, high precision, high re lia b ility photo sensor unit which am plifier built in a h -tr >-*f t L - C £ < I t f f l

d00030

Abstract: 2SA1741 T108 BH RV transistor
Contextual Info: / n° 7 - Silicon P o w er Transistor 2 S A 1 7 4 1 I i f f l 2 S A 1 74 1 ^ T L o w V C E s a t T ' h p E 3- — 9 < T ) t '< i: tz ' - t 'C O W ^ ^ iO L T ^ S T 'D L T H C / D J ê C a ê t i ^ ^ ^ h ' s 9 ÿ > v ? X * ? T ? t j fl- J fê y - 10.0 + 0 .3

FZH 191

Abstract: SRF 3733 lzl 24h fzh 111 SRF 7068 TYA 0298 FZH 161 LOGIC CIRCUIT FZH 165 FZH 261 FZH 171
Contextual Info: r M O S I M Ä 0 S& M O S In tegrated C ircu it « PLL •a > ^q- 1 7 6 8 t IDC PLL > >-tz+f-< + f £ r t / & V' • - 7 1 ? azi > h a - ÿ V T o 4 t'7 h • C P U « , 4 t í -y h M5iJAfli:, f f i l f t * . « » ( B t T - y b • T Z b. * -V U - • 7 7 ^ t 7

diode 1.5 ke 36 ca

Abstract: 2SK1010-01 T151
Contextual Info: ÎSK1010-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S lOutline Drawings • Features • High speed switching • l ow on-resistance 03.6*?' • [Jo secondary breakdown • l ow driving power • High voltage J t • ' /gss= ±30V Guarantee

vlt 2900

Abstract: uPD78P334 UPD78P334LQ 78p334 78P334LQ IC-8075 s13s3 T02I TFK 082 MPD78P334
Contextual Info: • 5/— h M osm m m s& M O S Integrated Circuit /¿PD78P334 1 6 / 8 tf "y V • > > //PD 78P334 It, "y~? • v> f ^ □ ¿«PD 78334C Q rtg|$v*;? ROM •7> • i '- f A P R O M S S . B , —J tf c 'I t fc, EPROM S n M i, b° zl — 9 • ? -f A PROM i f c t i EPROM U S # f t x . / c n nn 'C f „

JRC IC

Abstract: JRC OPamp IC JRC opamp JM4558 rgb led driver NJM4558 DKSAA power supply switching opamp jrc
Contextual Info: Approach for Operational Amplifiers S i S i : ^ * S B 1 9 7 7 ^ N J M 4 5 5 8 U U - 7 . m 5 K ^ i a C D i'< y y y - □ > A 'L '- ^ s s s a < b L - r © D * - r o m ^ o ^ ' f y y ^ y t* 15 o s a « ic © iï D . a s . p c n ^ « g - * fi» ia » a » ♦ a * « » , » « « » » ¿ i^ o m w c f lW s n r a D * * - .

BA6473FP

Abstract: fdd motor driver FDD service 600rpm MMC 7PIN BA6472FP BA6471FP V11L 6PIN20
Contextual Info: O A iS fiffl IC /I C s for OA Applications ROHM CO LTD 40E B A6471FP/BA6472FP/BA6473FP D 00040R2 HRHM — FD D Z £ ° > K M / * - * K 7 < / < B A 6 4 7 1 F P /B A 3 4 7 2 F P Motor Driver for FD D S pindle B M 473FP 7-S 2 -Z 2 -C ,l * BA6471FP, BA6472FP, BA6473FP f i ,

D2096

Abstract: 5MHz VCO CQA03 AD6489 BPM160 BPM-180 N5435 BPM140 LA7457W SQFP64
Contextual Info: ì È 3 t 3 - F No, N 5 4 3 5 L A 7 4 5 7 W ïê S fb tlS S fc fc fc i:« « Â f f lÆ S â a v 'J : I X A f^ ic T O L fe lC T -ifc S . #tÜ • BPFfci* y 5 ^ä-FMlE •« * * Æ t t / T a = 25°C »«H * n iM is a « Vcc «wax Pdm ax Topr Tstg 300

SJ109285

Abstract: JACS-10580 ST1W008S4 E52SB ST1W008S4G
Contextual Info: \/ 98Z60LPS DATE DCN NO. 1 5/DEC/2009 069162 REV. C O N 9 N IMVMQ 3Ê S F*3# DESCRIPTION fi ä DR. CHK. CHANGED FORM OF CONNECTOR APPD. APPD. M. SH IMADA 2. 3 ±0.3 A ESI E52SB 53 50 EH S3 53 SB ER ESI ! tO. 4 ±0.05 0380 ±0.2 NOTE 2 SECT. B-B SCALE 2:1)

TTL RS422 Level Converter

Abstract: AN216 transceiver rs232 driver receiver RS-357 MIL-STD-188-114 DS75124
Contextual Info: National Semiconductor Application Note 216 Don Tarver December 1978 FO R W A RD Not the least of the problems associated with the design or use of data processing equipment is the problem of providing for or, actually, interconnecting the differing types and models of equipment to form specific proces­