VM32 Search Results

SM32200K

Abstract: IS42SM32200K
Contextual Info: IS42SM/RM/VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

Contextual Info: VM3200 * T C In c . u T r V'a/ue f/i Customer" 2 OR 4-CHANNEL, 3.3 TO 5-VOLT, TWO-TERMINAL, THIN-FILM/MIG HEAD, READ/WRITE PREAMPLIFIER August. 1995 • • • • • • • • High Performance - Read Gain = 300, 200 or 150 V/V - Input Noise = 0.48nV/VHz Typical

ODD44F

Contextual Info: Model VM32PAFF Programmable Amplifiers with Fixed Frequency Filters VME Board 32 Channel Description Frequency Devices’ Model VM32PAFF comprises a family of VMEbus amplifier/filter boards offering software programmable differential amplifiers combined with

SM32800E

Abstract: IS42RM32800E
Contextual Info: IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

Contextual Info: vÊ É Ê VV'a/ue TC In c . the Customer VM327R PRELIMINARY FEATURES • High-Performance - Low Noise = 0.75nV/VHz typical - Input Capacitance = 11 pF typical - Read Gain = 120V/V typical - Differential Head Swing = 24Vp-p minimum - Iw Current Range = 10-60mA

VM32FF

Abstract: D-Sub 62-pin male Connector 44PIN male connector 1000X DP72 160 PIN VME CONNECTOR FEMALE VME 160 connector
Contextual Info: Model VM32FF 32 Channel Fixed Frequency VME Filter Board Description Frequency Devices model VM32FF comprises a family of VMEbus filter boards offering 32 channels of fixed frequency, linear analog filtering in a single width B-sized 6U form factor. VM32FF boards receive up

IS42SM32200K

Contextual Info: IS42SM/RM/VM32200K Preliminary Information 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

IS42RM32400G

Contextual Info: IS42SM/RM/VM32400G Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42RM32800E

Contextual Info: IS42/45SM/RM/VM32800E Advanced Information 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

SM32400G

Abstract: IS42SM32400G-75BI is42sm32400g 4Mx32 BGA VM32400G IS42VM32400G-75BLI IS42RM32400G-75BI IS42RM32400G
Contextual Info: IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

SM32160E

Abstract: IS42SM32160E-75BLI
Contextual Info: IS42/45SM/RM/VM32160E Advanced Information 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42RM32800E

Contextual Info: IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

Contextual Info: MAY s ; VM3200 VTC Inc. 3.3-VOLT, TWO-TERMINAL, THIN-FILM MIG HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY CONNECTION DIAGRAMS FEATURES • High Performance - Read Gain = 300, 200 oM 50 V/V - Input Noise = 0.55nV/VHz Typical - Head Inductance Range = 0 . 2 - 5 pH

VM32PAFF

Abstract: D-Sub 78-pin female Connector vme fdi
Contextual Info: Model VM32PAFF Programmable Amplifier With Fixed Frequency Filter 32 Channel VME Module USER’S MANUAL We hope the information given here will be helpful. The information is based on data and our best knowledge, and we consider the information to be true and accurate. Please read all

VM32PA2.0

Abstract: D-Sub 44-pin female Connector D-Sub 44-pin male Connector D-Sub 78-pin female Connector "Signal Conditioning" D-Sub 78-pin male Connector VME 160 connector
Contextual Info: Model VM32PA2.0 Programmable Amplifier >100 kHz to 2.0 MHz VME Board 32 Channel Description Frequency Devices’ Model VM32PA2.0 comprises a family of VMEbus amplifier boards offering software programmable differential amplifiers in a single width B-size 6U VME form factor. VM32PA2.0 boards

VM32PA

Abstract: D-Sub 44-pin male Connector D-Sub 78-pin female Connector D-Sub 78-pin male Connector VME 160 connector
Contextual Info: Model VM32PA Programmable Amplifier VME Board 32 Channel Description Frequency Devices’ Model VM32PA comprises a family of VMEbus amplifier boards offering software programmable differential amplifiers in a single width B-size 6U VME form factor. VM32PA boards

IS42SM32200K

Contextual Info: IS42SM/RM/VM32200K Advanced Information 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are

IS42RM32400G

Contextual Info: I S42/ 45SM/ RM/ VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These I S42/ 45SM/ RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42RM32100C

Abstract: IS42RM32100C-75BLI IS42SM32100C
Contextual Info: IS42SM32100C IS42RM32100C VM32100C Advanced Information 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

Contextual Info: IS42/45SM/RM/VM32800K Preliminary Information 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800K are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

IS42VM32800E

Abstract: IS42VM32800E-75BLI IS42SM32800E-75BLI IS42RM32800E
Contextual Info: IS42/45SM/RM/VM32800E Preliminary Information 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

Contextual Info: IS42/45SM/RM/VM32800K 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800K are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

Contextual Info: V T C In c. V a lu e th e C u s to m e r VM327R 10-CHANNEL, CENTER-TAPPED FERRITE, THIN-FILM AND MIG HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATU R ES July, 1991 CONNECTION DIAGRAMS THREE TERM INAI READ/WRITE PREAMPS • H igh-Performance - Low Noise = 0.75nV/VHz typical

Contextual Info: # H vtc.„c Value the C ustom er VM3200 2 OR 4-CHANNEL, 3.3 TO 5-VOLT, TWO-TERMINAL, THIN-FILM/MIG HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEA TU RES • • • • • • • D ESCR IPTIO N The V M 3200 is a high-perform ance, very low-power read/