VK2001 Search Results

14 pin LCD monocrome connector

Abstract: lcd ramdac capacitor bc series 10uf/63V toshiba lcd power board schematic LCD dots toshiba 320X240 LP29 CORE SED1354F hitachi lcd backlight schematic lcd 240 128 ts SED1354
Contextual Info: MF1072-02 ll er s o r e t ri n 54 13 ED Do a M t cs i h p a r S trix G o e C S D LC c Te c i hn a M al l a nu NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

Contextual Info: Prelim inary Inform ation This docum ent contains inform ation on a product under developm ent. The param etric inform ation are target param eters and aie subject to change. D istinguishing Features 200, 170 M H z O peration 8:1 M ultiplexed Pixel Ports 256 x 24 C olor Palette RAM

477A capacitor

Abstract: a477a
Contextual Info: Data Sheet March 1992 sA T & T ^ Microelectronics ATT20C478A/477A/475A CMOS RAMDACs Features Applications • 110/100/80/66/50 M Hz operation ■ Desktop, laptop, and notebook PCs ■ Powerdown to <3 mA typical ATT20C477A/475A ■ Screen resolutions (noninterlaced)

Contextual Info: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS F e a tu ie s 2 - 400 MHz 4 WATTS 28 VOLTS 14 dB MIN. AT 400 MHz

BIT 3195

Abstract: ATT20C409 att20c490 DG157S ramdac
Contextual Info: A Data Sheet May 1995 ART Microelectronics ATT21C499: 24-Bit Interface RAMDAC Dual Clock Synthesizers PrecisionDAC Technology Features Application Differences • 170/135 MHz speed grades The ATT21C499 uses a 68-pin PLCC package. The signal footprint around the perimeter of the ’499 is

RF MOSFET

Abstract: MRF173 MRF173CQ FML C16
Contextual Info: ^s.mi'Con.dacto'i ^P , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field Effect Transistors MRF173 MRF173CQ N-Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

5c1 zener diode

Abstract: 3C8 Ferrite Material 50G2L ATT22C498 22C498 DIODE JS.6 RAMDAC ATT20C409 g6 amd
Contextual Info: Data Sheet r m A T& T May 1995 ^ = 35? Microelectronics ATT21C499: 24-Bit Interface RAMDAC Dual Clock Synthesizers PrecisionDAC Technology Features Application Differences • 170/135 MHz speed grades The ATT21C499 uses a 68-pin PLCC package. The signal footprint around the perimeter of the ’499 is

KU 490-R

Abstract: ramdac ATT20C409-17M68 att20c409-17 ATT20C409 3C8 Ferrite Material
Contextual Info: Ddts Sheet June 1995 1 JCTbtüT ä A IS l Microelectronics ATT20C409: 16-Bit Interface RAMDAC Dual Clock Synthesizers PrecisionDAC Technology Features Description • 170/135 MHz speed grades — 170 MHz 2:1 multiplex 8-bit pseudocolor — 73 MHz true-color operation

ATT21C498

Abstract: D05003b VGA ramdac 3C8 Ferrite Material 3c8 ferrite bt ramdac philips ferrite 3C8
Contextual Info: Data Sheet June 1995 - -t _ = A T S T Microelectronics ATT20C408: 16-Bit Interface RAMDAC Dual Clock Synthesizers PrecisionDAC Technology Features Description • 170/135 MHz speed grades — 170 MHz 2:1 multiplex 8-bit pseudocolor — 73 MHz true-color operation

MRF327

Abstract: Johanson Piston Trimmer
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Pow er Field Effect T ran sistor MRF158 N-Channel Enhancement Mode Designed for wideband large-signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts

vk200 coil

Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON

RF MOSFETs

Abstract: "RF MOSFETs"
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF173* M RF173CQ The RF MOSFET Line RF P o w er Field E ffe c t Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 200 MHz

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Pow er Field E ffect Transistor N-Channel Enhancement Mode Designed for wideband large-signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 M Hz Performance Output Power = 2.0 Watts

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large-signal driver and output am plifier stages in the 3 0 -2 0 0 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 W atts

2865002402

Abstract: 6435 fet MRF136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF136 M RF136Y N -C hannel Enhancem ent-M ode MOSFETs . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.

2482 npn

Abstract: 2482 TRANSISTOR
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF326 . . . designed prim arily for w ideband large-signal output am plifier stages in the 100 to 500 MHz frequency range. • G uaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts

sd1902

Abstract: MRF166 J126
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 30-500 MHz. • Low Crss — 4.5 pF Vns = 28 V •

transistor c 2316

Contextual Info: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF323 The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 2 0 0 - 5 0 0 M H z frequency range. 20 W, 400 MHz RF POWER TRANSISTOR

spw 080

Abstract: LEM3225 CL-2M2012-900JT TKS 0603 FBM3216HS800-T ACB2012M-150-T LAL04TB 494LYF FBM2125HS420-T m5258
Contextual Info: CT Technologies - Cross Reference Competitor Part CTC Part 0402R CT0402CSF 0402CS-P CT0402CSF 0402CS L CT0402CSF 0402CS CT0402CSF 0402 CT0402CSF 555-0402 CT0402CSF PE-0402CD CT0402CSF 0402AS CT0402CSF ELJNK CT0402CSF GLZG CT0402CSF KQ0402 CT0402CSF KQT0402L

Contextual Info: m m m RF Products a Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features 2 - 400 MHz 4 WATTS 28 VOLTS 14 dB MIN. AT 400 MHz

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor