VISHAY MODEL 122 Search Results
VISHAY MODEL 122 Result Highlights (2)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
TPS6508700RSKR |
![]() |
PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 |
![]() |
||
TPS6508700RSKT |
![]() |
PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 |
![]() |
![]() |
VISHAY MODEL 122 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: Model Numbers VISHAY Precision Potentiometers Single Turn . . . . , . . . , . . . , . . . . . . . |
OCR Scan |
||
Contextual Info: V1SHAY Numerical Index Vishay Spectrol MODEL NUMBER. PAGE NO MODEL NUMBER. PAGE NO 3 H . 10 159. 62 |
OCR Scan |
||
S221Contextual Info: DATA SHEET VMF-300 A Bulk Metal Foil Established Reliability Resistors Military Specification MIL-R-122 C O M P A N Y O F VISHAY FOIL RESISTORS ▼ Vishay Model S22-1 U.S. Military Designation M122/1 VISHS006 The VISHAY S22-1 M122/1 is qualified to the reliability |
OCR Scan |
VMF-300 MIL-R-122 S22-1 M122/1 VISHS006 S22-1 M122/1) 50Ki2 X1000) S221 | |
SIR172DPContextual Info: SPICE Device Model SiR172DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the |
Original |
SiR172DP 18-Jul-08 | |
Contextual Info: Model 122 VISHAY Vishay Spectral 1/16” 26.9mm Single Turn Wirewound Precision Potentiometer FEATURES • 1 - 1/16” Round • Bushing Mount, Single Section • Servo Mount, Two Section • 5 to 20K ELECTRICAL SPECIFICATIONS PARAMETER STANDARD SPECIAL |
OCR Scan |
20-Nov-01 | |
Contextual Info: SPICE Device Model SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
SiS472DN 18-Jul-08 | |
Contextual Info: SPICE Device Model SiJ484DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
SiJ484DP 18-Jul-08 | |
Si7615DNContextual Info: SPICE Device Model Si7615DN Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
Si7615DN 18-Jul-08 | |
A3941
Abstract: 99A28
|
Original |
Si5414DC 18-Jul-08 A3941 99A28 | |
Si4564DY
Abstract: si4564
|
Original |
Si4564DY 18-Jul-08 si4564 | |
Contextual Info: SPICE Device Model Si4455DY www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
Si4455DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model Si7615DN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
Si7615DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model Si7114ADN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
Si7114ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SI7615A
Abstract: SI7615ADN
|
Original |
Si7615ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI7615A | |
|
|||
Contextual Info: SPICE Device Model Si8497DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
Si8497DB 11-Mar-11 | |
Contextual Info: SPICE Device Model Si4124DY www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
Si4124DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model Si8497DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
Si8497DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SQJ431EPContextual Info: SPICE Device Model SQJ431EP www.vishay.com Vishay Siliconix P-Channel 200 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
SQJ431EP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SQJ431EP | |
Contextual Info: SPICE Device Model SQM47N10-24L Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
SQM47N10-24L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SPICE Device Model SQM100N10-10 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
SQM100N10-10 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SI4340CDYContextual Info: SPICE Device Model Si4340CDY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
Si4340CDY 18-Jul-08 | |
Contextual Info: VISHAY _ Model 132,138,139 Vishay Spectral 1-5/16” 33.3mm Low Cost Industrial Single Turn Wirewound, Conductive Plastic, Cermet FEATURES • • • • Choice of Three Elements for Broad Resistance Range Center Tap Available |
OCR Scan |
MIL-PRF-12934/MIL-PRF-39023 MILR-12934: MIL-R-39023 19-Jun-01 | |
Contextual Info: 6 www.vishay.com Vishay Spectrol Snap-On Panel Mount Adapters Vishay Spectrol’s standard 3/4" and 1 - 1/4" rectangular trimming potentiometers, the Models 43 and 70, may be easily panel mounted through the use of Vishay Spectrol Model 6 panel mount adapters. The adapters are designed |
Original |
2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Model IMS-2_ Vishay Dale VISHAY Inductors Military, MIL-C-15305 Qualified, Type LT and Commercial, Molded, Shielded, Miniature FEATURES • • • • • Flame retardant coating. Electromagnetic shield. Small package for a shielded inductor. |
OCR Scan |
MIL-C-15305 MIL-STD-202, MIL-C-15305 MS21426 30-Apr-99 |