SI4455DY Search Results

SI4455DY-T1-GE3

Contextual Info: New Product Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6.0 V - 8.6c • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

si4455dy

Contextual Info: New Product Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6.0 V 8.6c - • TrenchFET Power MOSFET • 100% Rg Tested • 100% UIS Tested Qg (Typ.)

SI4455

Abstract: AN609
Contextual Info: Si4455DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

SI4455

Abstract: si4455dy
Contextual Info: New Product Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6.0 V - 8.6c • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

SI4455

Abstract: Si4455DY
Contextual Info: New Product Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6.0 V 8.6c - • TrenchFET Power MOSFET • 100% Rg Tested • 100% UIS Tested Qg (Typ.)

SI4455

Contextual Info: New Product Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6.0 V - 8.6c • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6 V 8.6c - Qg (Typ.) • 100% Rg and UIS Tested • Material categorization:

Si4455DY

Abstract: SI4455
Contextual Info: SPICE Device Model Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SPICE Device Model Si4455DY www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6.0 V - 8.6c • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs