VISHAY MARKING RG SMA Search Results
VISHAY MARKING RG SMA Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CO-174SMAX200-003 |
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Amphenol CO-174SMAX200-003 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 3ft | |||
CO-316SMAX200-001 |
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Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft | |||
CO-174SMAX200-002 |
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Amphenol CO-174SMAX200-002 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 2ft | |||
CO-058SMAX200-001 |
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Amphenol CO-058SMAX200-001 SMA Male to SMA Male (RG58) 50 Ohm Coaxial Cable Assembly 1ft | |||
CO-174SMAX200-005 |
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Amphenol CO-174SMAX200-005 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 5ft |
VISHAY MARKING RG SMA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IRFB17N60K, SiHFB17N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Smaller TO-220 Package 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 99 Qgs (nC) 32 Qgd (nC) • Low Gate Charge Qg Results in Simple Drive Requirement 0.35 • Improved Gate, Avalanche and Dynamic dV/dt |
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IRFB17N60K, SiHFB17N60K O-220 O-220 IRFB17N60KPbF SiHFB17N60K-E3 12-Mar-07 | |
IRFB17N60K
Abstract: SiHFB17N60K SiHFB17N60K-E3
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IRFB17N60K, SiHFB17N60K O-220 O-220 18-Jul-08 IRFB17N60K SiHFB17N60K-E3 | |
Contextual Info: New Product SiA408DJ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 4.5 0.039 at VGS = 4.5 V 4.5 VDS (V) 30 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC70 Package - Small Footprint Area |
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SiA408DJ SC-70-6L-Single SiA408DJ-T1-E3 08-Apr-05 | |
Si5483DU-T1-E3
Abstract: si5483
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Si5483DU 18-Jul-08 Si5483DU-T1-E3 si5483 | |
74592
Abstract: 74592 datasheet SC-70-6 SiA511DJ-T1-GE3 S-80436-Rev 74592 application notes
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SiA511DJ SC-70 SC-70-6 18-Jul-08 74592 74592 datasheet SiA511DJ-T1-GE3 S-80436-Rev 74592 application notes | |
BC846
Abstract: BC846A BC847 BC847A BC848 BC848A BC849 BC849B BC856 BC859
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BC846 BC849 O-236AB OT-23) OT-23 E8/10K 30K/box BC846A BC847A BC846A BC847 BC847A BC848 BC848A BC849 BC849B BC856 BC859 | |
Si2327DSContextual Info: Si2327DS New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 200 rDS(on) (W) ID (A) 2.35 @ VGS = −10 V −0.49 2.45 @ VGS = −6.0 V −0.48 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ) |
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Si2327DS O-236 OT-23) 08-Apr-05 | |
Si1411DH
Abstract: RthJA
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Si1411DH SC-70 OT-363 SC-70 Si1411DH-T1--E3 18-Jul-08 RthJA | |
Si2325DS
Abstract: MS1117
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Si2325DS O-236 OT-23) 18-Jul-08 MS1117 | |
SiA483DJ
Abstract: D 2394 SIA483DJ-T1-GE3
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SiA483DJ 021at SC-70 SC-70-6L-Single SiA483DJ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A D 2394 | |
Si1419DH
Abstract: 50368
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Si1419DH SC-70 OT-363 Si1419DH-T1--E3 18-Jul-08 50368 | |
Si2327DSContextual Info: Si2327DS New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 200 rDS(on) (W) ID (A) 2.35 @ VGS = −10 V −0.49 2.45 @ VGS = −6.0 V −0.48 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ) |
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Si2327DS O-236 OT-23) 70lectual 18-Jul-08 | |
Contextual Info: SiA400EDJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 12 0.025 at VGS = 2.5 V 12 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area |
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SiA400EDJ SC-70 SC-70-6L-Single SiA400EDJ-T1-GE3electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
bc857
Abstract: tsb200 BC558 Transistors
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BC856 BC859 BC857, BC558 BC859 BC849 BC846. OT-23 bc857 tsb200 BC558 Transistors | |
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Si1411DH
Abstract: marking code G SI1411DH-T1-E3
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Si1411DH SC-70 OT-363 SC-70 Si1411DH-T1--E3 08-Apr-05 marking code G SI1411DH-T1-E3 | |
Si2325DSContextual Info: Si2325DS New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 150 rDS(on) (W) ID (A) 1.2 @ VGS = −10 V −0.69 1.3 @ VGS = −6.0 V −0.66 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ) |
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Si2325DS O-236 OT-23) 08-Apr-05 | |
Si1419DHContextual Info: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance |
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Si1419DH SC-70 OT-363 Si1419DH-T1--E3 08-Apr-05 | |
Contextual Info: Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.375 at VGS = 10 V 1.5 0.400 at VGS = 6.0 V 1.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Fast Switching In Small |
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Si3440DV 2002/96/EC Si3440DV-T1-E3 Si3440DV-T1-GE3 18-Jul-08 | |
Si1411DHContextual Info: Si1411DH New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 rDS(on) (W) ID (A) 2.6 @ VGS = −10 V −0.52 2.7 @ VGS = −6 V −0.51 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance |
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Si1411DH SC-70 OT-363 SC-70 Si1411DH-T1--E3 S-50461--Rev. 14-Mar-05 | |
Si1419DHContextual Info: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance |
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Si1419DH SC-70 OT-363 Si1419DH-T1--E3 S-50368--Rev. 28-Feb-05 | |
73240
Abstract: Si2327DS
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Si2327DS O-236 OT-23) 70ycle S-42448--Rev. 10-Jan-05 73240 | |
Contextual Info: New Product Si7102DN Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 35 0.0047 at VGS = 2.5 V 35 VDS (V) 12 Qg (Typ) 41 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm |
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Si7102DN Si7102DN-T1-E3 18-Jul-08 | |
Si3440DV-T1-GE3
Abstract: Si3440DV Si3440DV-T1-E3
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Si3440DV 2002/95/EC Si3440DV-T1-E3 Si3440DV-T1-GE3 18-Jul-08 | |
SI7100DNContextual Info: Si7100DN New Product Vishay Siliconix N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)e 0.0035 at VGS = 4.5 V 35 0.0045 at VGS = 2.5 V 35 VDS (V) 8 Qg (Typ) 40 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm |
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Si7100DN Si7100DN-T1-E3 08-Apr-05 |