VISHAY MARKING RG SMA Search Results

Contextual Info: IRFB17N60K, SiHFB17N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Smaller TO-220 Package 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 99 Qgs (nC) 32 Qgd (nC) • Low Gate Charge Qg Results in Simple Drive Requirement 0.35 • Improved Gate, Avalanche and Dynamic dV/dt

IRFB17N60K

Abstract: SiHFB17N60K SiHFB17N60K-E3
Contextual Info: IRFB17N60K, SiHFB17N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Smaller TO-220 Package 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 99 Qgs (nC) 32 Qgd (nC) • Low Gate Charge Qg Results in Simple Drive Requirement 0.35 • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: New Product SiA408DJ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 4.5 0.039 at VGS = 4.5 V 4.5 VDS (V) 30 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC70 Package - Small Footprint Area

Si5483DU-T1-E3

Abstract: si5483
Contextual Info: Si5483DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.043 at VGS = - 2.5 V - 12a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area

Contextual Info: Si5483DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.043 at VGS = - 2.5 V - 12a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area

74592

Abstract: 74592 datasheet SC-70-6 SiA511DJ-T1-GE3 S-80436-Rev 74592 application notes
Contextual Info: New Product SiA511DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) • Halogen-free • TrenchFET Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area

BC846

Abstract: BC846A BC847 BC847A BC848 BC848A BC849 BC849B BC856 BC859
Contextual Info: BC846 thru BC849 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors NPN Mounting Pad Layout 0.031 (0.8) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) 0.035 (0.9) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 1 Pin Configuration 1 = Base

SiA511DJ-T1-GE3

Abstract: SC-70-6 sia511dj "MARKING CODE G2"
Contextual Info: New Product SiA511DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) • Halogen-free • TrenchFET Power MOSFETs • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area

Si2327DS

Contextual Info: Si2327DS New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 200 rDS(on) (W) ID (A) 2.35 @ VGS = −10 V −0.49 2.45 @ VGS = −6.0 V −0.48 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)

pin configuration NPN transistor BC558

Abstract: pin configuration pnp transistor BC558 BC558 SOT-23 transistor BC558 BC558 BC846 BC849 BC856 BC856A BC857
Contextual Info: BC856 thru BC859 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors PNP Mounting Pad Layout 0.031 (0.8) TO-236AB (SOT-23) 0.035 (0.9) .122 (3.1) .110 (2.8) .016 (0.4) .056 (1.43) .052 (1.33) 3 .016 (0.4) Dimensions in inches and (millimeters)

Si1411DH

Abstract: RthJA
Contextual Info: Si1411DH New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 rDS(on) (W) ID (A) 2.6 @ VGS = −10 V −0.52 2.7 @ VGS = −6 V −0.51 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance

Si2325DS

Abstract: MS1117
Contextual Info: Si2325DS New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 150 rDS(on) (W) ID (A) 1.2 @ VGS = −10 V −0.69 1.3 @ VGS = −6.0 V −0.66 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)

SiA483DJ

Abstract: D 2394 SIA483DJ-T1-GE3
Contextual Info: New Product SiA483DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () (Max.) ID (A) 0.021at VGS = - 10 V - 12a 0.030 at VGS = - 4.5 V - 12a Qg (Typ.) 21 nC PowerPAK SC-70-6L-Single 1 APPLICATIONS D • Smart Phones, Tablet PCs, Mobile Computing:

Si1419DH

Abstract: 50368
Contextual Info: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance

Contextual Info: SiA400EDJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 12 0.025 at VGS = 2.5 V 12 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area

bc857

Abstract: tsb200 BC558 Transistors
Contextual Info: BC856 to BC859 VISHAY Vishay Semiconductors Small Signal Transistors PNP Features • PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups

BC558

Abstract: BC846 BC849 BC856 BC856A BC856B BC857 BC858A BC858B BC859
Contextual Info: BC856 to BC859 VISHAY Vishay Semiconductors Small Signal Transistors PNP Features • PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups

Si1411DH

Abstract: marking code G SI1411DH-T1-E3
Contextual Info: Si1411DH New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 rDS(on) (W) ID (A) 2.6 @ VGS = −10 V −0.52 2.7 @ VGS = −6 V −0.51 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance

Si2325DS

Contextual Info: Si2325DS New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 150 rDS(on) (W) ID (A) 1.2 @ VGS = −10 V −0.69 1.3 @ VGS = −6.0 V −0.66 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)

Si1419DH

Contextual Info: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance

Contextual Info: Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.375 at VGS = 10 V 1.5 0.400 at VGS = 6.0 V 1.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Fast Switching In Small

Si1411DH

Contextual Info: Si1411DH New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 rDS(on) (W) ID (A) 2.6 @ VGS = −10 V −0.52 2.7 @ VGS = −6 V −0.51 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance

Si1419DH

Contextual Info: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance

73240

Abstract: Si2327DS
Contextual Info: Si2327DS New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 200 rDS(on) (W) ID (A) 2.35 @ VGS = −10 V −0.49 2.45 @ VGS = −6.0 V −0.48 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)