VHF 1W TRANSISTOR Search Results

rd01mus1 applications

Abstract: RD01MUS1-101 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

2779, transistor

Abstract: 1348 transistor RD01MUS1 RD01MSU1 fet 547
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD01MUS1-101

Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

2sc1970 transistor

Abstract: 2SC1970 "RF Power Amplifiers" 2 w RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN NPN power Transistor DSA0022949 2SC197
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1970 DESCRIPTION •High Power Gain: Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio

5139 mosfet

Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING 4.4+/-0.1 FEATURES APPLICATION

equivalent transistor c 243

Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION 4.6MAX RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD01MUS1-101

Abstract: RD01MSU1 RD01MUS1 transistor 636 mitsubishi epoxi resin fet 547 1351 transistor rd01mus1 applications DD 127 D TRANSISTOR 2779, transistor
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD01MUS1-101

Abstract: RD01MUS1 fet 547 2779, transistor RD01MSU1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING 4.4+/-0.1 FEATURES APPLICATION

RD01MUS2

Abstract: 627 DIODE
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from

RD01MUS2

Abstract: RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD01MUS2

Abstract: RD01MUS2-101 GP 841 Diode GP 809 DIODE GP 839 DIODE GP 839 c111m
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

3M Touch Systems

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

THN5702F

Abstract: Mhz 434
Contextual Info: THN5702F Semiconductor SiGe NPN Transistor Unit in mm SOT-89 □ Applications - VHF and UHF wide band amplifier 3 □ Features 4 - Medium power 800mW, 1W application - Power gain 2 1 GP = 14 dB at VCE = 3.6 V, f = 460 MHz, PIN = 0 dBm GP = 15 dB at VCE = 4.5 V, f = 460 MHz, PIN = 0 dBm

ECG299

Abstract: ecg316 ECG290A ECG291 ECG295 si 220 mh ECG297 ECG318 NPN rf transistor ECG289A
Contextual Info: PHILIPS E C G INC 17E D Transistors cont'd EGG Type ^53=120 0005Ö33 A • "f-2,^11 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts BV q b o Description and Application ■ PNP-Sî, AF Pwr Amp (Compl to ECG289A) ECG290AMCP Matched Compl Pair-Contains 100

MS1261

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1261 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS • • • • • • • Features 175 MHz 12.5 VOLTS POUT = 15 WATTS Gp = 12 dB MINIMUM INPUT IMPEDANCE MATCHING

MS1261

Abstract: vhf 1w transistor
Contextual Info: MS1261 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS • • • • • • • Features 175 MHz 12.5 VOLTS POUT = 15 WATTS Gp = 12 dB MINIMUM INPUT IMPEDANCE MATCHING COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1261 is a Class C 12.5V epitaxial silicon NPN planar

GP 839 DIODE

Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.

MS1261

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1261 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS • • • • • • • Features 175 MHz 12.5 VOLTS POUT = 15 WATTS Gp = 12 dB MINIMUM INPUT IMPEDANCE MATCHING

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1261 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS • • • • • • • Features 175 MHz 12.5 VOLTS POUT = 15 WATTS Gp = 12 dB MINIMUM INPUT IMPEDANCE MATCHING

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1261 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS • • • • • • • Features 175 MHz 12.5 VOLTS POUT = 15 WATTS Gp = 12 dB MINIMUM INPUT IMPEDANCE MATCHING

GP 809 DIODE

Abstract: GP 007 DIODE
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from

NTE488

Contextual Info: NTE488 Silicon NPN Transistor RF Power Output Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz

NTE311

Contextual Info: NTE311 Silicon NPN Transistor Frequency Multiplier, Driver, VHF/UHF Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collectore–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V