VGS20V Search Results

M4306N

Abstract: M4306 ZDM4306
Contextual Info: SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS D1 L J Di L _ L ZDM4306N - ISSUE 1 - NOVEMBER 1995 Gì = ° s , D2 I I I I g2 Dz I I I I s? PARTMARKING DETAIL - M4306N ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage

Contextual Info: INTERNATIONAL RECTIFIER bSE D • MflSSMSE 1^3 ■ INR Bulletin E27108 International S Rectifier IRFK4HC50,IRFK4JC50 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.

Contextual Info: HARRIS SEMICOND SECTOR 5ÖE D iU HARRIS W SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL430 D, R, H • 43D2271 004S 7GD ^23 « H A S 2N7281D, 2N7281R 2N7281H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 2A, 500V, RDS(on) - 2.500

U22 2.5A 250V

Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

A2103

Contextual Info: 2SK1017-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S •Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V CSS = ± 3 0 V Guarantee

Contextual Info: 2 N 3823 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR CASE T O-72 THE 2N3823 IS AN N-CHANNEL JFET DESIGNED FOR RF AMPLIFIER AND MIXER APPLICATIONS. IT FEATURES LOW CROSS-MODULATION, LOW NOISE FIGURE AND GOOD POWER GAIN AT F R E ­ QUENCY UP TO 450MHz. • THE DEVICE IS ALSO

2n2709

Abstract: C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

A2118

Abstract: 2sk mosfet k1081
Contextual Info: 2SK1081-01 FUJI POWER MOS-FET N - C H A N N E L S IL IC O N P O W E R M O S - F E T p j j g £ p | £ g • Outline Drawings ■ features • High speed switching • Law on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 3 0 V Guarantee

Contextual Info: HARRIS SEMICOND SECTOR SflE » H a r r is U U SEM ICO N D UCTOR REGISTRATION PENDING Currently Available as FRK150 D, R, H • 43D2271 0045725 2T3 « H A S 2N7291D, 2N7291R 2N7291H Radiation Hardened N-Channel Power MOSFETs December1992 Features Package

L44A

Abstract: L-44a
Contextual Info: SSF70N10A Advanced Power MOSFET FEATURES BV0SS = 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175t: Operating Temperature ■ Lower Leakage Current : 10 uA M ax @ VOS= 100V

Contextual Info: MITSUBISHI Neh POWER MOSFET FK20UM-5 HIGH-SPEED SWITCHING USE FK20UM-5 • VDSS . 250V • rDS ON (MAX) . 0 .2 4 Î2 • Id . 20A

C621

Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

18200T

Abstract: germanium low power 150mW 460MSA 2N2097A C621 LM 18200T P1004 RT1116 2SC814 transistor C633
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

GM300

Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

FRK250

Contextual Info: H A RR IS S E M I C O N D S E CT OR 5ÔE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK250 D, R, H • 4 3 G2 27 1 G D 4 5 7 3 3 37T H H A S 2N7293D, 2N7293R 2N7293H Radiation Hardened N-Channel Power MOSFETs December 1992

19500 TRANSISTOR 50A

Contextual Info: HARRIS SENICONÏ SECTOR 5ÖE D fX H A R R I S • M3DSE71 DD457S7 BG3 « H A S 2N7299D, 2N7299R 2N7299H SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRK160 D, R, H) December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 50A, 100V, RD6(on) - 0.040Q

2N3823 equivalent

Abstract: 2N3823
Contextual Info: 2 N 3823 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR , ï 1 e I nwfi t f CASE TO-72 THE 2N3823 IS AN N-CHANNEL JFET DESIGNED FOR RF AMPLIFIER AND MIXER APPLICATIONS. IT FEATURES LOW CROSS-MODULATION, LOW NOISE FIGURE AND GOOD POWER GAIN AT FRE­ QUENCY UP TO 450MHz. •THE DEVICE IS ALSO

Contextual Info: bSE , - J ^ R F M S "HAS 2N7322D, 2N7322R æ S E M I C O N D U C T O R O HARRIS SEMICOND SECTOR REGISTRATION PENDING Currently Available as FRK9150 D, R, H ju n « 1993 A lT O ¿TIV# O O L f iÎà d à itl Radiation Hardened P-Channel Power MOSFETs Package

Contextual Info: bSE f f CH} l S S i s SEMICONDUCTOR " " N 2 7 2 7 D , HARRIS SEMICOND SECTOR REGISTRATION PENDING Currently Available as FRS234 D, R, H 2 N 7 2 7 9 R 2 N 7 2 7 9 H Radiation Hardened N-Channel Power MOSFETs June1993 Package Features • 9 5A.250V, RDS(on)-0.715Q

sanyo oscon

Abstract: sanyo os-con 0805ZC105MAT1A CT1300 5aSOT23
Contextual Info: ZXRD1000 SERIES
PWM DC-DC CONTROLLERS HIGH EFFICIENCY SIMPLESYNC Low Cost DESCRIPTION ZXRD1000 series can be used with all N channel devices or a combination of N & P channel devices. Additional functionality includes shutdown control, a user adjustable low battery flag and simple

2SK19Y

Abstract: C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

FE252

Abstract: 2N2886 FZJ 131 fzj 165 TIX882 2N2180 2N5425 2SC111 2SC114 transistor BF140
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

ior e78996

Abstract: irfk4h450 E78996 ior E78996
Contextual Info: INTERNATIONAL RECTIFIER b5E J> WÊ 4 0 5 5 45 2 OOlt.207 «l^T • INR Bulletin E2710/ International Rectifier IRFK4H450,IRFK4J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • ■ • • High Current Capability. UL recognised E78996.

FIL-3C

Abstract: to-92 mosfet 13T13
Contextual Info: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low