VGS MOSFET Search Results
VGS MOSFET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet | ||
TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet |
VGS MOSFET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Si1551DL-T1
Abstract: Si1551DL
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Original |
Si1551DL OT-363 SC-70 Si1551DL-T1 Si1551DL-T1--E3 08-Apr-05 | |
Contextual Info: Si1551DL Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 1.9 @ VGS = 4.5 V 0.30 3.7 @ VGS = 2.7 V 0.22 4.2 @ VGS = 2.5 V 0.21 0.995 @ VGS = −4.5 V −0.44 1.600 @ VGS = −2.7 V −0.34 1.800 @ VGS = −2.5 V |
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Si1551DL OT-363 SC-70 Si1551DL-T1 S-42353â 20-Dec-04 | |
Si5517DUContextual Info: Si5517DU New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) 0.039 @ VGS = 4.5 V ID (A)a 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 0.072 @ VGS = –4.5 V –6 0.100 @ VGS = –2.5 V –6 0.131 @ VGS = –1.8 V |
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Si5517DU 08-Apr-05 | |
Contextual Info: Si5517DU New Product Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) 0.039 @ VGS = 4.5 V ID (A)a 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 0.072 @ VGS = –4.5 V –6 0.100 @ VGS = –2.5 V –6 0.131 @ VGS = –1.8 V |
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Si5517DU 51930--Rev. 12-Sep-05 | |
Si1551DLContextual Info: Si1551DL Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 1.9 @ VGS = 4.5 V 0.30 3.7 @ VGS = 2.7 V 0.22 4.2 @ VGS = 2.5 V 0.21 0.995 @ VGS = -4.5 V -0.44 1.600 @ VGS = -2.7 V -0.34 1.800 @ VGS = -2.5 V -0.32 |
Original |
Si1551DL OT-363 SC-70 S-21374--Rev. 12-Aug-02 | |
Si1551DL
Abstract: Si1551DL-T1
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Original |
Si1551DL OT-363 SC-70 Si1551DL-T1 Si1551DL-T1--E3 18-Jul-08 | |
Contextual Info: Si1551DL Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (W) ID (A) 1.9 @ VGS = 4.5 V 0.30 3.7 @ VGS = 2.7 V 0.22 4.2 @ VGS = 2.5 V 0.21 0.995 @ VGS = −4.5 V −0.44 1.600 @ VGS = −2.7 V −0.34 1.800 @ VGS = −2.5 V |
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Si1551DL OT-363 SC-70 Si1551DL-T1 Si1551DL-T1--E3 S-42353--Rev. 20-Dec-42 | |
Si4539DY
Abstract: Si6543DQ Si9939DY
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Original |
Si9939DY Si4539DY Si6543DQ S-51308--Rev. 13-Dec-96 | |
Si6552DQ
Abstract: Si9529DY Si9928DY
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Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96 | |
Si4539DY
Abstract: Si6543DQ Si9939DY 51308
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Si9939DY Si4539DY Si6543DQ S-51308--Rev. 13-Dec-96 51308 | |
Si9928DY
Abstract: 701.43
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Si9928DY S-00652--Rev. 27-Mar-00 701.43 | |
Si9939DYContextual Info: Si9939DY Siliconix Dual EnhancementĆMode MOSFETs NĆ and PĆChannel Product Summary VDS (V) NĆChannel Ch l rDS(on) (W) ID (A) 0.05 @ VGS = 10 V "3.5 0.07 @ VGS = 6 V "3 0.08 @ VGS = 4.5 V "2.5 0.10 @ VGS = -10 V "3.5 0.12 @ VGS = -6V "3 0.16 @ VGS = -4.5 V |
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Si9939DY S-42910--Rev. | |
Si4539DY
Abstract: Si6543DQ Si9939DY
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Original |
Si9939DY Si4539DY Si6543DQ S-47958--Rev. 15-Apr-96 | |
Si9928DY
Abstract: Si6552DQ Si9529DY
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Original |
Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96 | |
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Si4532DY
Abstract: Si4539DY Si6543DQ Si9958DY si9958
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Si9958DY Si4532DY Si4539DY Si6543DQ S-47958--Rev. 15-Apr-96 si9958 | |
Si4532DY
Abstract: Si4539DY Si6543DQ Si9958DY
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Original |
Si9958DY Si4532DY Si4539DY Si6543DQ S-47958--Rev. 15-Apr-96 | |
Si6552DQ
Abstract: Si9529DY Si9928DY
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Original |
Si9928DY Si9529DY Si6552DQ S-47958--Rev. 15-Apr-96 | |
Si9928DYContextual Info: Si9928DY Vishay Siliconix Complimentary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Ch N-Channel l rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V |
Original |
Si9928DY 18-Jul-08 | |
Contextual Info: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel |
Original |
Si5517DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel |
Original |
Si5517DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si5517DU
Abstract: Si5517DU-T1-GE3 si5517
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Original |
Si5517DU 18-Jul-08 Si5517DU-T1-GE3 si5517 | |
Contextual Info: Si5517DU Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS N-Channel RDS(on) (Ω) 0.039 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.055 at VGS = 1.8 V 0.072 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V 0.131 at VGS = - 18 V 20 P-Channel |
Original |
Si5517DU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SI5517DU
Abstract: SI5517
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Original |
Si5517DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI5517 | |
Si9928DYContextual Info: Si9928DY Siliconix Dual EnhancementĆMode MOSFETs NĆ and PĆChannel Product Summary VDS (V) NĆChannel Ch l rDS(on) (W) ID (A) 0.05 @ VGS = 4.5 V "5.0 0.06 @ VGS = 3.0 V "4.2 0.08 @ VGS = 2.7 V "3.6 0.11 @ VGS = -4.5 V "3.4 0.15 @ VGS = -3.0 V "2.9 0.19 @ VGS = -2.7 V |
Original |
Si9928DY S-42910--Rev. |