VERTICAL PNP BJT Search Results

rpp1k1

Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate

TRANSISTOR REPLACEMENT GUIDE

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE TI5001 ZTX869 replacement ztx500 equivalent ZTX1048A 2n3904 TRANSISTOR REPLACEMENT ztx107 ZTX790A LM3578
Contextual Info: Application Note 22 Issue 1 May 1996 High Frequency DC-DC Conversion using High Current Bipolar Transistors 400kHz Operation with Optimised Geometry Devices Neil Chadderton Dino Rosaldi Introduction DC-DC conversion is o n e o f t h e fundamental circuit functions within the

Contextual Info: 0.35 m Process Family: XA035 0.35 Micron High Temperature Modular CMOS Technology DESCRIPTION The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to

XH035

Contextual Info: 0.35 m Process Family: XH035 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions DESCRIPTION The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target applications are standard cell, semi-custom and

P-Channel IGBT

Abstract: PTIGBT 600V 10A RUF resistor calculation of IGBT snubber mosfet 8A 900V TO-220 thyristor 5a 600v cross reference Drive Base BJT N-Channel jfet 100V depletion vtom Trench MOSFET Termination Structure
Contextual Info: Application Note 9016 February, 2001 IGBT Basics 1 by K.S. Oh CONTENTS 1. Introduction. 2. Device structure and operation .

TOP246Y

Abstract: TOP246Y equivalent power supply DVD schematic diagram 12VSB pc40EE25 1N4007GP d1 IC TOP246 EEL25 IC TOP246Y P6KE200A vishay
Contextual Info: Design Example Report Title 21W 45W peak Multiple Output Power Supply using TOP246Y Input: 90 – 265 VAC Specification Output: 12V / 0.72A (2.75APK), 5V / 1.4A, 3.3V / 1.51A, 3V / 0.1A, -22V/4mA Application DVD Recorder with HDD Author Power Integrations Applications Department

ad654 spice

Abstract: DARLINGTON TRANSISTOR ARRAY AD75019
Contextual Info: ANALOG DEVICES INC 51E D • OfllbflQQ 0 0 3 7 3 T M b42 ■ ANA - H7.-e>\ i r ■ MIXED SIGNAL M U M ' >Jlil\Ul' J.;! r l □ Q ANALOG DEVICES * ANALOG DEVICES INC 51E D ■ OfllbBOD 0 0 3 7 3 ^ 5 Table of Contents 1 Summary 2 ASIC Processes 5 LC2MOS Cell Library

IGBT SCHEMATIC

Abstract: motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541
Contextual Info: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1541/D AN1541 Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc. INTRODUCTION As power conversion relies more on switched applications,

XH018

Contextual Info: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron

reverse-conducting thyristor

Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate

lm9130

Contextual Info: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMP91300 SNOSCS3B – SEPTEMBER 2013 – REVISED MARCH 2014 LMP91300 Industrial Inductive Proximity Sensor AFE 1 Features 3 Description • • • • • • • The LMP91300 is a complete analog front end AFE

TAG 8510

Abstract: 5.1 audio amplifier STV-5700 STV0684 IS1612 VC5700 134E6 48LCC VC5700V048 VC6700V048
Contextual Info: VC700 2.0 MegaPixel Digital Video CMOS Image Sensor PRODUCT PREVIEW Features Applications • 1600 x 1200 resolution 2 megapixel ● Digital Still Cameras ■ 1/2 inch format lens compatible ● Barcode Reading ■ 3v3 supply Technical specifications ■ i2c control

Contextual Info: LMP91300 www.ti.com SNOSCS3A – SEPTEMBER 2013 – REVISED OCTOBER 2013 LMP91300 Industrial Inductive Proximity Sensor AFE Check for Samples: LMP91300 FEATURES DESCRIPTION • • • • • • • The LMP91300 is a complete analog front end AFE optimized for use in industrial inductive proximity

POWER BJTs

Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time
Contextual Info: MOTOROLA Order this document by AN1540/D SEMICONDUCTOR APPLICATION NOTE AN1540 Application Considerations Using Insulated Gate Bipolar Transistors IGBTs Prepared by: C.S. Mitter Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor

LA5664

Abstract: LV5768 LV51111 LV5604 tn8d51a lv5710 step down Voltage Regulator sop8 2a TN8D01A LV5851M LV51144T
Contextual Info: Power Supply ICs, LED Driver ICs 2009-12 High efficiency, High Performance and Further Miniaturization SANYO Semiconductor presents its lineup of power supply ICs regulator ICs designed to be used for a full range of products such as ones that feature low,

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

SCR TRIGGER PULSE TRANSFORMER

Abstract: HV400IP 1W carbon resistor SCR 30v triggering circuit 4 pin SCR gate drive circuit SCR DRIVING SCR TRIGGER PULSE circuit 1N914 HV400 HV400IB
Contextual Info: HV400 Semiconductor July 1998 WN ITHDRA PART W OBSOLETE SS S PROCE DESIGN N NO EW Features High Current MOSFET Driver • Fast Fall Times . . . . . . . . . . . . . . . . . . 16ns at 10,000pF The HV400 is a single monolithic, non-inverting high current driver designed to drive large capacitive loads at high slew

HV400

Abstract: SCR Gate Drive hv400m
Contextual Info: HV400 Semiconductor July 1998 t ie Features • Fast Fall Times « D E S IG N 16ns at 10,000pF • No Supply Current in Quiescent State • Peak Source C u rre n • Peak Sink Current. 30A

hv4001

Abstract: EFJ142 gg42 1571C HV400CB HV400IP 12v DC johnson motor HV400CP
Contextual Info: HA R R I S f5 î SEIHCOND M A R SECTOR R SbE D • H3GEE71 IS SEMICONDUCTOR 004833^ M«i 2 MHAS HV4UU F ' 5 P .-/7 High Current MOSFET Driver May 1992 Features Description • Fast Fall Tim as.16ns at 10,000pF _ « . . No Supply Current In Quiescent State

PR14X8

Abstract: transistor smd ALG DPA424 DPA424G lm431 smd UV 471 DER-43 EN55022B LM431 transistor tip 3005
Contextual Info: Design Example Report Title 24.5W Power Supply using DPA424G Specification Input: -40 VDC Output: -28V / 480mA, -65 V / 170mA Application Telecom Line Card Author Power Integrations Applications Department Document Number DER-43 Date November 18, 2004 Revision

TL494

Abstract: SLVS074G tl494 applications 5v 10A tl494 5v dc power supply with TL494 tl494 application note Application Notes tl494 tl494 dc to ac inverters nte331
Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TL494 SLVS074G – JANUARY 1983 – REVISED JANUARY 2015 TL494 Pulse-Width-Modulation Control Circuits 1 Features 3 Description • • The TL494 device incorporates all the functions

mcz 300 1bd

Abstract: SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode
Contextual Info: 개정 신판 도해 반도체 가이드 개정신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 발간에 즈음하여 Color and Visual Guide: Semiconductors Published by TOSHIBA CORPORATION

siliconix vmp4

Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
Contextual Info: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc

transistor RCA 467

Abstract: ota ca 3080 RCA 3080 rca CA3080 RCA 467 rca cmos book rca cmos handbook IEEE J. Solid State Circuits, SC "rca application note" rca 1967
Contextual Info: R. L. Geiger and E. Sánchez-Sinencio, "Active Filter Design Using Operational Transconductance Amplifiers: A Tutorial," IEEE Circuits and Devices Magazine, Vol. 1, pp.20-32, March 1985. Active Filter Design Using Operational Transconductance Amplifiers: A Tutorial