AN4503 Search Results

cortex M4

Abstract: ARM Cortex M4 ARM CORTEX-M4 OSC32KCLK RCMS
Contextual Info: Freescale Semiconductor Application Note Document Number: AN4503 Rev. 0, 5/2012 Power Management for Kinetis and ColdFire+ MCUs When and how to use low-power modes by: Philip Drake System Applications Engineering Austin, Texas Contents 1 Introduction 1

An Introduction to IGBT Operation

Abstract: AN4503 IGBT EQUIVALENT AN4503-4 static characteristics of mosfet and igbt n mosfet depletion mosfet 1500v MOS Controlled Thyristor
Contextual Info: AN4503 Application Note AN4503 An Introduction To IGBT Operation Application Note Replaces September 2000 version, AN4503-4.0 AN4503-4.1 July 2002 The power semiconductor devices available on the market can be categorised into three groups viz., can be grown and so this type of structure is limited to voltages

Contextual Info: Freescale Semiconductor Application Note Document Number:AN4503 Rev. 1, 11/2012 Power Management for Kinetis and ColdFire+ MCUs When and how to use low-power modes by: Philip Drake Contents 1 Introduction 1

Contextual Info: Freescale Semiconductor, Inc. Reference Manual Document Number: KL26P121M48SF4RM Rev. 3.3, 4/2015 KL26 Sub-Family Reference Manual with Addendum Rev. 3.3 of the KL26 Sub-Family Reference Manual has two parts: • The addendum to revision 3.2 of the reference manual, immediately following this cover page.

GP800

Abstract: AN4508 AN4502 AN4503 AN4505 GP800DCS18 DS5221-4 dc chopper circuit application
Contextual Info: GP800DCS18 GP800DCS18 Chopper Switch IGBT Module Replaces November 2000 version, DS5221-4.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module

GP801DCM18

Abstract: AN4502 AN4503 AN4505 AN4506
Contextual Info: GP801DCM18 GP801DCM18 Hi-Reliability Chopper Switch Low VCE SAT IGBT Module DS5365-3.0 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Module ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

AN4502

Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
Contextual Info: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the

AN4502

Abstract: AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module
Contextual Info: GP2401ESM18 GP2401ESM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module Replaces February 2000 version, DS5345-1.0 FEATURES • Low VCE(SAT) ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5345-2.4 January 2001

AN4502

Abstract: AN4503 AN4505 AN4506 GP800DCM18
Contextual Info: GP800DCM18 GP800DCM18 Hi-Reliability Chopper Switch IGBT Module DS5363-3.0 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)

AN4502

Abstract: AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190
Contextual Info: GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES • Internally Configured With Upper Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS

AN4502

Abstract: AN4503 AN4505 AN4506 GP2400ESM18
Contextual Info: GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 2400A Per Module KEY PARAMETERS VCES typ VCE(sat)

AN4502

Abstract: DS5358-2 AN4503 AN4505 AN4506 GP800NSS33 an5167 440nF DS-5358
Contextual Info: GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate with AL2O3 Substrate ■ Low Inductance Internal Construction DS5358-2.1 March 2001

723 ic internal diagram

Abstract: GP1201FSS18 AN4502 AN4503 AN4505 AN4506
Contextual Info: GP1201FSS18 GP1201FSS18 Single Switch Low VCE SAT IGBT Module DS5411-1.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module KEY PARAMETERS VCES (typ)

K1p TRANSISTOR

Abstract: AN4502 AN4503 AN4505 GP1600FSM18
Contextual Info: GP1600FSM18 GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 FEATURES • High Thermal Cycling Capability ■ 1600A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5361-2.3 January 2001

AN4505

Abstract: GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram
Contextual Info: GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

AN4502

Abstract: AN4503 AN4505 GP800FSS18
Contextual Info: GP800FSS18 GP800FSS18 Singles Switch IGBT Module Replaces January 2000 version, DS5261-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module

Contextual Info: Freescale Semiconductor Users Guide KLQRUG Rev. 0, 09/2012 Kinetis L Peripheral Module Quick Reference A Compilation of Demonstration Software for Kinetis L Series Modules This collection of code examples, useful tips, and quick reference material has been created to help you speed the

DS5402-1

Abstract: AN4502 AN4503 AN4505 AN4506 GP800FSM18
Contextual Info: GP800FSM18 GP800FSM18 Hi-Reliability Single Switch IGBT Module DS5402-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)

AN4502

Abstract: AN4503 AN4505 GP1601FSS18 DS5248-4
Contextual Info: GP1601FSS18 GP1601FSS18 Single Switch Low VCE SAT IGBT Module Replaces January 2000 version, DS5248-3.0 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1600A Per module DS5248-4.2 January 2001

AN5190

Abstract: AN4502 GP200MHB12S GP200MHS12 AN4503 AN4508
Contextual Info: GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction DS5296-1.5 November 2000 KEY PARAMETERS VCES typ

DS5401-1

Abstract: basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 GP801FSM18 DS5401
Contextual Info: GP801FSM18 GP801FSM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module DS5401-1.1 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

AN4502

Abstract: AN4503 GP1200ESM33 DS5308-1
Contextual Info: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001

AN4502

Abstract: AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v
Contextual Info: GP800DDM12 GP800DDM12 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces May 2000 version, DS5291-1.3 FEATURES • High Thermal Cycling Capability ■ 800A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

AN4502

Abstract: AN4503 AN4505 AN4506 GP201MHS18
Contextual Info: GP201MHS18 GP201MHS18 Low VCE SAT Half Bridge IGBT Module DS5290-2.1 January 2001 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 200A Per Arm APPLICATIONS ■ High Reliability Inverters