VDS100 Search Results

Contextual Info: 100V,20A Low RDS ON Nch Trench Power MOS FET FKG1020 Dec. 2012 Features Package  VDS-100V  ID-20A  RDS(ON) -33m typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220F

100V 100A mos fet

Contextual Info: 100V,20A Low RDS ON Nch Trench Power MOS FET FKG1020 Dec. 2012 Features Package  VDS-100V  ID-20A  RDS(ON) -33mΩ typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220F

Contextual Info: 2SK1434 2056 AP A d va n ce d P e rfo rm a n c e Series V DSS= 1 0 0 V N Channel Power M O SFET F eatures • Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute M axim um R atings atTa=25°C Drain to Source Voltage Vdss Gate to Source Voltage

Contextual Info: 100V,20A Low RDS ON Nch Trench Power MOS FET EKG1020 Dec. 2012 Features Package  VDS-100V  ID-20A  RDS(ON) -33mΩ typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220

2SK2000-R

Contextual Info: I SPECIFICATION DEVICE NAME : P o w e r M O S F E T TYPE NAME : 2 S K 2 0 0 Q - R SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED F u ji E le c tr ic C o J jtd DRAWN CHECKED o z 5: 1 / Ao 1

AO3400AL

Abstract: AO3400A
Contextual Info: AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AO3400A/L uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. AO3400A and AO3400AL are electrically

Contextual Info: 100V,20A Low RDS ON Nch Trench Power MOS FET EKG1020 Dec. 2012 Features Package  VDS-100V  ID-20A  RDS(ON) -33m typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220

v 132

Abstract: laplink 9 - 25 pin
Contextual Info: ß DSV14196 +3.3V Supply EIA/TIA-232 5 Driver x 3 Receiver F e a tu re s • C onform s to EIA/TIA-232-E and ITU-T V.28 ■ 5 drivers and 3 receivers The flow-through pinout facilitates sim ple non-crossover board layout. T he D S V 14196/D SV 14196T provides a pe­

Contextual Info: AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AO3400A uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is

AO3400A

Abstract: ID10
Contextual Info: AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AO3400A uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is

1RFR210

Contextual Info: International [»3 Rectifier GST • IN R MÖSSHS2 D ü lS b b 4 PD-9.526C IRFR210 IRFU210 HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR210 Straight Lead (IRFU210) Available in Tape & Reel Fast Switching Ease of Paralleling

AO3426

Abstract: ao34
Contextual Info: AO3426 N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AO3426 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3426 is