VBE 8 V Search Results

CSA 70

Contextual Info: VBE 20 / VUE 30 Advanced Technical Information Single / Three Phase Rectifier Bridge VRRM IdAV 1~ IdAV (3~) trr with Fast Recovery Epitaxial Diodes (FRED) VRSM V VRRM V Type Single Phase Type Three Phase 2000 2000 VBE 20-20NO1 VUE30-20NO1 5 6 10 1 5 6 8 10 1

FMMT2907

Abstract: FMMT2907A FZT2907 FZT2907A DSA003709
Contextual Info: FZT2907 FZT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL FMMT2907 FMMT2907A MIN. MIN. MAX. UNIT CONDITIONS. MAX. Output Capacitance Cobo 8 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 30 pF VBE=-2V, IC=0

MPS2907A

Contextual Info: MPS2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=-2V, IC=0 f=100KHz Turn On Time ton 50 ns

2n6259

Abstract: 2n4348
Contextual Info: POWER TRANSISTORS PT TYPE NO. TO-3 MAXIMUM RATINGS Ic 25*C BVcbo BVceo BVebo A V V V Watts hrE @ <5 MIN MAX Ic A VCE V Sat Test Voltages Conditions Ib VcE Vbe Ic I ebo V A V A ma 2N3773 150 160 140 7 16 15 60 8 4 1.4 2.2 8 .8 5 2N4348 120 140 120 7 10 15 60

2SC3835

Abstract: DSA0016507
Contextual Info: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max

PN4250

Abstract: 2N4248 2N4288 2N4249 2N4250A 2N4250
Contextual Info: This Material PNP Transistors Copyrighted 3> —3 LOW LEVEL AMPS C«a Style Vc b o V Min v CEO (V) Min vebo 2N2604 TO-46 60 45 6 By Type No. (V) Min •CBO VCB (nA) (V) Max 10 *>FE 'C » VCE Min Max (mA| (V) 350 45 10 VCE(SAT) VBE(SAT) (V) 8. (V) »

AX2200

Abstract: Semikron sk 100 dal
Contextual Info: se MIKRQN Maximum Ratings Symbol Values Units lc = 1 A, V b e = - 2 V 1200 V Vbe = - 2 V 1200 V 1200 V Conditions VcEVsus lc = 0 7 V lc D. C. 150 A tp = 1 m s 300 A If = - l c 150 A Ib 8 A 1000 W Tv] - 4 0 , . . + 150 °C Tstg - 4 0 . . . + 125 °c 2500- V

2N2067

Abstract: 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1183 2N1184A
Contextual Info: germanium power transistors PNP TO-8 lc M A X — hFE @ Ic / V c E Type# 2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B V c e o is u s ) (Volts) 20 30 40 20 30 40 V ebo (Volts) (Min-Max @ A/V) Vbe V c E lS A T J @ Ic / Ib (V (S> A/A) 20 20 20 20 20 20 @ Ic/VcE

2-21F1A

Contextual Info: Rziz Ta=25"C EIAJ 37 i% : hFE(lja%i R : 55-110, 0 : 80-160 25 2-21F1A -16 "0 -4 -8 3lJ5J$J.X$ -12 hm - Ic -I 6 -20 IC - VBE -0.4 - 0.8 -i - ;( . I. $ 9 VCE(sat) -1.2 - 1.6 - IC 500 300 -1 !z Jz 100 # @ ?s #nJ -0.5 / 50 30 p, t( 10 5 P, Jb 1 3 -,0.05 - 0.03

FZT951

Abstract: FZT953 fzt853 FZT851 DSA003718
Contextual Info: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps

motor reversible schematic diagram

Abstract: schematic diagram reverse forward motor BA6219 BA6219B ba621 Motor Driver Circuit schematic 12V BA6219BFP-Y reversible motor driver 12v motor cassette
Contextual Info: Motor driver ICs Reversible motor driver BA6219B / BA6219BFP-Y The BA6219B and BA6219BFP-Y are reversible-motor drivers suitable for brush motors. Two logic inputs allow four output modes: forward, reverse, idling, and braking. The motor revolving speed can be set arbitrarily by controlling the voltage applied to the motor.

2N5154

Contextual Info: 2N5152 2N5154 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . DESCRIPTION 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 3 2 .5 4 (0 .1 0 0 )

Contextual Info: BUX33A BUX33A BUX33B MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . DESCRIPTION 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )

2N5153

Abstract: 2N5151 2N5152 2N5154
Contextual Info: 2N5152 2N5154 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . DESCRIPTION 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 3 2 .5 4 (0 .1 0 0 )

Contextual Info: BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS POWER 30/45/65 Volts VOLTAGE 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Lead free in comply with EU RoHS 2002/95/EC directives.

A114F

Contextual Info: 97.07,/ <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGTURJS U gdq FJ<G6;<A: 64C45<?<GL v<?8 }Bbnueghiek U h>0 7<8?86GE<6 FGE8A:G; ]58GJ88A 6B<? 4A7 6BAG46GF^ U s?4FF v <AFH?4G<BA 4I4<?45?8 v<?8 }Bbn,ideihkff U g@@ 6BAG46G :4C 4I4<?45?8 U uAI<EBA@8AG4? 9E<8A7?L CEB7H6G ],Bx- 6B@C?<4AG^

FZT855

Abstract: FZT955 FZT956 DSA003675
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT955 FZT956 ISSUE 2 – OCTOBER 1995 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps C

Contextual Info: BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volts VOLTAGE 330 mWatts CURRENT FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives

Contextual Info: BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS CURRENT 30/45/65 Volts VOLTAGE 150 mWatts • General purpose amplifier applications • NPN epitaxial silicon, planar design 0.087 2.20 0.070(1.80) • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives

ZTX556

Abstract: ZTX557 DSA003769
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX556 ZTX557 ISSUE 1 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS tf ts µs µs IC/IB=10 IB1=IB2=IC/10 16 4 3 -0.4 -0.2 tf 12 tr 2 -0.0001

BUX16

Abstract: voltage regulators 300v dc BUX16/A BUX16A BUX16B BUX16C
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX16/A/B/C DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 200V(Min)- BUX16 = 250V(Min)- BUX16A = 300V(Min)- BUX16B = 350V(Min)- BUX16C ·High Power Dissipation

Contextual Info: Ordering number : EN8211A MCH3145/MCH3245 Bipolar Transistor http://onsemi.com – 50V, (–)2A, Low VCE(sat), (PNP)NPN Single MCPH3 Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • • • • • Large current capacity Adoption of MBIT processes

BC850CW

Contextual Info: BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS POWER 30/45/65 Volts VOLTAGE 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Lead free in comply with EU RoHS 2002/95/EC directives.

ZTX556

Contextual Info: ZTX556 Not Recommended for New Design Please Use ZTX557 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX556 ZTX557 ISSUE 1 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS tf ts µs µs IC/IB=10