VBE 8 V Search Results

CSA 70

Contextual Info: VBE 20 / VUE 30 Advanced Technical Information Single / Three Phase Rectifier Bridge VRRM IdAV 1~ IdAV (3~) trr with Fast Recovery Epitaxial Diodes (FRED) VRSM V VRRM V Type Single Phase Type Three Phase 2000 2000 VBE 20-20NO1 VUE30-20NO1 5 6 10 1 5 6 8 10 1

FMMT2907

Abstract: FMMT2907A FZT2907 FZT2907A DSA003709
Contextual Info: FZT2907 FZT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL FMMT2907 FMMT2907A MIN. MIN. MAX. UNIT CONDITIONS. MAX. Output Capacitance Cobo 8 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 30 pF VBE=-2V, IC=0

Contextual Info: DISCONTINUED FXT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=2V, IC=0, f=100KHz Turn On Time

MPS2907A

Contextual Info: MPS2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=-2V, IC=0 f=100KHz Turn On Time ton 50 ns

FXT2907A

Contextual Info: FXT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=2V, IC=0, f=100KHz Turn On Time ton 50 ns

2n6259

Abstract: 2n4348
Contextual Info: POWER TRANSISTORS PT TYPE NO. TO-3 MAXIMUM RATINGS Ic 25*C BVcbo BVceo BVebo A V V V Watts hrE @ <5 MIN MAX Ic A VCE V Sat Test Voltages Conditions Ib VcE Vbe Ic I ebo V A V A ma 2N3773 150 160 140 7 16 15 60 8 4 1.4 2.2 8 .8 5 2N4348 120 140 120 7 10 15 60

VQE 23 E

Abstract: VQE 23 F
Contextual Info: euoec BSM 200 GA 170 DN2 F IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate • on,min = 6-8 Ohm Type VbE Package Ordering Code BSM 200 GA 170 DN2 1700V 290A SINGLE SWITCH 1 C67070-A2705-A67

2SC3835

Abstract: DSA0016507
Contextual Info: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max

2SC3834

Abstract: transistor 1022
Contextual Info: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A

PN4250

Abstract: 2N4248 2N4288 2N4249 2N4250A 2N4250
Contextual Info: This Material PNP Transistors Copyrighted 3> —3 LOW LEVEL AMPS C«a Style Vc b o V Min v CEO (V) Min vebo 2N2604 TO-46 60 45 6 By Type No. (V) Min •CBO VCB (nA) (V) Max 10 *>FE 'C » VCE Min Max (mA| (V) 350 45 10 VCE(SAT) VBE(SAT) (V) 8. (V) »

Contextual Info: -10 -50 VCE=-6V Ta=100˚C 25˚C -40˚C -20 -35.0 Ta=25˚C -31.5 -28.0 -8 -10 -24.5 IC mA IC (mA) -5 -2 -1 -21.0 -6 -17.5 -14.0 -4 -10.5 -0.5 -7.0 -2 -3.5mA -0.2 -0.1 IB=0 -0.4 -0.2 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -0.8 -0.4 -1.2 -1.6 -2.0 VCE (V) VBE (V) 500

AX2200

Abstract: Semikron sk 100 dal
Contextual Info: se MIKRQN Maximum Ratings Symbol Values Units lc = 1 A, V b e = - 2 V 1200 V Vbe = - 2 V 1200 V 1200 V Conditions VcEVsus lc = 0 7 V lc D. C. 150 A tp = 1 m s 300 A If = - l c 150 A Ib 8 A 1000 W Tv] - 4 0 , . . + 150 °C Tstg - 4 0 . . . + 125 °c 2500- V

Contextual Info: 50 10 VCE=6V 20 8 5 IC mA IC (mA) 10 2 6 4 1 0.5 2 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 4 8 VBE (V) 12 16 20 VCE (V) 500 500 VCE = 5V 3V 1V 200 200 100 hFE hFE 100 50 50 20 20 10 0.2 0.5 1 2 5 10 20 50 100 10 0.2 200 0.5 1 2 IC (mA) 5 10 20 50 100 200

2N2067

Abstract: 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1183 2N1184A
Contextual Info: germanium power transistors PNP TO-8 lc M A X — hFE @ Ic / V c E Type# 2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B V c e o is u s ) (Volts) 20 30 40 20 30 40 V ebo (Volts) (Min-Max @ A/V) Vbe V c E lS A T J @ Ic / Ib (V (S> A/A) 20 20 20 20 20 20 @ Ic/VcE

NPN Power Darlington Modules

Contextual Info: s e MIKRDn Maxim um Ratings Sym bol C onditions Values Units lc = 1 A, Vbe = - 2 V 1000 V VCEV V be = - 2 V 1000 \n VcBO Ie = 0 1000 V V ebo lc = 0 7 V lc D. C. 150 A tp = 1 ms 300 VcEVsus ICM Ib Tease = 2 5 °C Ptot I- A 8 A 1000 W Tvj - 4 0 . . . + 150 °C

Contextual Info: NEW E N G L A N D S E M I C O N D U C T O R STE D • b S b l4tìlì3 G O D D O S l 725 M N E S I max = 0 .0 5 to lO A V ceo(sus) = 4 0 -8 0 0 V fi = 1 to 5 0 MHz NPN TO-39/TO-5 Case 801 T -3 3 ~ o ( VCE (SAT) @ IC/ lB ( V A/A) VBE (SAT) @ |C/lB (V ® A/A)

2SK1045

Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
Contextual Info: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100

2N7058

Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20

FZT951

Abstract: FZT953 fzt853 FZT851 DSA003718
Contextual Info: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps

TIS84

Abstract: TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763
Contextual Info: STI Type: TIP539 Notes: Polarity: NPN Power Dissipation: 125 VCEV: 400 VCEO: 300 ICEV: 400 ICEV A: 1.0 hFE: 20 hFE A: 7.5 VCE: 2.5 VBE: 2.0 IC: 15 COB: fT: 10 Case Style: TO-204AA/TO-3: Industry Type: TIP539 STI Type: TIP540 Notes: Polarity: NPN Power Dissipation: 125

motor reversible schematic diagram

Abstract: schematic diagram reverse forward motor BA6219 BA6219B ba621 Motor Driver Circuit schematic 12V BA6219BFP-Y reversible motor driver 12v motor cassette
Contextual Info: Motor driver ICs Reversible motor driver BA6219B / BA6219BFP-Y The BA6219B and BA6219BFP-Y are reversible-motor drivers suitable for brush motors. Two logic inputs allow four output modes: forward, reverse, idling, and braking. The motor revolving speed can be set arbitrarily by controlling the voltage applied to the motor.

2N5154

Contextual Info: 2N5152 2N5154 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . DESCRIPTION 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 3 2 .5 4 (0 .1 0 0 )

Contextual Info: BUX33A BUX33A BUX33B MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . DESCRIPTION 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )

npn 1000V 15A

Abstract: BUX33 transistor VCE 1000V vbe 10v, vce 500v NPN Transistor npn high voltage transistor 500v 8a NPN Transistor VCEO 1000V BUX33A BUX33B
Contextual Info: BUX33A BUX33A BUX33B MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . DESCRIPTION 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )