VBE 8 V Search Results

CSA 70

Contextual Info: VBE 20 / VUE 30 Advanced Technical Information Single / Three Phase Rectifier Bridge VRRM IdAV 1~ IdAV (3~) trr with Fast Recovery Epitaxial Diodes (FRED) VRSM V VRRM V Type Single Phase Type Three Phase 2000 2000 VBE 20-20NO1 VUE30-20NO1 5 6 10 1 5 6 8 10 1

FMMT2907

Abstract: FMMT2907A FZT2907 FZT2907A DSA003709
Contextual Info: FZT2907 FZT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL FMMT2907 FMMT2907A MIN. MIN. MAX. UNIT CONDITIONS. MAX. Output Capacitance Cobo 8 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 30 pF VBE=-2V, IC=0

MPS2907A

Contextual Info: MPS2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Output Capacitance Cobo 8 pF VCB=-10V, IE=0, f=100KHz Input Capacitance Cibo 30 pF VBE=-2V, IC=0 f=100KHz Turn On Time ton 50 ns

2n6259

Abstract: 2n4348
Contextual Info: POWER TRANSISTORS PT TYPE NO. TO-3 MAXIMUM RATINGS Ic 25*C BVcbo BVceo BVebo A V V V Watts hrE @ <5 MIN MAX Ic A VCE V Sat Test Voltages Conditions Ib VcE Vbe Ic I ebo V A V A ma 2N3773 150 160 140 7 16 15 60 8 4 1.4 2.2 8 .8 5 2N4348 120 140 120 7 10 15 60

PN4250

Abstract: 2N4248 2N4288 2N4249 2N4250A 2N4250
Contextual Info: This Material PNP Transistors Copyrighted 3> —3 LOW LEVEL AMPS C«a Style Vc b o V Min v CEO (V) Min vebo 2N2604 TO-46 60 45 6 By Type No. (V) Min •CBO VCB (nA) (V) Max 10 *>FE 'C » VCE Min Max (mA| (V) 350 45 10 VCE(SAT) VBE(SAT) (V) 8. (V) »

2N2067

Abstract: 2N1184B 2n1755 2N301 2N1533 2N176 2N2068 germanium transistors NPN 2N1183 2N1184A
Contextual Info: germanium power transistors PNP TO-8 lc M A X — hFE @ Ic / V c E Type# 2N1183 2N1183A 2N1183B 2N1184 2N1184A 2N1184B V c e o is u s ) (Volts) 20 30 40 20 30 40 V ebo (Volts) (Min-Max @ A/V) Vbe V c E lS A T J @ Ic / Ib (V (S> A/A) 20 20 20 20 20 20 @ Ic/VcE

2-21F1A

Contextual Info: Rziz Ta=25"C EIAJ 37 i% : hFE(lja%i R : 55-110, 0 : 80-160 25 2-21F1A -16 "0 -4 -8 3lJ5J$J.X$ -12 hm - Ic -I 6 -20 IC - VBE -0.4 - 0.8 -i - ;( . I. $ 9 VCE(sat) -1.2 - 1.6 - IC 500 300 -1 !z Jz 100 # @ ?s #nJ -0.5 / 50 30 p, t( 10 5 P, Jb 1 3 -,0.05 - 0.03

FZT951

Abstract: FZT953 fzt853 FZT851 DSA003718
Contextual Info: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps

Contextual Info: BUX33A BUX33A BUX33B MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . DESCRIPTION 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )

2N5153

Abstract: 2N5151 2N5152 2N5154
Contextual Info: 2N5152 2N5154 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . DESCRIPTION 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 3 2 .5 4 (0 .1 0 0 )

pnp 10A

Abstract: 5A25T SLA4313
Contextual Info: SLA4313 NPN Silicon Epitaxial Planar PNP □Absolute maximum ratings Parameter （Ta＝25℃） Symbol NPN PNP Unit Collector-Base Voltage VCBO 35 −35 V Collector-Emitter Voltage VCEO 35 −35 V Emitter-Base Voltage VEBO 6 −6 V Collector Current IC 5 −5

Contextual Info: BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS POWER 30/45/65 Volts VOLTAGE 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Lead free in comply with EU RoHS 2002/95/EC directives.

A114F

Contextual Info: 97.07,/ <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGTURJS U gdq FJ<G6;<A: 64C45<?<GL v<?8 }Bbnueghiek U h>0 7<8?86GE<6 FGE8A:G; ]58GJ88A 6B<? 4A7 6BAG46GF^ U s?4FF v <AFH?4G<BA 4I4<?45?8 v<?8 }Bbn,ideihkff U g@@ 6BAG46G :4C 4I4<?45?8 U uAI<EBA@8AG4? 9E<8A7?L CEB7H6G ],Bx- 6B@C?<4AG^

ZTX556

Abstract: ZTX557 DSA003769
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX556 ZTX557 ISSUE 1 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS tf ts µs µs IC/IB=10 IB1=IB2=IC/10 16 4 3 -0.4 -0.2 tf 12 tr 2 -0.0001

Contextual Info: Ordering number : EN8211A MCH3145/MCH3245 Bipolar Transistor http://onsemi.com – 50V, (–)2A, Low VCE(sat), (PNP)NPN Single MCPH3 Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • • • • • Large current capacity Adoption of MBIT processes

BC850CW

Contextual Info: BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS POWER 30/45/65 Volts VOLTAGE 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Lead free in comply with EU RoHS 2002/95/EC directives.

SBP13

Abstract: SBP13009 SBP-13
Contextual Info: SBP13009 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 40ns@8.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 320mV@8.0A/1.6A) - Wide Reverse Bias S.O.A

Contextual Info: 97.07,. <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGUVSJT V gdq FJ<G6;<A: 64C45<?<GL v<?8 }Bbnueghiek V h>0 7<8?86GE<6 FGE8A:G; ]58GJ88A 6B<? 4A7 6BAG46GF^ V g@@ 6BAG46G :4C 4I4<?45?8 v<?8 }Bbn,ideihkff V /{ <AFH?4G<BA FLFG8@n s?4FF v 4I4<?45?8 V uAI<EBA@8AG4? 9E<8A7?L CEB7H6G ],Bx- 6B@C?<4AG^

sbw13009

Contextual Info: SBW13009 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 40ns@8.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 320mV@8.0A/1.6A) - Wide Reverse Bias S.O.A

SBP13

Abstract: SBP13009A SBP-13
Contextual Info: SemiWell Semiconductor SBP13009A High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 60ns@8.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 320mV@8.0A/1.6A) - Wide Reverse Bias S.O.A

SBP13009

Contextual Info: SBP13009 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 40ns@8.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 320mV@8.0A/1.6A) - Wide Reverse Bias S.O.A

FZT857

Abstract: FZT957 FZT958 DSA003675
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp

MJD122T4G

Abstract: TRANSISTOR MJD122
Contextual Info: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS

2N3904

Abstract: NPN 2n3904 2N2222 npn 2n2222 2N2222A 2SD1803 AIC1638 AIC1639 Si2302DS AN00-SR05EN
Contextual Info: AN00-SR05EN Optimized external driver for AIC1639 Stanley Chen Introduction AIC1639 is a member of AIC1638 PFM （ Pulse Frequency Modulation ） controller IC family, for step-up DC/DC converter featuring high efficiency and low ripple voltage, which is exactly the same as