V2 SMD TRANSISTOR Search Results

HS-22620RH

Abstract: S13N4 AL SMD transistor HS2262 5962F9751201V9A 5962F9751201VXC HS0-22620RH-Q HS9-22620RH-Q smd transistor v2 uncompensated operational amplifier
Contextual Info: HS-22620RH Data Sheet August 1999 Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier File Number 4349.1 Features • Electrically Screened to SMD # 5962-97512 • QML Qualified per MIL-PRF-38535 Requirements The HS-22620RH is a radiation hardened, dual bipolar

RS12-30M-LED

Abstract: International Power Devices IHCBB-75W
Contextual Info: AL8811EV1 User Guide General Description The MR16 LED Driver Standard Evaluation board shows how to use the new AL8811 as a Boost LED driver for an inexpensive PFC front end and the new AL8807A as a Buck LED driver for a cost effective MR16 LED Driver circuit from which high PFC ~0.9

transistor SMD n18

Abstract: smd transistor 4b level shifter . CMOS to TTL smd transistor n17 transistor SMD n17 5962D9569201VEA 5962D9569201VEC 5962D9569202VEA 5962D9569202VEC HS-0508RH
Contextual Info: HS-0508RH, HS-0509RH Data Sheet Radiation Hardened Single 8/Differential 4-Channel CMOS Analog Multiplexers These radiation hardened monolithic CMOS multiplexers each include an array of eight analog switches, a digital decode circuit for channel selection, a voltage reference for

Contextual Info: HS-2420RH Data Sheet December 2, 2013 Radiation Hardened Fast Sample and Hold The HS-2420RH is a radiation hardened monolithic circuit consisting of a high performance operational amplifier with its output in series with an ultra-low leakage analog switch

4N03L04

Abstract: iPP80n03S4L-04 4N03L03 4n03
Contextual Info: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow

4N03L15

Abstract: DIODE smd marking Ag diode smd marking T2 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2
Contextual Info: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • Automotive AEC Q101 qualified

1N4002 smd type

Abstract: 5962-95694 HS SMD GDIP1-T16 HS-0548RH HS-0549RH MKT .1K V2 smd transistor
Contextual Info: HS-0548RH, HS-0549RH Data Sheet Radiation Hardened Single 8/Differential 4 Channel CMOS Analog Multiplexers with Active Overvoltage Protection The HS-0548RH and HS-0549RH are radiation hardened analog multiplexers with Active Overvoltage Protection and guaranteed rON matching. Analog input levels may greatly

1N4002 smd type

Abstract: HS-509 1N4002 smd 5962-95694 GDIP1-T16 HS-0548RH HS-0549RH CDIP2-T16 MKT .1K
Contextual Info: HS-0548RH, HS-0549RH TM Data Sheet August 2001 Radiation Hardened Single 8/Differential 4 Channel CMOS Analog Multiplexers with Active Overvoltage Protection tle 8R S9R iadle ifn4 nOS ti- The HS-0548RH and HS-0549RH are radiation hardened analog multiplexers with Active Overvoltage Protection and

ANPS071E

Abstract: IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 4N03L15 smd d22 4n03
Contextual Info: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • MSL1 up to 260°C peak reflow

SMD Transistor Y14

Abstract: K18 capacitor SMD y14 5962F9751201VXC HS-22620RH HS9-22620RH-Q uncompensated operational amplifier HS2262 K18B smd transistor 813
Contextual Info: HS-22620RH S E M I C O N D U C T O R July 1997 Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier Features Description • Electrically Screened to DSCC SMD # 5962-97512 The HS-22620RH is a radiation hardened, dual bipolar operational amplifier that features very high input impedance

3pn1005

Abstract: IPP100N10S3-05 IPB100N10S3-05 IPI100N10S3-05 ANPS071E PG-TO263-3-2 DSV80
Contextual Info: IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 OptiMOS -T Power-Transistor Product Summary Features V DS 100 V R DS on ,max (SMD version) 4.8 mΩ ID 100 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified

3n1012

Abstract: IPB70N10S3-12 IPI70N10S3-12 IPP70N10S3-12 PG-TO263-3-2
Contextual Info: IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 11.3 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 70 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified

4N03L02

Contextual Info: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature

4N03L03

Abstract: 4n03l02 IPB80N03S4L-02 4n03L
Contextual Info: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature

5962R9566901VCA

Abstract: HS1-2420RH-Q HS-2420RH TRIM POT 10K
Contextual Info: HS-2420RH TM Data Sheet August 2000 File Number Radiation Hardened Fast Sample and Hold Features The HS-2420RH is a radiation hardened monolithic circuit consisting of a high performance operational amplifier with its output in series with an ultra-low leakage analog switch

AL8812

Contextual Info: AL8812EV1 User Guide General Description The MR16 LED Driver Module Evaluation board shows how to use the new AL8812 with integrated MOSFET in one package as a Boost LED driver for an inexpensive PFC front end and the new AL8807A as a Buck LED driver for a cost effective MR16 LED

operational amplifier discrete schematic

Abstract: pot 100K smd 5962R9566901VCC HS1B-2420RH-Q HS-2420RH MKT 0.1UF
Contextual Info: HS-2420RH Data Sheet February 2003 FN3554.3 Radiation Hardened Fast Sample and Hold Features The HS-2420RH is a radiation hardened monolithic circuit consisting of a high performance operational amplifier with its output in series with an ultra-low leakage analog switch

C3206

Abstract: H4 SMD IPB80N04S3-H4 IPI80N04S3-H4 IPP80N04S3-H4 PG-TO263-3-2 3n04h
Contextual Info: IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3-H4 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

3n0407

Abstract: 3N04 DIODE smd marking v1 ANPS071E IPB70N04S3-07 IPI70N04S3-07 IPP70N04S3-07 PG-TO263-3-2 Application Note ANPS071E 3N040
Contextual Info: IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 6.2 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

4N03L04

Abstract: IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 PG-TO263-3-2 4N03L03 4n03
Contextual Info: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

4N03L04

Abstract: IPI80N03S4L-04 4N03L03 AG SMD TRANSISTOR DIODE smd marking Ag ANPS071E IPB80N03S4L-03 IPP80N03S4L-04 PG-TO263-3-2
Contextual Info: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified

3N0406

Abstract: IPP80N04S3-06 IPB80N04S3-06 IPI80N04S3-06 ANPS071E PG-TO263-3-2
Contextual Info: IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 5.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

3N0404

Abstract: IPB80N04S3-04 ANPS071E IPI80N04S3-04 IPP80N04S3-04 PG-TO263-3-2 d80 DIODE
Contextual Info: IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.8 mΩ ID 80 A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

3PN0402

Abstract: IPB120N04S3-02 smd diode UM 08
Contextual Info: Preliminary Data Sheet IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.0 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified