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TRS12V65H
|
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 650 V, 12 A, DFN8×8 |
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TRS12E65H
|
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Toshiba Electronic Devices & Storage Corporation
|
SiC Schottky Barrier Diode (SBD), 650 V, 12 A, TO-220-2L |
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SLC7530D-101MLC
|
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Coilcraft Inc
|
General Purpose Inductor, 0.1uH, 20%, 2 Element, Ferrite-Core, SMD, 567-30M, CHIP,7567-30M, ROHS COMPLIANT |
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SLC7530S-640MLB
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Coilcraft Inc
|
General Purpose Inductor, 0.064uH, 20%, 1 Element, Ferrite-Core, SMD, 567-30M, CHIP,7567-30M, ROHS COMPLIANT |
|
|
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SLC7530D-101MLB
|
|
Coilcraft Inc
|
General Purpose Inductor, 0.1uH, 20%, 2 Element, Ferrite-Core, SMD, 567-30M, CHIP,7567-30M, ROHS COMPLIANT |
|
|
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SLC7530D-640MLC
|
|
Coilcraft Inc
|
General Purpose Inductor, 0.064uH, 20%, 2 Element, Ferrite-Core, SMD, 567-30M, CHIP,7567-30M, ROHS COMPLIANT |
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