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    Infineon Technologies AG CY7C2565XV18-633BZXC

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    Rochester Electronics CY7C2565XV18-633BZXC 408 1
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    Flip Electronics CY7C2565XV18-633BZXC 936
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    Infineon Technologies AG CY7C1563XV18-633BZXC

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    Flip Electronics CY7C1563XV18-633BZXC 544
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    Infineon Technologies AG CY7C2563XV18-633BZXC

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    Rochester Electronics CY7C2563XV18-633BZXC 474 1
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    Flip Electronics CY7C2563XV18-633BZXC 509
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    Motorola Semiconductor Products MV1863D

    SILICON ABRUPT TUNING VARACTOR DIODE
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    Bristol Electronics MV1863D 1 1
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    Cypress Semiconductor CY7C1263XV18-633BZXC

    QDR II+ 36Mbit 2M x 18 1.7V - 1.9V Parallel 633MHz 450ps 165-BGA Tray
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    Rochester Electronics CY7C1263XV18-633BZXC 75 1
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    V1863 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: n s i ELECTRONICS INC 35E D E3 5b5b4bb 00003T1 3 E M S I T'O 7-/9 HYPERABRUPT - ABRUPT UHF-MICROWAVE TUNING DIODES electronics /n c . . . designed for electronic tuning and control applications in the UHF and lower microwave frequency ranges. S E R IE S M V205


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    00003t110/ia28vdcv1962+6v1863v1864v1665v1866v1969v1870 PDF

    EP1024

    Abstract: GC112 EP1014 EP1019 ha17 series LP1014 LP1016 LP1017 LP1018 LP1019
    Contextual Info: HYPERABRUPT - ABRUPT UHF-MICROWAVE TUNING DIODES electronics i n c designed for electronic tuning and control applications in the UHF and lower microwave frequency ranges. * S E R IE S M V205 M V 20S LP1 01 4-1 0 3 8 C P I O f 4 *1 0 3 8 LOW INDUCTANCE PLANAR CONSTRUCTION


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    mv205mv206ept0i4-103810/ia+1428vdcc3/c25w00dsideg043st2ep1024gc112ep1014ep1019ha17 serieslp1014lp1016lp1017lp1018lp1019 PDF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    111iimz5558z5555z5556+11mz5557powec rm 1110rm 1100 powecmpc1000transistors jx 6822 ainverter welder 4 schematicsaa 14ztransistor si 6822stg 8810pl 15z diodegermanium transistor PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175 PDF

    HA1111

    Abstract: EP1014 HA1102 songle LP1014 LP1016 LP1017 LP1018 MV205 MV206
    Contextual Info: U S I ELECTRONICS INC 35E D E3 SbShMbb 00003^1 3 E MSI T 'D 7 -/9 HYPERÄBRUPT - ABRUPT UHF-MICROWAVE TUNING DIODES electrónica . . . designed for electronic tuning and control applications in the UHF and lower microwave frequency ranges. • • SERIES M V 205


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    mv205mv20610jma28vdc+8ha1111ep1014ha1102songlelp1014lp1016lp1017lp1018 PDF

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    z1000mz4614mz46271n4099+13m4l3052m4l30561n5158varactor 36zgermaniumhalbleiter index transistorhalbleiter buch2n53472n3054working of reactance modulatorje2955germanium transistor2n3902 PDF

    cj-cc

    Abstract: 10n-X2 MV1858D MV1860D MV1862D MV1863D MV1864D MV1865D MV1866D MV1868D
    Contextual Info: MVl 858D ,MV1 860D, MV1862D, silicon V1863D,MV1864D, MVl 865D, MVl 866D, MVl 868D, MV1870D vvc -» IS IL IC O N E P IC A P V O L T A G E - V A R IA B L E C A P A C IT A N C E D IO D E S D IO D E S 1 to 15 pF 60 V O L T S . . . designed fo r electronic tuning and control applications in the UH F


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    mv1858dmv1860dmv1862dmv1863d+7mv1864dmv1865dmv1866dmv1868dmv1870dcj-cc10n-x2 PDF

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


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    4l30524l3056wiring diagram audio amplifier ic 6283germanium+8transistor shortform datasheet & cross referenceshalbleiter index transistor2n5160 motorolatransistor itt 29071n51592n 5574inverter welder 4 schematicdiagrams de ic lg 8838 PDF

    d1384

    Abstract: d1888 2sd1944 2SC2200 2SC1730 2SD82G 2SD668A 1890A 2SC380-O 2sc2139 toshiba
    Contextual Info: - S € tt T y p e Ko. € Manuf. 0 4 <-• V-1863 — ' Bm 1864 a a 1865 a a 1866 a a H » SANYO 2SC 1857 2SC 1 859 2SC 2SC 2SC 2SC 2SC 1867 ^ B S 2SC 136 7A S S 2SC 1869 a b a 2SC 1870._ B 2SC 1871 b 2SC 1868 * 2SC 1871A 2SC 1875 „ 2SC 1876 2SC 1880 ,


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    2sc18572sc18592sd5452sd773+132sd4682sc22302sc22362sc2200d1384d18882sd19442sc17302sd82g2sd668a1890a2sc380-o2sc2139 toshiba PDF