V09C Search Results

V09C

Abstract: V09G V09E v09 diode Hitachi DSA00515
Contextual Info: FAST RECOVERY DIODE V09 OUTLINE DRAWING V09C 200V V09E (400V) V09G (600V) Cathode band 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Symbol(Blue) • For high speed switching.

V09G

Contextual Info: FAST RECOVERY DIODE V09 OUTLINE DRAWING V09C 200V V09E (400V) V09G (600V) Cathode band 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Symbol(Blue) • For high speed switching.

V09G

Abstract: V09C v09 diode V09E
Contextual Info: FAST RECOVERY DIODE V09 OUTLINE DRAWING Color of cathode band Type V09C 200V V09E (400V) V09G (600V) φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) • 高速スイッチング用 • 拡散接合形ガラスモールド構造 Cathode band 29MIN. (1.14) 長 29MIN.

Contextual Info: FAST RECOVERY DIODE V09 FEATURES OUTLINE DRAWING • For high speed switching. • Diffused-junction. Glass passivated and encapsulated. ABSOLUTE MAXIMUM RATINGS V09C V09E V09G Repetitive Peak Reverse Voltage V RRM V 200 400 600 Non-Repetitive Peak Reverse Voltage

V09G

Abstract: V09C V09E diode v09 hitachi
Contextual Info: FAST RECOVERY DIODE V09 OUTLINE DRAWING V09C 200V V09E (400V) V09G (600V) Cathode band 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Symbol(Blue) • For high speed switching.

Solitron J775-2

Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188

km6161000blti

Abstract: FTC 960 6161000BL
Contextual Info: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • • The KM6161000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature

TT 2246

Abstract: V09C hitachi V06 V09E V09G
Contextual Info: TYPE I VQ9 •FEATURES UP TO 600V 1.3A RMS HIGH SPEED T YPE DIODE OUTLINE DRAWING • Developed for switching applications, this device has a reverse recovery time of 0.5/isec. Optimum for use in high-frequency circuits such as televi­ 0. 8 : sion horizontal deflection circuits.

V06C HITACHI

Abstract: DHM3K20 DHM3HC80 hitachi rectifier U05B DHM3G80 DFM1SA DHM3FG80 DAM3A HITACHI DFG2A hitachi V03C
Contextual Info: Diodes Axial • it m. Lead Type v-vwmm* mm#*- m¿2&&r¿3>cy7 vyz^mm^ l«-?íf5o t t x - yy yya iFeatures ►Hitachi diodes are available for any kind of applications. The versatile lineup includes general use rectifier diodes, surge-absorbing devices, high-voltage

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 um CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage

V09C

Abstract: V09G 1S2244
Contextual Info: FAST RECOVERY DIODE SB Unit in mm ir>ch •tt ft •# á x > í • IM M Ÿ 7 X Î- OUTLINE DRAWING X iz KUtift to o CO y IS«; 00.8 (0.03) Direction of polarity IFEATURES >F o r high speed switching. * Diffused-junction. G lass encapsulated. passivated and

Contextual Info: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min

ZSH5MAZ27

Abstract: ZSH5MA27 ZSH5MT V06C HITACHI ZSH5MT27 IN 47 serise zener diodes data ZSA5A27 hitachi rectifier U05B DSA3A1 V06C
Contextual Info: Status List Date:Nov. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant Included RoHS exemption substance N:Non compliant Production Status M:Mass production O:Order production W:Working sample A:Abolition •General-Use Rectifier Diodes

ZSH5MAZ27

Abstract: ZSH5MA27 U05B ZSH5MC27 ZSH5MA27A DSM3MA1 V06C H114B DHM3G80 DSA3A1
Contextual Info: ステータスリスト 2010.11 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 ◎：適合 ○：適合（但し適用除外項目物質を含有） 【ステータス】 ◎：量産品 ○：受注生産品 ▲：未対応